References
147
References
1. J. Ho, C. Jong, C. Chien et al., Low-resistance ohmic contacts to p-type GaN. Appl. Phys. Lett.
74(9), 1275 (1999)
2. J. Ha, J. Jang, M. Joo et al., Investigation of optimized ohmic contact of direct ITO layer with
synchrotron radiation analysis. Phys. Stat. Sol. (c), 3(6), 1828–1831 (2006)
3. S. Chang, C. Chang, Y. Su et al., Highly reliable nitride-based LEDs with SPS + ITO upper
contacts. IEEE J. Quant. Electron. 39(11) (2003)
4. O. Shchekin, J. Epler, T. Trottier et al., High performance thin-film flip-chip InGaN-GaN
light-emitting diodes. Appl. Phys. Lett. 89, 071109 (2006)
5. K. Tamura, K. Nakahara, M. Sakai et al., InGaN-based light-emitting diodes fabricated with
transparent Ga-doped ZnO as ohmic p-contact. Phys. Stat. Sol. (a) 201(12), 2704–2707 (2004)
6. http://www.cree.com/News-and-Events/Cree-News/Press-Releases/2014/March/300LPWLED-barrier
7. P. Vennegues, B. Beaumont, V. Bousquet et al, Reduction mechanisms for defect densities in
GaN using one or two step epitaxial lateral overgrowth method. J. Appl. Phys. 87, 4175 (2000)
8. J. Jasinskil, Z. Liliental-Weber, Extended defects and polarity of hydride vapor phase epitaxy
GaN. J. Electron. Mater. 31(5), 230–235 (2002)
9. V. Fiorentini, F. Bernardini, O. Ambacher, Evidence for nonlinear macroscopic polarization in
III–V nitride alloy heterostructures. Appl. Phys. Lett. 80, 1204 (2002)
10. F. Bechstedt, U. Grossner, J. Furthmuller, Dynamics and polarization of group-III nitride
lattices: A first-principles study. Phys. Rev. B 62, 8003 (2000)
11. F. Bernardin, V. Fiorentini, Spontaneous versus piezoelectric polarization in III-V nitrides:
conceptual aspects and practical consequences. Phys. Stat. Sol. (b) 216, 391 (1999)
12. H. Li, P. Li, J. Kang et al., Quantum efficiency enhancement of 530 nm InGaN green light
emitting diodes with shallow quantum well. Appl. Phys. Express 6(5), 052102 (2013)
13. C. Chen, Y. Su, S. Chang et al., High brightness green light emitting diodes with charge
asymmetric resonance tunneling structure. IEEE Electron Dev. Lett. 23(3), 130–132 (2002)
14. T. Wen, S. Chang, L. Wu et al., InGaN/GaN tunnel-injection blue light-emitting diodes. IEEE
Trans. Electron Dev. 49(6), 1093–1095 (2002)
15. X. Cao, E. Stokes, P. Sandvik et al., Diffusion and tunneling currents in GaN/InGaN multiple
quantum well light-emitting diodes. IEEE Electron Dev. Lett. 23(9), 535–537 (2002)
16. H. Hsu, Y. Su, S. Huang et al., Enhanced performance of nitride-based blue LED with step-stage
MQW structure. IEEE Photon. Technol. Lett. 23(5), 287–289 (2011)
17. S. Huang, Y. Su, C. Tseng et al., Improvement of light intensity for nitride-based multi-quantum
well light emitting diodes by stepwise-stage electron emitting layer. Appl. Phys. Exp. 3(12),
122106 (2010)
18. E. Park, D. Kang, I. Ferguson et al., The effect of silicon doping in the selected barrier on the
electroluminescence of InGaN/GaN multiquantum well light emitting diode. Appl. Phys. Lett.
90, 031102 (2007)
19. N. Zhang, Z. Liu, T. Wei et al., Effect of the graded electron blocking layer on the emission
properties of GaN-based green light-emitting diodes. Appl. Phys. Lett. 100, 053504 (2012)
20. Z. Liu, J. Ma, X. Yi et al., p-InGaN/AlGaN electron blocking layer for InGaN/GaN blue
light-emitting diodes. Appl. Phys. Lett. 101, 261106 (2012)
21. Z. Si, T. Wei, J. Ma et al., Modification of carrier distribution in dual-wavelength light-emitting
diodes by specified mg doped barrier. ECS Solid State Lett. 2(10), R37–R39 (2013)
22. J. Kang, H. Li, Z. Li et al., Enhancing the performance of green GaN-based light-emitting
diodes with graded superlattice AlGaN/GaN inserting layer. Appl. Phys. Lett. 103, 102104
(2013)
23. L. Meng, W. Guohong, L. Hongjian et al., Low threading dislocation density in GaN films
grown on patterned sapphire substrates. J. Semicond. 33(11), 113002 (2012)
24. Y. Zhang et al., Enhancement in the light output power of GaN-based light-emitting diodes
with nanotextured indium tin oxide layer using self-assembled cesium chloride nanospheres.
Jpn. J. Appl. Phys. 51(2), 1 (2012)
147
References
1. J. Ho, C. Jong, C. Chien et al., Low-resistance ohmic contacts to p-type GaN. Appl. Phys. Lett.
74(9), 1275 (1999)
2. J. Ha, J. Jang, M. Joo et al., Investigation of optimized ohmic contact of direct ITO layer with
synchrotron radiation analysis. Phys. Stat. Sol. (c), 3(6), 1828–1831 (2006)
3. S. Chang, C. Chang, Y. Su et al., Highly reliable nitride-based LEDs with SPS + ITO upper
contacts. IEEE J. Quant. Electron. 39(11) (2003)
4. O. Shchekin, J. Epler, T. Trottier et al., High performance thin-film flip-chip InGaN-GaN
light-emitting diodes. Appl. Phys. Lett. 89, 071109 (2006)
5. K. Tamura, K. Nakahara, M. Sakai et al., InGaN-based light-emitting diodes fabricated with
transparent Ga-doped ZnO as ohmic p-contact. Phys. Stat. Sol. (a) 201(12), 2704–2707 (2004)
6. http://www.cree.com/News-and-Events/Cree-News/Press-Releases/2014/March/300LPWLED-barrier
7. P. Vennegues, B. Beaumont, V. Bousquet et al, Reduction mechanisms for defect densities in
GaN using one or two step epitaxial lateral overgrowth method. J. Appl. Phys. 87, 4175 (2000)
8. J. Jasinskil, Z. Liliental-Weber, Extended defects and polarity of hydride vapor phase epitaxy
GaN. J. Electron. Mater. 31(5), 230–235 (2002)
9. V. Fiorentini, F. Bernardini, O. Ambacher, Evidence for nonlinear macroscopic polarization in
III–V nitride alloy heterostructures. Appl. Phys. Lett. 80, 1204 (2002)
10. F. Bechstedt, U. Grossner, J. Furthmuller, Dynamics and polarization of group-III nitride
lattices: A first-principles study. Phys. Rev. B 62, 8003 (2000)
11. F. Bernardin, V. Fiorentini, Spontaneous versus piezoelectric polarization in III-V nitrides:
conceptual aspects and practical consequences. Phys. Stat. Sol. (b) 216, 391 (1999)
12. H. Li, P. Li, J. Kang et al., Quantum efficiency enhancement of 530 nm InGaN green light
emitting diodes with shallow quantum well. Appl. Phys. Express 6(5), 052102 (2013)
13. C. Chen, Y. Su, S. Chang et al., High brightness green light emitting diodes with charge
asymmetric resonance tunneling structure. IEEE Electron Dev. Lett. 23(3), 130–132 (2002)
14. T. Wen, S. Chang, L. Wu et al., InGaN/GaN tunnel-injection blue light-emitting diodes. IEEE
Trans. Electron Dev. 49(6), 1093–1095 (2002)
15. X. Cao, E. Stokes, P. Sandvik et al., Diffusion and tunneling currents in GaN/InGaN multiple
quantum well light-emitting diodes. IEEE Electron Dev. Lett. 23(9), 535–537 (2002)
16. H. Hsu, Y. Su, S. Huang et al., Enhanced performance of nitride-based blue LED with step-stage
MQW structure. IEEE Photon. Technol. Lett. 23(5), 287–289 (2011)
17. S. Huang, Y. Su, C. Tseng et al., Improvement of light intensity for nitride-based multi-quantum
well light emitting diodes by stepwise-stage electron emitting layer. Appl. Phys. Exp. 3(12),
122106 (2010)
18. E. Park, D. Kang, I. Ferguson et al., The effect of silicon doping in the selected barrier on the
electroluminescence of InGaN/GaN multiquantum well light emitting diode. Appl. Phys. Lett.
90, 031102 (2007)
19. N. Zhang, Z. Liu, T. Wei et al., Effect of the graded electron blocking layer on the emission
properties of GaN-based green light-emitting diodes. Appl. Phys. Lett. 100, 053504 (2012)
20. Z. Liu, J. Ma, X. Yi et al., p-InGaN/AlGaN electron blocking layer for InGaN/GaN blue
light-emitting diodes. Appl. Phys. Lett. 101, 261106 (2012)
21. Z. Si, T. Wei, J. Ma et al., Modification of carrier distribution in dual-wavelength light-emitting
diodes by specified mg doped barrier. ECS Solid State Lett. 2(10), R37–R39 (2013)
22. J. Kang, H. Li, Z. Li et al., Enhancing the performance of green GaN-based light-emitting
diodes with graded superlattice AlGaN/GaN inserting layer. Appl. Phys. Lett. 103, 102104
(2013)
23. L. Meng, W. Guohong, L. Hongjian et al., Low threading dislocation density in GaN films
grown on patterned sapphire substrates. J. Semicond. 33(11), 113002 (2012)
24. Y. Zhang et al., Enhancement in the light output power of GaN-based light-emitting diodes
with nanotextured indium tin oxide layer using self-assembled cesium chloride nanospheres.
Jpn. J. Appl. Phys. 51(2), 1 (2012)