148
7 III-Nitride LED Quantum Efficiency Improvement Technology
25. Y. Houng, M. Tan, B. Liang et al., InGaAs/GaAs vertical cavitv surface emitting lasers grown
by gas source molecular beam epitaxy. J. Cryst. Growth 136(1–4), 216–220 (1994)
26. H. Shen Tuwei, H.Y. Fei et al., Study on light extraction efficiency of GaN-based LED chips
(in Chinese). Optoelectron. Laser 16(4), 385–389 (2005)
27. L. Yongchang et al., Principles of Optical Thin Films (in Chinese), National Defense Industry
Press (1990)
28. W. Shockley, The theory of pn junctions in semiconductors and pn junctio n transistors. Bell
Syst. Tech. J. 28, 435 (1949)
29. X. Guo, E.F. Schubert et al., Current crowding and optical saturation effects in GaInN/GaN
light emitting diodes grown on insulating substrates. Appl. Phys. Lett. 78(21), 3337 (2001)
30. Y. Shen, Mueller, S. Watanabe et al., Auger recombination in InGaN measured by photoluminescence. Appl. Phys. Lett. 91 (14), 141101 (2007)
31. X. Ni, Q. Fan, R. Shimada et al., Reduction of efficiency droop in InGaN light emitting diodes
by coupled quantum wells. Appl. Phys. Lett. 93(17), 171113 (2008)
32. Y. Li, Y. Huang, Y. Lai et al., Investigation of efficiency droop behaviors of InGaN/GaN
multiple-quantum-well LEDs with various well thicknesses. IEEE J. Sel. Top. Quantum
Electron. 15(4), 1128–1131 (2009)
33. B. Monemara, B. Sernelius, Defect related issues in the “current roll-off” in InGaN based light
emitting diodes. Appl. Phys. Lett. 91(18), 181103 (2007)
34. H. Ryu, J. Shim, Effect of current spreading on the efficiency droop of InGaN light-emitting
diodes. Opt. Exp. 19(4), 2886–2894 (2011)
35. A. David, M. Grundmann, Droop in InGaN light emitting diodes: a differential carrier lifetime
analysis. Appl. Phys. Lett. 96(10), 103504 (2010)
36. M.F. Schubert, S. Chhajed, J. Kim et al., Effect of dislocation density on efficiency droop in
GaInN/GaN light emitting diodes. Appl. Phys. Lett. 91, 231114 (2007)
37. J. Campbell, P. Lenahan, A. Krishnan et al., Identification of atomic scale defect structure
involved in the negative bias temperature instability in plasma-nitride devices. Appl. Phys.
Lett. 97, 133507 (2010)
38. M.F. Schubert, J. Xu, J. Kim et al., Polarization matched GaInN/AlGaInN multi-quantum-well
light emitting diodes with reduced efficiency droop. Appl. Phys. Lett. 93, 041102 (2008)
39. K. Delaney, P. Rinke, C. Van de Walle, Auger recombination rates in nitrides from first
principles. Appl. Phys. Lett. 94, 91109 (2009)
40. M. Meneghini, N. Trivellin, M. Pavesi et al., Leakage current and reverse-bias luminescence
in InGaN-based light emitting diodes. Appl. Phys. Lett. 95(17), 173507 (2009)
41. N. Gardner, G. Muller, Y. Shen et al., Blue emitting InGaN-GaN double heterostructure light
emitting diodes reaching maximum quantum efficiency above 200A/cm 2 . Appl. Phys. Lett.
91(24), 243506 (2007)
42. D. Iida, K. Tamura, M. Iwaya et al., Compensation effect of Mg-doped a- and c-plane GaN
films grown by metalorganic vapor phase epitaxy. J. Cryst. Growth 312(21), 3131–3135 (2010)
43. J. Xie, X. Ni, Q. Fan et al., On the efficiency droop in InGaN multiple quantum well blue light
emitting diodes and its reduction with p-doped quantum well barriers. Appl. Phys. Lett. 93,
121107 (2008)
44. H. Li, J. Kang, P. Li et al., Enhanced performance of GaN based light emitting diodes with a
low temperature p-GaN hole injection layer. Appl. Phys. Lett. 102, 011105 (2013)
45. http://spectrum.IEEE.org/semiconductors/optoelectronics/the-leds-dark-secret
46. Q. Dai, Q. Shan, J. Cho, et al., On the symmetry of efficiency-versus-carrier-concentration
curves in GaInN/GaN light emitting diodes and relation to droop-causing mechanism. Appl.
Phys. Lett. 98(3), 033506 (2011)
47. M. Kim, M.F. Schubert, Q. Dai et al., Origin of efficiency droop in GaN-based light emitting
diodes. Appl. Phys. Lett. 91, 183507 (2007)
48. J. Cho, E.F. Schubert, J. Kim et al., Efficiency droop in light emitting diodes: Challenges and
countermeasures. Laser Photon. Rev. 7(3), 408–421 (2013)
49. G. Lin, D. Meyaard, J. Cho et al., Analytic model for the efficiency droop in semiconductors with
asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency.
Appl. Phys. Lett. 100(16), 161106 (2012)
7 III-Nitride LED Quantum Efficiency Improvement Technology
25. Y. Houng, M. Tan, B. Liang et al., InGaAs/GaAs vertical cavitv surface emitting lasers grown
by gas source molecular beam epitaxy. J. Cryst. Growth 136(1–4), 216–220 (1994)
26. H. Shen Tuwei, H.Y. Fei et al., Study on light extraction efficiency of GaN-based LED chips
(in Chinese). Optoelectron. Laser 16(4), 385–389 (2005)
27. L. Yongchang et al., Principles of Optical Thin Films (in Chinese), National Defense Industry
Press (1990)
28. W. Shockley, The theory of pn junctions in semiconductors and pn junctio n transistors. Bell
Syst. Tech. J. 28, 435 (1949)
29. X. Guo, E.F. Schubert et al., Current crowding and optical saturation effects in GaInN/GaN
light emitting diodes grown on insulating substrates. Appl. Phys. Lett. 78(21), 3337 (2001)
30. Y. Shen, Mueller, S. Watanabe et al., Auger recombination in InGaN measured by photoluminescence. Appl. Phys. Lett. 91 (14), 141101 (2007)
31. X. Ni, Q. Fan, R. Shimada et al., Reduction of efficiency droop in InGaN light emitting diodes
by coupled quantum wells. Appl. Phys. Lett. 93(17), 171113 (2008)
32. Y. Li, Y. Huang, Y. Lai et al., Investigation of efficiency droop behaviors of InGaN/GaN
multiple-quantum-well LEDs with various well thicknesses. IEEE J. Sel. Top. Quantum
Electron. 15(4), 1128–1131 (2009)
33. B. Monemara, B. Sernelius, Defect related issues in the “current roll-off” in InGaN based light
emitting diodes. Appl. Phys. Lett. 91(18), 181103 (2007)
34. H. Ryu, J. Shim, Effect of current spreading on the efficiency droop of InGaN light-emitting
diodes. Opt. Exp. 19(4), 2886–2894 (2011)
35. A. David, M. Grundmann, Droop in InGaN light emitting diodes: a differential carrier lifetime
analysis. Appl. Phys. Lett. 96(10), 103504 (2010)
36. M.F. Schubert, S. Chhajed, J. Kim et al., Effect of dislocation density on efficiency droop in
GaInN/GaN light emitting diodes. Appl. Phys. Lett. 91, 231114 (2007)
37. J. Campbell, P. Lenahan, A. Krishnan et al., Identification of atomic scale defect structure
involved in the negative bias temperature instability in plasma-nitride devices. Appl. Phys.
Lett. 97, 133507 (2010)
38. M.F. Schubert, J. Xu, J. Kim et al., Polarization matched GaInN/AlGaInN multi-quantum-well
light emitting diodes with reduced efficiency droop. Appl. Phys. Lett. 93, 041102 (2008)
39. K. Delaney, P. Rinke, C. Van de Walle, Auger recombination rates in nitrides from first
principles. Appl. Phys. Lett. 94, 91109 (2009)
40. M. Meneghini, N. Trivellin, M. Pavesi et al., Leakage current and reverse-bias luminescence
in InGaN-based light emitting diodes. Appl. Phys. Lett. 95(17), 173507 (2009)
41. N. Gardner, G. Muller, Y. Shen et al., Blue emitting InGaN-GaN double heterostructure light
emitting diodes reaching maximum quantum efficiency above 200A/cm 2 . Appl. Phys. Lett.
91(24), 243506 (2007)
42. D. Iida, K. Tamura, M. Iwaya et al., Compensation effect of Mg-doped a- and c-plane GaN
films grown by metalorganic vapor phase epitaxy. J. Cryst. Growth 312(21), 3131–3135 (2010)
43. J. Xie, X. Ni, Q. Fan et al., On the efficiency droop in InGaN multiple quantum well blue light
emitting diodes and its reduction with p-doped quantum well barriers. Appl. Phys. Lett. 93,
121107 (2008)
44. H. Li, J. Kang, P. Li et al., Enhanced performance of GaN based light emitting diodes with a
low temperature p-GaN hole injection layer. Appl. Phys. Lett. 102, 011105 (2013)
45. http://spectrum.IEEE.org/semiconductors/optoelectronics/the-leds-dark-secret
46. Q. Dai, Q. Shan, J. Cho, et al., On the symmetry of efficiency-versus-carrier-concentration
curves in GaInN/GaN light emitting diodes and relation to droop-causing mechanism. Appl.
Phys. Lett. 98(3), 033506 (2011)
47. M. Kim, M.F. Schubert, Q. Dai et al., Origin of efficiency droop in GaN-based light emitting
diodes. Appl. Phys. Lett. 91, 183507 (2007)
48. J. Cho, E.F. Schubert, J. Kim et al., Efficiency droop in light emitting diodes: Challenges and
countermeasures. Laser Photon. Rev. 7(3), 408–421 (2013)
49. G. Lin, D. Meyaard, J. Cho et al., Analytic model for the efficiency droop in semiconductors with
asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency.
Appl. Phys. Lett. 100(16), 161106 (2012)