260
12 Novel Nitride LED Technology
Fig. 12.6 a Pyramidal nanostructures of GaN formed by using pure N 2 as carrier gas during growth
process; As-grown GaN nanorods with b the H 2 /N 2 ratio being 1/2 c the H 2 /N 2 ratio being 2/1
In addition to these traditional methods, Chul-Ho Lee et al. reported a new method
for epitaxially growing GaN/ZnO coaxial LEDs directly on graphene films and
obtained a blue LED with good performance as shown in Fig. 12.7 in 2011 [10].
Since graphene films can be transferred to any flexible substrate, this approach opens
up new directions for the preparation of inorganic flexible optoelectronic devices.
In short, the “top-down” process is relatively simple and can be implemented
directly based on planar structure LEDs, which can effectively release the stress in the
planar structure LED and increase the light extraction. However, the etching process
Fig. 12.7 Schematic illustration of preparation process of graphene–based flexible GaN/ZnO
coaxial nanorod LED
12 Novel Nitride LED Technology
Fig. 12.6 a Pyramidal nanostructures of GaN formed by using pure N 2 as carrier gas during growth
process; As-grown GaN nanorods with b the H 2 /N 2 ratio being 1/2 c the H 2 /N 2 ratio being 2/1
In addition to these traditional methods, Chul-Ho Lee et al. reported a new method
for epitaxially growing GaN/ZnO coaxial LEDs directly on graphene films and
obtained a blue LED with good performance as shown in Fig. 12.7 in 2011 [10].
Since graphene films can be transferred to any flexible substrate, this approach opens
up new directions for the preparation of inorganic flexible optoelectronic devices.
In short, the “top-down” process is relatively simple and can be implemented
directly based on planar structure LEDs, which can effectively release the stress in the
planar structure LED and increase the light extraction. However, the etching process
Fig. 12.7 Schematic illustration of preparation process of graphene–based flexible GaN/ZnO
coaxial nanorod LED