110
6 AlGaN-Based Multiple-Quantum-Well Materials and UV LEDs
46. H. Tsuzuki, F. Mori, K. Takeda et al., Novel UV devices on high-quality AlGaN using grooved
underlying layer. J. Cryst. Growth 311(10), 2860–2863 (2009)
47. R.T. Bondokov, S.G. Mueller, K.E. Morgan et al., Large-area AlN substrates for electronic
applications: An industrial perspective. J. Cryst. Growth 310(17), 4020–4026 (2008)
48. J.R. Grandusky, J. Chen, M.C. Mendrick et al., Improved efficiency high power 260 nm pseudomorphic ultraviolet light emitting diodes, in Lester Eastman Conference on High Performance
Devices (LEC), pp. 1–2 (2012)
49. J.R. Grandusky, J. Chen, S.R. Gibb et al., 270 nm pseudomorphic ultraviolet light-emitting
diodes with over 60 mW continuous wave output power. Appl. Phys. Express 6(3), 032101
(2013)
50. T. Kinoshita, K. Hironaka, T. Obata et al., Deep-ultraviolet light-emitting diodes fabricated on
AlN substrates prepared by hydride vapor phase epitaxy. Appl. Phys. Express 5(12), 122101
(2012)
51. T. Kinoshita, T. Obata, T. Nagashima et al., Performance and reliability of deep-ultraviolet
light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy.
Appl. Phys. Express 6(9), 092103 (2013)
52. B. Pantha, GaN and ZnO-based Materials and Devices (Springer, Berlin,Heidelberg, 2012)
53. J. Li, K.B. Nam, J.Y. Lin et al., Optical and electrical properties of Al-rich AlGaN alloys. Appl.
Phys. Lett. 79(20), 3245–3247 (2001)
54. J.P. Zhang, H.M. Wang, W.H. Sun et al., High-quality AlGaN layers over pulsed atomic-layer
epitaxially grown AlN templates for deep ultraviolet light-emitting diodes. J. Electron. Mater.
32(5), 364–370 (2003)
55. P. Cantu, S. Keller, U.K. Mishra et al., Metalorganic chemical vapor deposition of highly
conductive Al 0.65 Ga 0.35 N films. Appl. Phys. Lett. 82(21), 3683–3685 (2003)
56. M.L. Nakarmi, K.H. Kim, K. Zhu et al., Transport properties of highly conductive n-type
Al-rich Al x Ga 1−x N(x ≥ 0.7). Appl. Phys. Lett. 85(17), 3769–3771 (2004)
57. K. Zhu, M.L. Nakarmi, K.H. Kim et al., Silicon doping dependence of highly conductive n-type
Al 0.7 Ga 0.3 N. Appl. Phys. Lett. 85(20), 4669–4671 (2004)
58. Y. Taniyasu, M. Kasu, T. Makimoto, Electrical conduction properties of n-type Si-doped AlN
with high electron mobility (>100 cm 2 V −1 s −1 ). Appl. Phys. Lett. 85(20), 4672–4674 (2004)
59. M. Kneissl, T. Kolbe, C. Chua et al., Advances in group III-nitride-based deep UV light-emitting
diode technology. Semicond. Sci. Technol. 26(1), 014036 (2011)
60. L. Hsu, W. Walukiewicz, Theoretical transport studies of p-type GaN/AlGaN modulation-doped
heterostructures. Appl. Phys. Lett. 74(17), 2405–2407 (1999)
61. P. Kozodoy, M. Hansen, S.P. DenBaars et al., Enhanced Mg doping efficiency in
Al 0.2 Ga 0.8 N/GaN superlattices. Appl. Phys. Lett. 74(24), 3681–3683
62. A. Saxler, W.C. Mitchel, P. Kung et al., Aluminum gallium nitride short-period superlattices
doped with magnesium. Appl. Phys. Lett. 74(14), 2023–2025 (1999)
63. P. Kozodoy, Y.P. Smorchkova, M. Hansen et al., Polarization-enhanced Mg doping of
AlGaN/GaN superlattices. Appl. Phys. Lett. 75(16), 2444–2446 (1999)
64. M.L. Nakarmi, K.H. Kim, J. Li et al., Enhanced p-type conduction in GaN and AlGaN by
Mg-δ-doping. Appl. Phys. Lett. 82(18), 3041–3043 (2003)
65. J. Simon, V. Protasenko, C. Lian et al., Polarization-induced hole doping in wide-band-gap
uniaxial semiconductor heterostructures. Science 327(5961), 60–64 (2010)
66. L. Zhang, K. Ding, J.C. Yan et al., Three-dimensional hole gas induced by polarization in
(0001)-oriented metal-face III-nitride structure. Appl. Phys. Lett. 97(6), 062103 (2010)
67. A. Fujioka, T. Misaki, T. Murayama et al., Improvement in output power of 280-nm deep
ultraviolet light-emitting diode by using AlGaN multi quantum wells. Appl. Phys. Express
3(4), 041001 (2010)
68. S. Sumiya, Y. Zhu, J. Zhang et al., AlGaN-based deep ultraviolet light-emitting diodes grown
on epitaxial AlN/sapphire templates. Jpn. J. Appl. Phys. 47(1), 43–46 (2008)
69. H. Hirayama, Y. Tsukada, T. Maeda et al., Marked enhancement in the efficiency of deepultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking
layer. Appl. Phys. Express 3(3), 031002 (2010)
6 AlGaN-Based Multiple-Quantum-Well Materials and UV LEDs
46. H. Tsuzuki, F. Mori, K. Takeda et al., Novel UV devices on high-quality AlGaN using grooved
underlying layer. J. Cryst. Growth 311(10), 2860–2863 (2009)
47. R.T. Bondokov, S.G. Mueller, K.E. Morgan et al., Large-area AlN substrates for electronic
applications: An industrial perspective. J. Cryst. Growth 310(17), 4020–4026 (2008)
48. J.R. Grandusky, J. Chen, M.C. Mendrick et al., Improved efficiency high power 260 nm pseudomorphic ultraviolet light emitting diodes, in Lester Eastman Conference on High Performance
Devices (LEC), pp. 1–2 (2012)
49. J.R. Grandusky, J. Chen, S.R. Gibb et al., 270 nm pseudomorphic ultraviolet light-emitting
diodes with over 60 mW continuous wave output power. Appl. Phys. Express 6(3), 032101
(2013)
50. T. Kinoshita, K. Hironaka, T. Obata et al., Deep-ultraviolet light-emitting diodes fabricated on
AlN substrates prepared by hydride vapor phase epitaxy. Appl. Phys. Express 5(12), 122101
(2012)
51. T. Kinoshita, T. Obata, T. Nagashima et al., Performance and reliability of deep-ultraviolet
light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy.
Appl. Phys. Express 6(9), 092103 (2013)
52. B. Pantha, GaN and ZnO-based Materials and Devices (Springer, Berlin,Heidelberg, 2012)
53. J. Li, K.B. Nam, J.Y. Lin et al., Optical and electrical properties of Al-rich AlGaN alloys. Appl.
Phys. Lett. 79(20), 3245–3247 (2001)
54. J.P. Zhang, H.M. Wang, W.H. Sun et al., High-quality AlGaN layers over pulsed atomic-layer
epitaxially grown AlN templates for deep ultraviolet light-emitting diodes. J. Electron. Mater.
32(5), 364–370 (2003)
55. P. Cantu, S. Keller, U.K. Mishra et al., Metalorganic chemical vapor deposition of highly
conductive Al 0.65 Ga 0.35 N films. Appl. Phys. Lett. 82(21), 3683–3685 (2003)
56. M.L. Nakarmi, K.H. Kim, K. Zhu et al., Transport properties of highly conductive n-type
Al-rich Al x Ga 1−x N(x ≥ 0.7). Appl. Phys. Lett. 85(17), 3769–3771 (2004)
57. K. Zhu, M.L. Nakarmi, K.H. Kim et al., Silicon doping dependence of highly conductive n-type
Al 0.7 Ga 0.3 N. Appl. Phys. Lett. 85(20), 4669–4671 (2004)
58. Y. Taniyasu, M. Kasu, T. Makimoto, Electrical conduction properties of n-type Si-doped AlN
with high electron mobility (>100 cm 2 V −1 s −1 ). Appl. Phys. Lett. 85(20), 4672–4674 (2004)
59. M. Kneissl, T. Kolbe, C. Chua et al., Advances in group III-nitride-based deep UV light-emitting
diode technology. Semicond. Sci. Technol. 26(1), 014036 (2011)
60. L. Hsu, W. Walukiewicz, Theoretical transport studies of p-type GaN/AlGaN modulation-doped
heterostructures. Appl. Phys. Lett. 74(17), 2405–2407 (1999)
61. P. Kozodoy, M. Hansen, S.P. DenBaars et al., Enhanced Mg doping efficiency in
Al 0.2 Ga 0.8 N/GaN superlattices. Appl. Phys. Lett. 74(24), 3681–3683
62. A. Saxler, W.C. Mitchel, P. Kung et al., Aluminum gallium nitride short-period superlattices
doped with magnesium. Appl. Phys. Lett. 74(14), 2023–2025 (1999)
63. P. Kozodoy, Y.P. Smorchkova, M. Hansen et al., Polarization-enhanced Mg doping of
AlGaN/GaN superlattices. Appl. Phys. Lett. 75(16), 2444–2446 (1999)
64. M.L. Nakarmi, K.H. Kim, J. Li et al., Enhanced p-type conduction in GaN and AlGaN by
Mg-δ-doping. Appl. Phys. Lett. 82(18), 3041–3043 (2003)
65. J. Simon, V. Protasenko, C. Lian et al., Polarization-induced hole doping in wide-band-gap
uniaxial semiconductor heterostructures. Science 327(5961), 60–64 (2010)
66. L. Zhang, K. Ding, J.C. Yan et al., Three-dimensional hole gas induced by polarization in
(0001)-oriented metal-face III-nitride structure. Appl. Phys. Lett. 97(6), 062103 (2010)
67. A. Fujioka, T. Misaki, T. Murayama et al., Improvement in output power of 280-nm deep
ultraviolet light-emitting diode by using AlGaN multi quantum wells. Appl. Phys. Express
3(4), 041001 (2010)
68. S. Sumiya, Y. Zhu, J. Zhang et al., AlGaN-based deep ultraviolet light-emitting diodes grown
on epitaxial AlN/sapphire templates. Jpn. J. Appl. Phys. 47(1), 43–46 (2008)
69. H. Hirayama, Y. Tsukada, T. Maeda et al., Marked enhancement in the efficiency of deepultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking
layer. Appl. Phys. Express 3(3), 031002 (2010)