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527 (2000), p. 1002
16. T. Wang, J. Bai, S. Sakai, I.I. Ipap, The investigation on the emission mechanism of
InGaN/GaN quantum well structure, in Proceedings of the International Workshop on Nitride
Semiconductors (Inst Pure Applied Physics, Tokyo, 2000), pp. 524–527
17. C.C. Lin, C.H. Chiu, H.W. Huang, S.P. Chang, H.C. Kuo, C.Y. Chang, Highly efficient InGaNbased light emitting devices grown on nanoscale patterned substrates by MOCVD, in Proceedings Paper, Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy III,
vol. 8312 (2011)
18. F. Della Sala, A. Di Carlo et al., Free-carrier screening of polarization fields in wurtzite
GaN/InGaN laser structures. Appl. Phys. Lett. 74, 2002–2004 (1999)
19. M.D. McCluskey, C.G. Van de Walle, C.P. Master, L.T. Romano, N.M. Johnson, Large band
gap bowing of In x Ga 1-x N alloys. Appl. Phys. Lett. 72, 2725–2726 (1998)
20. P.R.C. Kent, G.L.W. Hart, A. Zunger, Biaxial strain-modified valence and conduction band
offsets of zinc-blende GaN, GaP, GaAs, InN, InP, and InAs, and optical bowing of strained
epitaxial InGaN alloys. Appl. Phys. Lett. 81, 4377–4379 (2002)
21. W. Lu, C.R. Li, Z. Zhang, Study of band structure In x Ga 1-x N/GaN multiple quantum wells by
high-resolution electron microscopy and electron holography. Appl. Phys. Lett. 86 (2005)
22. S.W. Feng, Y.C. Cheng et al., Impact of localized states on the recombination dynamics in
InGaN/GaN quantum well structures. J. Appl. Phys. 92, 4441–4448 (2002)
23. M.A. Semina, R.A. Sergeev, R.A. Suris, Electron-hole complexes localized on the quantum
well interface roughnesses. Phys. Status Solidi C Curr. Top. Solid State Phys. 4(2), 363–365
(2007)
24. L.J. Brillson, T.M. Levin, G.H. Jessen, F.A. Ponce, Localized states at InGaN/GaN quantum
well interfaces. Appl. Phys. Lett. 75, 3835–3837 (1999)
25. M.Y. Ryu, J.H. Song et al., Localized excitons in In x Ga 1-x N/GaN quantum well structure. J.
Korean Phys. Soc. 33, S316–S318 (1998)
26. L.E. Golub, S.V. Ivanov et al., Low-temperature kinetics of localized excitons in quantum-well
structures. Phys. Status Solidi B-Basic Solid State Phys. 205, 203–208 (1998)
27. J.H. Na, R.A. Taylor, et al., Dependence of carrier localization in InGaN/GaN multiple-quantum
wells on well thickness. Appl. Phys. Lett. 89 (2006)
28. Y.H. Cho, G.H. Gainer et al., “S-shaped” temperature-dependent emission shift and carrier
dynamics in InGaN/GaN multiple quantum wells. Appl. Phys. Lett. 73, 1370–1372 (1998)
29. G. Sun, G.B. Xu, et al., Investigation of fast and slow decays in InGaN/GaN quantum wells.
Appl. Phys. Lett. 99 (2011)
30. K. Jacobs, B. Van Daele, M.R. Leys, I. Moerman, G. Van Tendeloo, Effect of growth interrupt
and growth rate on MOVPE-grown InGaN/GaN MQW structures. J. Cryst. Growth 248, 498–
502 (2003)
31. C.F. Huang, T.Y. Tang, et al., Prestrained effect on the emission properties of InGaN/GaN
quantum-well structures. Appl. Phys. Lett. 89 (2006)
32. Y. Yang, X.A. Cao, C.H. Yan, Rapid efficiency roll-off in high-quality green light-emitting
diodes on freestanding GaN substrates. Appl. Phys. Lett. 94 (2009)
33. M. Kneiss, J. Rass, L. Schade, U. Schwarz, Growth and optical properties of GaN-based nonand semipolar LEDs, in III-Nitride Based Light Emitting Diodes and Applications, ed. by T.-Y.
Seong, J. Han, H. Amano, H. Morkoc (Springer Netherlands, 2013), pp. 83–119
34. Y. Hao, J.F. Zhang, J.C. Zhang, Nitride Based Wide Bandgap Semiconductor Materials and
Electronic Devices. China Science Publishing Ltd., ISBN: 9787030367174 (2013) (in Chinese)
35. P. Waltereit, O. Brandt et al., Nitride semiconductors free of electrostatic fields for efficient
white light-emitting diodes. Nature 406, 865–868 (2000)
36. R. Sharma, P.M. Pattison, et al., Demonstration of a semipolar (10(1)over-bar1(3)over-bar)
InGaN/GaN green light emitting diode. Appl. Phys. Lett. 87 (2005)
37. T. Guhne, P. DeMierry, M. Nemoz, E. Beraudo, S. Chenot, G. Nataf, Demonstration of
semipolar (11-22) InGaN/GaN blue-green light emitting diode. Electron. Lett. 44, 231–U221
(2008)
91
15. T. Wang, J. Bai, S. Sakai, The investigation on the emission mechanism of InGaN/GaN quantum
well structure, in Proceedings of International Workshop on Nitride Semiconductors, vol. 524–
527 (2000), p. 1002
16. T. Wang, J. Bai, S. Sakai, I.I. Ipap, The investigation on the emission mechanism of
InGaN/GaN quantum well structure, in Proceedings of the International Workshop on Nitride
Semiconductors (Inst Pure Applied Physics, Tokyo, 2000), pp. 524–527
17. C.C. Lin, C.H. Chiu, H.W. Huang, S.P. Chang, H.C. Kuo, C.Y. Chang, Highly efficient InGaNbased light emitting devices grown on nanoscale patterned substrates by MOCVD, in Proceedings Paper, Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy III,
vol. 8312 (2011)
18. F. Della Sala, A. Di Carlo et al., Free-carrier screening of polarization fields in wurtzite
GaN/InGaN laser structures. Appl. Phys. Lett. 74, 2002–2004 (1999)
19. M.D. McCluskey, C.G. Van de Walle, C.P. Master, L.T. Romano, N.M. Johnson, Large band
gap bowing of In x Ga 1-x N alloys. Appl. Phys. Lett. 72, 2725–2726 (1998)
20. P.R.C. Kent, G.L.W. Hart, A. Zunger, Biaxial strain-modified valence and conduction band
offsets of zinc-blende GaN, GaP, GaAs, InN, InP, and InAs, and optical bowing of strained
epitaxial InGaN alloys. Appl. Phys. Lett. 81, 4377–4379 (2002)
21. W. Lu, C.R. Li, Z. Zhang, Study of band structure In x Ga 1-x N/GaN multiple quantum wells by
high-resolution electron microscopy and electron holography. Appl. Phys. Lett. 86 (2005)
22. S.W. Feng, Y.C. Cheng et al., Impact of localized states on the recombination dynamics in
InGaN/GaN quantum well structures. J. Appl. Phys. 92, 4441–4448 (2002)
23. M.A. Semina, R.A. Sergeev, R.A. Suris, Electron-hole complexes localized on the quantum
well interface roughnesses. Phys. Status Solidi C Curr. Top. Solid State Phys. 4(2), 363–365
(2007)
24. L.J. Brillson, T.M. Levin, G.H. Jessen, F.A. Ponce, Localized states at InGaN/GaN quantum
well interfaces. Appl. Phys. Lett. 75, 3835–3837 (1999)
25. M.Y. Ryu, J.H. Song et al., Localized excitons in In x Ga 1-x N/GaN quantum well structure. J.
Korean Phys. Soc. 33, S316–S318 (1998)
26. L.E. Golub, S.V. Ivanov et al., Low-temperature kinetics of localized excitons in quantum-well
structures. Phys. Status Solidi B-Basic Solid State Phys. 205, 203–208 (1998)
27. J.H. Na, R.A. Taylor, et al., Dependence of carrier localization in InGaN/GaN multiple-quantum
wells on well thickness. Appl. Phys. Lett. 89 (2006)
28. Y.H. Cho, G.H. Gainer et al., “S-shaped” temperature-dependent emission shift and carrier
dynamics in InGaN/GaN multiple quantum wells. Appl. Phys. Lett. 73, 1370–1372 (1998)
29. G. Sun, G.B. Xu, et al., Investigation of fast and slow decays in InGaN/GaN quantum wells.
Appl. Phys. Lett. 99 (2011)
30. K. Jacobs, B. Van Daele, M.R. Leys, I. Moerman, G. Van Tendeloo, Effect of growth interrupt
and growth rate on MOVPE-grown InGaN/GaN MQW structures. J. Cryst. Growth 248, 498–
502 (2003)
31. C.F. Huang, T.Y. Tang, et al., Prestrained effect on the emission properties of InGaN/GaN
quantum-well structures. Appl. Phys. Lett. 89 (2006)
32. Y. Yang, X.A. Cao, C.H. Yan, Rapid efficiency roll-off in high-quality green light-emitting
diodes on freestanding GaN substrates. Appl. Phys. Lett. 94 (2009)
33. M. Kneiss, J. Rass, L. Schade, U. Schwarz, Growth and optical properties of GaN-based nonand semipolar LEDs, in III-Nitride Based Light Emitting Diodes and Applications, ed. by T.-Y.
Seong, J. Han, H. Amano, H. Morkoc (Springer Netherlands, 2013), pp. 83–119
34. Y. Hao, J.F. Zhang, J.C. Zhang, Nitride Based Wide Bandgap Semiconductor Materials and
Electronic Devices. China Science Publishing Ltd., ISBN: 9787030367174 (2013) (in Chinese)
35. P. Waltereit, O. Brandt et al., Nitride semiconductors free of electrostatic fields for efficient
white light-emitting diodes. Nature 406, 865–868 (2000)
36. R. Sharma, P.M. Pattison, et al., Demonstration of a semipolar (10(1)over-bar1(3)over-bar)
InGaN/GaN green light emitting diode. Appl. Phys. Lett. 87 (2005)
37. T. Guhne, P. DeMierry, M. Nemoz, E. Beraudo, S. Chenot, G. Nataf, Demonstration of
semipolar (11-22) InGaN/GaN blue-green light emitting diode. Electron. Lett. 44, 231–U221
(2008)