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38. J.S. Speck, S.F. Chichibu, Nonpolar and semipolar group III nitride-based materials. MRS
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39. A.E. Romanov, T.J. Baker, S. Nakamura, J.S. Speck, Strain-induced polarization in wurtzite
III-nitride semipolar layers. J. Appl. Phys. 100 (2006)
40. Y.J. Zhao, J. Sonoda, et al., 30-mW-class high-power and high-efficiency blue semipolar
(10(1)over-bar(1)over-bar) InGaN/GaN light-emitting diodes obtained by backside roughening
technique. Appl. Phys. Express 3 (2010)
41. S. Yamamoto, Y.J. Zhao, et al., High-efficiency single-quantum-well green and yellow-green
light-emitting diodes on semipolar (20(2)over-bar1) GaN substrates. Appl. Phys. Express 3
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42. C.Y. Huang, Q.M. Yan, et al., Influence of Mg-doped barriers on semipolar (20(2)over-bar1)
multiple-quantum-well green light-emitting diodes. Appl. Phys. Lett. 99 (2011)
5 InGaN/GaN Multiple Quantum Wells Materials …
38. J.S. Speck, S.F. Chichibu, Nonpolar and semipolar group III nitride-based materials. MRS
Bull. 34, 304–312 (2009)
39. A.E. Romanov, T.J. Baker, S. Nakamura, J.S. Speck, Strain-induced polarization in wurtzite
III-nitride semipolar layers. J. Appl. Phys. 100 (2006)
40. Y.J. Zhao, J. Sonoda, et al., 30-mW-class high-power and high-efficiency blue semipolar
(10(1)over-bar(1)over-bar) InGaN/GaN light-emitting diodes obtained by backside roughening
technique. Appl. Phys. Express 3 (2010)
41. S. Yamamoto, Y.J. Zhao, et al., High-efficiency single-quantum-well green and yellow-green
light-emitting diodes on semipolar (20(2)over-bar1) GaN substrates. Appl. Phys. Express 3
(2010)
42. C.Y. Huang, Q.M. Yan, et al., Influence of Mg-doped barriers on semipolar (20(2)over-bar1)
multiple-quantum-well green light-emitting diodes. Appl. Phys. Lett. 99 (2011)