182
8 III-Nitride LED Chip Fabrication Techniques
2. J.S. Foresi, T.D. Moustakas, Metal contacts to gallium nitride. Appl. Phys. Lett. 62(22), 2859–
2861 (1993)
3. B.P. Luther, S.E. Mohney, T.N. Jackson, Ti and TaN contacts to n-type GaN. Semicond. Sci.
Technol. 13(11), 1322–1327 (1998)
4. M.E. Lin, Z. Ma, F.Y. Huang, Low resistance ohmic contacts on wide band-gap GaN. Appl.
Phys. Lett. 64(8), 1003–1005 (1994)
5. L.F. Lester, J.M. Brown, J.C. Ramer, Nonalloyed Ti/Al ohmic contacts to n-type GaN using
high-temperature premetallization anneal. Appl. Phys. Lett. 69(18), 2737–2739 (1996)
6. B.P. Luther, S.E. Mohney, T.N. Jackson, Investigation of the mechanism for ohmic contact
formation in Al and Ti/Al contacts to n-type GaN. Appl. Phys. Lett. 70(1), 57–59 (1997).
7. S. Ruvimov, Z.L. Weber, J. Washburn, Microstructure of Ti/Al and Ti/Al/Ni/Au ohmic contacts
for n-GaN. Appl. Phys. Lett. 69(11), 1556–1558 (1996)
8. Z. Fan, S. Mohammad, W. Kim, Very low resistance multilayer ohmic contact to n-GaN. Appl.
Phys. Lett. 68(12), 1672–1674 (1996)
9. A. Motayed, K. Jones, M.A. Derenge, Electrical, microstructural, and thermal stability
characteristics of Ta/Ti/Ni/Au contacts to n-GaN. J. Appl. Phys. 95(3), 1516–1524 (2004)
10. J.O. Song, S.H. Kim, J. Kwak, Formation of v-based ohmic contacts to n-GaN. Appl. Phys.
Lett. 83(6), 1154–1156 (2003).
11. J.S. Jang, I.S. Chang, H.K. Kim et al., Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN.
Appl. Phys. Lett. 74(1), 70–72 (1999)
12. H. Cho, T. Hossain, J. Bae et al., Characterization of Pd/Ni/Au ohmic contacts on p-GaN. Solid
State Electron. 49(5), 774–778 (2005)
13. J.O. Song, D.S. Leem, J.S. Kwak et al., High-quality nonalloyed rhodium-based ohmic contacts
to p-type GaN. Appl. Phys. Lett. 83(12), 2372–2374 (2003)
14. J.K. Ho, C.S. Jong, C.C. Chiu et al., Low resistance ohmic contacts to p-GaN achieved by the
oxidation of Ni/Au films. J. Appl. Phys. 86(8), 4491–4493 (1999)
15. H.W. Jang, S.Y. Kim, J.L. Lee, Mechanism for Ohmic contact formation of oxidized Ni/Au on
p-type GaN. J. Appl. Phys. 94(3), 1–5 (2003)
16. S. Nakamura, S. Pearton, G. Fasol, The Blue Laser Diode: The Complete Story, 2nd edn.
(Springer, Berlin, 2000)
17. S. Xue, et al., Measurement of specific contact resistivity of ohmic contact on p-GaN. J.
Semicond. 26(5) (2005)
18. H. Ishikawa et al., Effects of surface treatments and metal work functions on electrical properties
at p-GaN/metal interfaces. J Appl Phys 81(3), 1315 (1997)
19. D. Wu, B. Yan, Principle, Measurement and Processing of Ohmic Contacts on MetalSemiconductor Interface (Shanghai Jiaotong University Press, Shanghai, 1989). (in Chinese)
20. G. Lewis Brian, C Paine David, Applications and processing of transparent conducting oxides.
MRS Bull. (2000)
21. Z. Wu, Z. Chen, X. Du, et al., Transparent, conductive carbon nanotube films. Science 305, 27
(2004)
22. H.Y. Liu, V. Avrutin, N. Izyumskaya et al., Transparent conducting oxides for electrode applications in light emitting and absorbing devices. Superlattices Microstruct. 48(5), 458–484
(2010)
23. J.H. Lim, E.J. Yang, D.K. Hwang et al., Highly transparent and lowresistance gallium-doped
indium oxide contact to p-type GaN. Appl. Phys. Lett. 87, 4 (2005)
24. C.S. Chang, S.J. Chang, Y.K. Su, et al., High brightness InGaN/GaN LEDs with indium-tinoxide as p-electrode. Phys. Stat. Sol. 7, 2227 (2003)
25. K. Nakahara et al., Jpn. J. Appl. Phys. 43(2A), 180–182 (2004)
26. Li. Jinli, D. Hong, L. Caikun, Structure and optoelectronic properties of AZO transparent
conductive film. Electron. Components Mater. 26, 1 (2007). (in Chinese)
27. P.P. Edwards, A. Porch, M.O. Jones, et al., Basic materials physics of transparent conducting
oxides. Dalton Trans., 2995–3002 (2004)
28. M.R. Graham, C.J. Adkins, H. Behar, R. Rosenbaum. J. Phy. Condens. Matter 10, 809 (1998)
8 III-Nitride LED Chip Fabrication Techniques
2. J.S. Foresi, T.D. Moustakas, Metal contacts to gallium nitride. Appl. Phys. Lett. 62(22), 2859–
2861 (1993)
3. B.P. Luther, S.E. Mohney, T.N. Jackson, Ti and TaN contacts to n-type GaN. Semicond. Sci.
Technol. 13(11), 1322–1327 (1998)
4. M.E. Lin, Z. Ma, F.Y. Huang, Low resistance ohmic contacts on wide band-gap GaN. Appl.
Phys. Lett. 64(8), 1003–1005 (1994)
5. L.F. Lester, J.M. Brown, J.C. Ramer, Nonalloyed Ti/Al ohmic contacts to n-type GaN using
high-temperature premetallization anneal. Appl. Phys. Lett. 69(18), 2737–2739 (1996)
6. B.P. Luther, S.E. Mohney, T.N. Jackson, Investigation of the mechanism for ohmic contact
formation in Al and Ti/Al contacts to n-type GaN. Appl. Phys. Lett. 70(1), 57–59 (1997).
7. S. Ruvimov, Z.L. Weber, J. Washburn, Microstructure of Ti/Al and Ti/Al/Ni/Au ohmic contacts
for n-GaN. Appl. Phys. Lett. 69(11), 1556–1558 (1996)
8. Z. Fan, S. Mohammad, W. Kim, Very low resistance multilayer ohmic contact to n-GaN. Appl.
Phys. Lett. 68(12), 1672–1674 (1996)
9. A. Motayed, K. Jones, M.A. Derenge, Electrical, microstructural, and thermal stability
characteristics of Ta/Ti/Ni/Au contacts to n-GaN. J. Appl. Phys. 95(3), 1516–1524 (2004)
10. J.O. Song, S.H. Kim, J. Kwak, Formation of v-based ohmic contacts to n-GaN. Appl. Phys.
Lett. 83(6), 1154–1156 (2003).
11. J.S. Jang, I.S. Chang, H.K. Kim et al., Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN.
Appl. Phys. Lett. 74(1), 70–72 (1999)
12. H. Cho, T. Hossain, J. Bae et al., Characterization of Pd/Ni/Au ohmic contacts on p-GaN. Solid
State Electron. 49(5), 774–778 (2005)
13. J.O. Song, D.S. Leem, J.S. Kwak et al., High-quality nonalloyed rhodium-based ohmic contacts
to p-type GaN. Appl. Phys. Lett. 83(12), 2372–2374 (2003)
14. J.K. Ho, C.S. Jong, C.C. Chiu et al., Low resistance ohmic contacts to p-GaN achieved by the
oxidation of Ni/Au films. J. Appl. Phys. 86(8), 4491–4493 (1999)
15. H.W. Jang, S.Y. Kim, J.L. Lee, Mechanism for Ohmic contact formation of oxidized Ni/Au on
p-type GaN. J. Appl. Phys. 94(3), 1–5 (2003)
16. S. Nakamura, S. Pearton, G. Fasol, The Blue Laser Diode: The Complete Story, 2nd edn.
(Springer, Berlin, 2000)
17. S. Xue, et al., Measurement of specific contact resistivity of ohmic contact on p-GaN. J.
Semicond. 26(5) (2005)
18. H. Ishikawa et al., Effects of surface treatments and metal work functions on electrical properties
at p-GaN/metal interfaces. J Appl Phys 81(3), 1315 (1997)
19. D. Wu, B. Yan, Principle, Measurement and Processing of Ohmic Contacts on MetalSemiconductor Interface (Shanghai Jiaotong University Press, Shanghai, 1989). (in Chinese)
20. G. Lewis Brian, C Paine David, Applications and processing of transparent conducting oxides.
MRS Bull. (2000)
21. Z. Wu, Z. Chen, X. Du, et al., Transparent, conductive carbon nanotube films. Science 305, 27
(2004)
22. H.Y. Liu, V. Avrutin, N. Izyumskaya et al., Transparent conducting oxides for electrode applications in light emitting and absorbing devices. Superlattices Microstruct. 48(5), 458–484
(2010)
23. J.H. Lim, E.J. Yang, D.K. Hwang et al., Highly transparent and lowresistance gallium-doped
indium oxide contact to p-type GaN. Appl. Phys. Lett. 87, 4 (2005)
24. C.S. Chang, S.J. Chang, Y.K. Su, et al., High brightness InGaN/GaN LEDs with indium-tinoxide as p-electrode. Phys. Stat. Sol. 7, 2227 (2003)
25. K. Nakahara et al., Jpn. J. Appl. Phys. 43(2A), 180–182 (2004)
26. Li. Jinli, D. Hong, L. Caikun, Structure and optoelectronic properties of AZO transparent
conductive film. Electron. Components Mater. 26, 1 (2007). (in Chinese)
27. P.P. Edwards, A. Porch, M.O. Jones, et al., Basic materials physics of transparent conducting
oxides. Dalton Trans., 2995–3002 (2004)
28. M.R. Graham, C.J. Adkins, H. Behar, R. Rosenbaum. J. Phy. Condens. Matter 10, 809 (1998)