108
6 AlGaN-Based Multiple-Quantum-Well Materials and UV LEDs
References
1. H. Hirayama, N. Noguchi, S. Fujikawa et al., 222–282 nm AlGaN and InAlGaN based deep-UV
LEDs fabricated on high-quality AlN template. Proc. SPIE 7216, 721621 (2009)
2. H. Morkoç, Handbook of Nitride semiconductors and devices: materials properties, physics
and growth (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2008)
3. O. Ambacher, Growth and applications of group III-nitrides. J. Phys. D Appl. Phys. 31(20),
2653–2710 (1998)
4. O.H. Nam, M.D. Bremser, T.S. Zheleva et al., Lateral epitaxy of low defect density GaN layers
via organometallic vapor phase epitaxy. Appl. Phys. Lett. 71(18), 2638–2640 (1997)
5. M. Stutzmann, O. Ambacher, M. Eickhoff et al., Playing with polarity. Physica Status Solidi(b)
228(2), 505–512 (2001)
6. T.G. Mihopoulos, V. Gupta, K.F. Jensen, A reaction-transport model for AlGaN MOVPE
growth. J. Cryst. Growth 195(1–4), 733–739 (1998)
7. K. Harafuji, Transport of gas-phase species stored in stagnant volumes under a GaN
metalorganic vapor phase epitaxy horizontal reactor. Jpn. J. Appl. Phys. 40(11), 6263–6283
(2001)
8. B. Heying, X.H. Wu, S. Keller et al., Role of threading dislocation structure on the X-ray
diffraction peak widths in epitaxial GaN films. Appl. Phys. Lett. 68(5), 643–645 (1996)
9. S.R. Lee, A.F. Wright, M.H. Crawford et al., The band-gap bowing of Al x Ga 1−x N alloys. Appl.
Phys. Lett. 74(22), 3344–3346 (1999)
10. O. Ambacher, J. Majewski, C. Miskys et al., Pyroelectric properties of Al(In)GaN/GaN heteroand quantum well structures. J. Phys.: Condens. Matter 14(13), 3399–3434 (2002)
11. A. Khan, K. Balakrishnan, T. Katona et al., Ultraviolet light-emitting diodes based on group
three nitrides. Nat. Photonics 2(2), 77–84 (2008)
12. C.J. Sun, P. Kung, A. Saxler et al., A crystallographic model of (001) aluminum nitride epitaxial
thin film growth on (001) sapphire substrate. J. Appl. Phys. 75(8), 3964–3967 (1994)
13. S. Guha, N.A. Bojarczuk, Ultraviolet and violet GaN light emitting diodes on silicon. Appl.
Phys. Lett. 72(4), 415–417 (1998)
14. N. Ikeda, Y. Niiyama, H. Kambayashi et al., GaN power transistors on Si substrates for switching
applications. Proc. IEEE 98(7), 1151–1161 (2010)
15. T. Mino, H. Hirayama, T. Takano et al., Development of 260 nm band deep-ultraviolet light
emitting diodes on Si substrates. Proc. SPIE 8625, 86251Q (2013)
16. Y. Zhang, S. Gautier, C.-Y. Cho et al., Near milliwatt power AlGaN-based ultraviolet light
emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111). Appl. Phys. Lett.
102(1), 011106 (2013)
17. http://www.compoundsemiconductor.net/csc/features-details.php?id=19732954
18. M.A. Khan, J.N. Kuznia, D.T. Olson et al., GaN/AlN digital alloy short-period superlattices
by switched atomic layer metal organic chemical vapor deposition. Appl. Phys. Lett. 63(25),
3470–3472 (1993)
19. M.A. Khan, V. Adivarahan, J.P. Zhang et al., Stripe geometry ultraviolet light emitting diodes
at 305 nanometers using quaternary AlInGaN multiple quantum wells. Jpn. J. Appl. Phys.
40(12A), 1308–1310 (2001)
20. J.P. Zhang, E. Kuokstis, Q. Fareed et al., Pulsed atomic layer epitaxy of quaternary AlInGaN
layers for ultraviolet light emitters. Physica Status Solidi a-Appl. Res. 188(1), 95–99 (2001)
21. J.P. Zhang, M.A. Khan, W.H. Sun et al., Pulsed atomic-layer epitaxy of ultrahigh-quality
Al x Ga 1-x N structures for deep ultraviolet emissions below 230 nm. Appl. Phys. Lett. 81(23),
4392–4394 (2002)
22. H.M. Wang, J.P. Zhang, C.Q. Chen et al., AlN/AlGaN superlattices as dislocation filter for
low-threading-dislocation thick AlGaN layers on sapphire. Appl. Phys. Lett. 81(4), 604–606
(2002)
23. J.P. Zhang, H.M. Wang, M.E. Gaevski et al., Crack-free thick AlGaN grown on sapphire using
AlN AlGaN superlattices for strain management. Appl. Phys. Lett. 80(19), 3542–3544 (2002)
6 AlGaN-Based Multiple-Quantum-Well Materials and UV LEDs
References
1. H. Hirayama, N. Noguchi, S. Fujikawa et al., 222–282 nm AlGaN and InAlGaN based deep-UV
LEDs fabricated on high-quality AlN template. Proc. SPIE 7216, 721621 (2009)
2. H. Morkoç, Handbook of Nitride semiconductors and devices: materials properties, physics
and growth (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2008)
3. O. Ambacher, Growth and applications of group III-nitrides. J. Phys. D Appl. Phys. 31(20),
2653–2710 (1998)
4. O.H. Nam, M.D. Bremser, T.S. Zheleva et al., Lateral epitaxy of low defect density GaN layers
via organometallic vapor phase epitaxy. Appl. Phys. Lett. 71(18), 2638–2640 (1997)
5. M. Stutzmann, O. Ambacher, M. Eickhoff et al., Playing with polarity. Physica Status Solidi(b)
228(2), 505–512 (2001)
6. T.G. Mihopoulos, V. Gupta, K.F. Jensen, A reaction-transport model for AlGaN MOVPE
growth. J. Cryst. Growth 195(1–4), 733–739 (1998)
7. K. Harafuji, Transport of gas-phase species stored in stagnant volumes under a GaN
metalorganic vapor phase epitaxy horizontal reactor. Jpn. J. Appl. Phys. 40(11), 6263–6283
(2001)
8. B. Heying, X.H. Wu, S. Keller et al., Role of threading dislocation structure on the X-ray
diffraction peak widths in epitaxial GaN films. Appl. Phys. Lett. 68(5), 643–645 (1996)
9. S.R. Lee, A.F. Wright, M.H. Crawford et al., The band-gap bowing of Al x Ga 1−x N alloys. Appl.
Phys. Lett. 74(22), 3344–3346 (1999)
10. O. Ambacher, J. Majewski, C. Miskys et al., Pyroelectric properties of Al(In)GaN/GaN heteroand quantum well structures. J. Phys.: Condens. Matter 14(13), 3399–3434 (2002)
11. A. Khan, K. Balakrishnan, T. Katona et al., Ultraviolet light-emitting diodes based on group
three nitrides. Nat. Photonics 2(2), 77–84 (2008)
12. C.J. Sun, P. Kung, A. Saxler et al., A crystallographic model of (001) aluminum nitride epitaxial
thin film growth on (001) sapphire substrate. J. Appl. Phys. 75(8), 3964–3967 (1994)
13. S. Guha, N.A. Bojarczuk, Ultraviolet and violet GaN light emitting diodes on silicon. Appl.
Phys. Lett. 72(4), 415–417 (1998)
14. N. Ikeda, Y. Niiyama, H. Kambayashi et al., GaN power transistors on Si substrates for switching
applications. Proc. IEEE 98(7), 1151–1161 (2010)
15. T. Mino, H. Hirayama, T. Takano et al., Development of 260 nm band deep-ultraviolet light
emitting diodes on Si substrates. Proc. SPIE 8625, 86251Q (2013)
16. Y. Zhang, S. Gautier, C.-Y. Cho et al., Near milliwatt power AlGaN-based ultraviolet light
emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111). Appl. Phys. Lett.
102(1), 011106 (2013)
17. http://www.compoundsemiconductor.net/csc/features-details.php?id=19732954
18. M.A. Khan, J.N. Kuznia, D.T. Olson et al., GaN/AlN digital alloy short-period superlattices
by switched atomic layer metal organic chemical vapor deposition. Appl. Phys. Lett. 63(25),
3470–3472 (1993)
19. M.A. Khan, V. Adivarahan, J.P. Zhang et al., Stripe geometry ultraviolet light emitting diodes
at 305 nanometers using quaternary AlInGaN multiple quantum wells. Jpn. J. Appl. Phys.
40(12A), 1308–1310 (2001)
20. J.P. Zhang, E. Kuokstis, Q. Fareed et al., Pulsed atomic layer epitaxy of quaternary AlInGaN
layers for ultraviolet light emitters. Physica Status Solidi a-Appl. Res. 188(1), 95–99 (2001)
21. J.P. Zhang, M.A. Khan, W.H. Sun et al., Pulsed atomic-layer epitaxy of ultrahigh-quality
Al x Ga 1-x N structures for deep ultraviolet emissions below 230 nm. Appl. Phys. Lett. 81(23),
4392–4394 (2002)
22. H.M. Wang, J.P. Zhang, C.Q. Chen et al., AlN/AlGaN superlattices as dislocation filter for
low-threading-dislocation thick AlGaN layers on sapphire. Appl. Phys. Lett. 81(4), 604–606
(2002)
23. J.P. Zhang, H.M. Wang, M.E. Gaevski et al., Crack-free thick AlGaN grown on sapphire using
AlN AlGaN superlattices for strain management. Appl. Phys. Lett. 80(19), 3542–3544 (2002)