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25. V. Adivarahan, J. Zhang, A. Chitnis et al., Sub-milliwatt power III-N light emitting diodes at
285 nm. Jpn. J. Appl. Phys. 41(Part 2, No. 4B), L435-L436 (2002)
26. A. Chitnis, J.P. Zhang, V. Adivarahan et al., 324 nm light emitting diodes with milliwatt powers.
Jpn. J. Appl. Phys. 41(Part 2, No. 4B), L450–L451 (2002)
27. W.H. Sun, J.P. Zhang, V. Adivarahan et al., AlGaN-based 280 nm light-emitting diodes with
continuous wave powers in excess of 1.5 mW. Appl. Phys. Lett. 85(4), 531–533 (2004)
28. R.G. Banal, M. Funato, Y. Kawakami, Initial nucleation of AlN grown directly on sapphire
substrates by metal-organic vapor phase epitaxy. Appl. Phys. Lett. 92(24), 241905 (2008)
29. R.G. Banal, M. Funato, Y. Kawakami, Characteristics of high Al-content AlGaN/AlN quantum
wells fabricated by modified migration enhanced epitaxy. Physica Status Solidi (c) 7(7–8),
2111–2114 (2010)
30. M. Imura, K. Nakano, N. Fujimoto et al., High-temperature metal-organic vapor phase epitaxial
growth of AlN on sapphire by multi transition growth mode method varying V/III ratio. Jpn.
J. Appl. Phys. 45(11), 8639–8643 (2006)
31. M. Imura, N. Fujimoto, N. Okada et al., Annihilation mechanism of threading dislocations in
AlN grown by growth form modification method using V/III ratio. J. Cryst. Growth 300(1),
136–140 (2007)
32. H. Hirayama, T. Yatabe, N. Noguchi et al., 231-261 nm AlGaN deep-ultraviolet light-emitting
diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire.
Appl. Phys. Lett. 91(7), 071901 (2007)
33. H. Hirayama, T. Yatabe, N. Noguchi et al., 226-273 nm AlGaN deep-ultraviolet light-emitting
diodes fabricated on multilayer AlN buffers on sapphire. Physica Status Solidi (c) 5(9), 2969–
2971 (2008)
34. H. Hirayama, S. Fujikawa, N. Noguchi et al., 222-282 nm AlGaN and InAlGaN-based deep-UV
LEDs fabricated on high-quality AlN on sapphire. Physica Status Solidi (a) 206(6), 1176–1182
(2009)
35. Z. Chen, R.S. Qhalid Fareed, M. Gaevski et al., Pulsed lateral epitaxial overgrowth of aluminum
nitride on sapphire substrates. Appl. Phys. Lett. 89(8), 081905 (2006)
36. M. Shatalov, M. Gaevski, V. Adivarahan et al., Room-temperature stimulated emission from
AlN at 214 nm. Jpn. J. Appl. Phys. 45(49), L1286–L1288 (2006)
37. V. Adivarahan, Q. Fareed, M. Islam et al., Robust 290 nm emission light emitting diodes over
pulsed laterally overgrown AlN. Jpn. J. Appl. Phys. 46(36), L877–L879 (2007)
38. S. Hwang, D. Morgan, A. Kesler et al., 276 nm substrate-free flip-chip AlGaN light-emitting
diodes. Appl. Phys. Express 4(3), 032102 (2011)
39. H. Hirayama, J. Norimatsu, N. Noguchi et al., Milliwatt power 270 nm-band AlGaN deep-UV
LEDs fabricated on ELO-AlN templates. Physica Status Solidi (c) 6(S2), S474–S477 (2009)
40. R. Jain, W. Sun, J. Yang et al., Migration enhanced lateral epitaxial overgrowth of AlN and
AlGaN for high reliability deep ultraviolet light emitting diodes. Appl. Phys. Lett. 93(5), 051113
(2008)
41. M.S. Shur, R. Gaska, Deep-ultraviolet light-emitting diodes. IEEE Trans. Electron Devices
57(1), 12–25 (2010)
42. M. Imura, K. Nakano, T. Kitano et al., Microstructure of epitaxial lateral overgrown AlN on
trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy. Appl.
Phys. Lett. 89(22), 221901 (2006)
43. M. Imura, K. Nakano, G. Narita et al., Epitaxial lateral overgrowth of AlN on trench-patterned
AlN layers. J. Cryst. Growth 298, 257–260 (2007)
44. M. Kim, T. Fujita, S. Fukahori et al., AlGaN-based deep ultraviolet light-emitting diodes
fabricated on patterned sapphire substrates. Appl. Phys. Express 4(9), 092102 (2011)
45. K. Iida, H. Watanabe, K. Takeda et al., High-efficiency AlGaN based UV emitters grown on
high-crystalline-quality AlGaN using grooved AlN layer on sapphire substrate. Physica Status
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109
24. V. Adivarahan, W.H. Sun, A. Chitnis et al., 250nm AlGaN light-emitting diodes. Appl. Phys.
Lett. 85(12), 2175–2177 (2004)
25. V. Adivarahan, J. Zhang, A. Chitnis et al., Sub-milliwatt power III-N light emitting diodes at
285 nm. Jpn. J. Appl. Phys. 41(Part 2, No. 4B), L435-L436 (2002)
26. A. Chitnis, J.P. Zhang, V. Adivarahan et al., 324 nm light emitting diodes with milliwatt powers.
Jpn. J. Appl. Phys. 41(Part 2, No. 4B), L450–L451 (2002)
27. W.H. Sun, J.P. Zhang, V. Adivarahan et al., AlGaN-based 280 nm light-emitting diodes with
continuous wave powers in excess of 1.5 mW. Appl. Phys. Lett. 85(4), 531–533 (2004)
28. R.G. Banal, M. Funato, Y. Kawakami, Initial nucleation of AlN grown directly on sapphire
substrates by metal-organic vapor phase epitaxy. Appl. Phys. Lett. 92(24), 241905 (2008)
29. R.G. Banal, M. Funato, Y. Kawakami, Characteristics of high Al-content AlGaN/AlN quantum
wells fabricated by modified migration enhanced epitaxy. Physica Status Solidi (c) 7(7–8),
2111–2114 (2010)
30. M. Imura, K. Nakano, N. Fujimoto et al., High-temperature metal-organic vapor phase epitaxial
growth of AlN on sapphire by multi transition growth mode method varying V/III ratio. Jpn.
J. Appl. Phys. 45(11), 8639–8643 (2006)
31. M. Imura, N. Fujimoto, N. Okada et al., Annihilation mechanism of threading dislocations in
AlN grown by growth form modification method using V/III ratio. J. Cryst. Growth 300(1),
136–140 (2007)
32. H. Hirayama, T. Yatabe, N. Noguchi et al., 231-261 nm AlGaN deep-ultraviolet light-emitting
diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire.
Appl. Phys. Lett. 91(7), 071901 (2007)
33. H. Hirayama, T. Yatabe, N. Noguchi et al., 226-273 nm AlGaN deep-ultraviolet light-emitting
diodes fabricated on multilayer AlN buffers on sapphire. Physica Status Solidi (c) 5(9), 2969–
2971 (2008)
34. H. Hirayama, S. Fujikawa, N. Noguchi et al., 222-282 nm AlGaN and InAlGaN-based deep-UV
LEDs fabricated on high-quality AlN on sapphire. Physica Status Solidi (a) 206(6), 1176–1182
(2009)
35. Z. Chen, R.S. Qhalid Fareed, M. Gaevski et al., Pulsed lateral epitaxial overgrowth of aluminum
nitride on sapphire substrates. Appl. Phys. Lett. 89(8), 081905 (2006)
36. M. Shatalov, M. Gaevski, V. Adivarahan et al., Room-temperature stimulated emission from
AlN at 214 nm. Jpn. J. Appl. Phys. 45(49), L1286–L1288 (2006)
37. V. Adivarahan, Q. Fareed, M. Islam et al., Robust 290 nm emission light emitting diodes over
pulsed laterally overgrown AlN. Jpn. J. Appl. Phys. 46(36), L877–L879 (2007)
38. S. Hwang, D. Morgan, A. Kesler et al., 276 nm substrate-free flip-chip AlGaN light-emitting
diodes. Appl. Phys. Express 4(3), 032102 (2011)
39. H. Hirayama, J. Norimatsu, N. Noguchi et al., Milliwatt power 270 nm-band AlGaN deep-UV
LEDs fabricated on ELO-AlN templates. Physica Status Solidi (c) 6(S2), S474–S477 (2009)
40. R. Jain, W. Sun, J. Yang et al., Migration enhanced lateral epitaxial overgrowth of AlN and
AlGaN for high reliability deep ultraviolet light emitting diodes. Appl. Phys. Lett. 93(5), 051113
(2008)
41. M.S. Shur, R. Gaska, Deep-ultraviolet light-emitting diodes. IEEE Trans. Electron Devices
57(1), 12–25 (2010)
42. M. Imura, K. Nakano, T. Kitano et al., Microstructure of epitaxial lateral overgrown AlN on
trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy. Appl.
Phys. Lett. 89(22), 221901 (2006)
43. M. Imura, K. Nakano, G. Narita et al., Epitaxial lateral overgrowth of AlN on trench-patterned
AlN layers. J. Cryst. Growth 298, 257–260 (2007)
44. M. Kim, T. Fujita, S. Fukahori et al., AlGaN-based deep ultraviolet light-emitting diodes
fabricated on patterned sapphire substrates. Appl. Phys. Express 4(9), 092102 (2011)
45. K. Iida, H. Watanabe, K. Takeda et al., High-efficiency AlGaN based UV emitters grown on
high-crystalline-quality AlGaN using grooved AlN layer on sapphire substrate. Physica Status
Solidi (a) 204(6), 2000–2004 (2007)