8.7 Vertical Structure LEDs
181
Fig. 8.10. a, b GaN epitaxial sidewalls after metal interconnection, c electron beam evaporation
model, d metal evaporation angle.
evaporation is perpendicular to the surface of the GaN epitaxial wafer. As shown in
Fig. 8.10d, the red arrow represents the metal source, so the thickness of the sidewall
metal layer is related to the slope of the micro-pixel sidewall. In theory, the steeper
the sidewall, the thinner the metal layer on the sidewall and the lower the reliability
of device interconnection are. The overall effect of the metal interconnect electrode
is shown in Fig. 8.10b. The reliability of the metal interconnect is determined by the
way the metal coating is applied and the slope of the micro-grain epitaxial sidewall.
References
1. T. Margalith, O. Buchinsky, D.A. Cohen et al., Indium tin oxide contacts to gallium nitride
optoelectronic devices. Appl. Phys. Lett. 74(26), 3930–3932 (1999)
181
Fig. 8.10. a, b GaN epitaxial sidewalls after metal interconnection, c electron beam evaporation
model, d metal evaporation angle.
evaporation is perpendicular to the surface of the GaN epitaxial wafer. As shown in
Fig. 8.10d, the red arrow represents the metal source, so the thickness of the sidewall
metal layer is related to the slope of the micro-pixel sidewall. In theory, the steeper
the sidewall, the thinner the metal layer on the sidewall and the lower the reliability
of device interconnection are. The overall effect of the metal interconnect electrode
is shown in Fig. 8.10b. The reliability of the metal interconnect is determined by the
way the metal coating is applied and the slope of the micro-grain epitaxial sidewall.
References
1. T. Margalith, O. Buchinsky, D.A. Cohen et al., Indium tin oxide contacts to gallium nitride
optoelectronic devices. Appl. Phys. Lett. 74(26), 3930–3932 (1999)