90
5 InGaN/GaN Multiple Quantum Wells Materials …
this direction. At present, the level of semi-polar long wavelengths yellow-green
LEDs has surpassed the best level of traditional c-plane yellow-green LEDs, letting
people see the hope. At the end of 2010, UCSB released a blue semi-polar LED
on the (10-11) GaN substrate. The output power was 31.1 mW at 20 mA and the
external quantum efficiency was 54.7% [40]. At the same time, the droop effect of
the LED was greatly reduced compared with conventional c-plane devices. UCSB
immediately reported the green LED results obtained on the (11-22) GaN substrate,
with an output power of 9.9 mW at 20 mA and the external quantum efficiency of
up to 20.4% [41], showing the superiority of semi-polarity in the growth of high In
composition InGaN. In 2011, green LEDs were homoepitaxially grown on (20-21)
GaN substrates through doping Mg [42] in quantum barriers, which increases the
hole recombination concentration in semi-polar quantum wells and further improves
the performance of green LEDs.
References
1. H. Amano, N. Sawaki, I. Akasaki, Y. Toyoda, Metalorganic vapor-phase epitaxial-growth of a
high-quality GaN film using an AIN buffer layer. Appl. Phys. Lett. 48, 353–355 (1986)
2. H. Amano, M. Kito, K. Hiramatsu, I. Akasaki, p-type conduction in Mg-doped GaN treated
with low-energy electron-beam irradiation (LEEBI). Jpn. J. Appl. Phys. Part 2 Lett. 28, L2112–
L2114 (1989)
3. H. Morkoç, Light-Emitting Diodes and Lighting. Nitride Semiconductor Devices (Wiley-VCH
Verlag GmbH & Co., KGaA, 2013), pp. 209–266
4. R.D. Dupuis, Epitaxial growth of III-V nitride semiconductors by metalorganic chemical vapor
deposition. J. Cryst. Growth 178, 56–73 (1997)
5. O. Ambacher, Growth and applications of group III nitrides. J. Phys. D-Appl. Phys. 31, 2653–
2710 (1998)
6. F. Bernardini, V. Fiorentini, D. Vanderbilt, Spontaneous polarization and piezoelectric constants
of III-V nitrides. Phys. Rev. B. 56, 10024–10027 (1997)
7. F. Bernardini, V. Fiorentini, Nonlinear behavior of spontaneous and piezoelectric polarization
in III-V nitride alloys. Phys. Status Solidi A-Appl. Mater. Sci. 190, 65–73 (2002)
8. B. Doshi, K.F. Brennan, R. Bicknell-Tassius, F. Grunthaner, The effect of strain-induced polarization fields on impact ionization in a multi-quantum-well structure. Appl. Phys. Lett. 73,
2784–2786 (1998)
9. Y.Z. Deng, Y.C. Kong et al., Study on strain and piezoelectric polarization of AlN thin films
grown on Si. J. Vac. Sci. Technol. A 23, 628–630 (2005)
10. A.E. Romanov, T.J. Baker, S. Nakamura, J.S. Speck, E.J.U. Grp, Strain-induced polarization
in wurtzite III-nitride semipolar layers. J. Appl. Phys. 100(2), 023522 (2006)
11. B. Gil, P. Bigenwald, O. Briota, Polarization fields in wurtzite strained layers grown on (hkl)
planes. Superlattices Microstruct. 44, 291–301 (2008)
12. N. Zhang, polarization engineering and approaches for high-performance GaN-based green
light-emitting diodes. Ph.D. thesis, University of Chinese Academy of Sciences (2013) (in
Chinese)
13. E.T. Yu, X.Z. Dang, P.M. Asbeck, S.S. Lau, G.J. Sullivan, Spontaneous and piezoelectric
polarization effects in III-V nitride heterostructures. J. Vac. Sci. Technol. B 17, 1742–1749
(1999)
14. L.Y. Chen, C.Y. Wang, C.P. Chen, Y.W. Cheng, M.Y. Ke, J.J. Huang, Quantum confine
stark effect suppressed nanorod structure light emitting diode, in 2008 IEEE Photonicsglobal@Singapore (Ipgc), vols. 1 and 2 (2008), pp. 129–132
5 InGaN/GaN Multiple Quantum Wells Materials …
this direction. At present, the level of semi-polar long wavelengths yellow-green
LEDs has surpassed the best level of traditional c-plane yellow-green LEDs, letting
people see the hope. At the end of 2010, UCSB released a blue semi-polar LED
on the (10-11) GaN substrate. The output power was 31.1 mW at 20 mA and the
external quantum efficiency was 54.7% [40]. At the same time, the droop effect of
the LED was greatly reduced compared with conventional c-plane devices. UCSB
immediately reported the green LED results obtained on the (11-22) GaN substrate,
with an output power of 9.9 mW at 20 mA and the external quantum efficiency of
up to 20.4% [41], showing the superiority of semi-polarity in the growth of high In
composition InGaN. In 2011, green LEDs were homoepitaxially grown on (20-21)
GaN substrates through doping Mg [42] in quantum barriers, which increases the
hole recombination concentration in semi-polar quantum wells and further improves
the performance of green LEDs.
References
1. H. Amano, N. Sawaki, I. Akasaki, Y. Toyoda, Metalorganic vapor-phase epitaxial-growth of a
high-quality GaN film using an AIN buffer layer. Appl. Phys. Lett. 48, 353–355 (1986)
2. H. Amano, M. Kito, K. Hiramatsu, I. Akasaki, p-type conduction in Mg-doped GaN treated
with low-energy electron-beam irradiation (LEEBI). Jpn. J. Appl. Phys. Part 2 Lett. 28, L2112–
L2114 (1989)
3. H. Morkoç, Light-Emitting Diodes and Lighting. Nitride Semiconductor Devices (Wiley-VCH
Verlag GmbH & Co., KGaA, 2013), pp. 209–266
4. R.D. Dupuis, Epitaxial growth of III-V nitride semiconductors by metalorganic chemical vapor
deposition. J. Cryst. Growth 178, 56–73 (1997)
5. O. Ambacher, Growth and applications of group III nitrides. J. Phys. D-Appl. Phys. 31, 2653–
2710 (1998)
6. F. Bernardini, V. Fiorentini, D. Vanderbilt, Spontaneous polarization and piezoelectric constants
of III-V nitrides. Phys. Rev. B. 56, 10024–10027 (1997)
7. F. Bernardini, V. Fiorentini, Nonlinear behavior of spontaneous and piezoelectric polarization
in III-V nitride alloys. Phys. Status Solidi A-Appl. Mater. Sci. 190, 65–73 (2002)
8. B. Doshi, K.F. Brennan, R. Bicknell-Tassius, F. Grunthaner, The effect of strain-induced polarization fields on impact ionization in a multi-quantum-well structure. Appl. Phys. Lett. 73,
2784–2786 (1998)
9. Y.Z. Deng, Y.C. Kong et al., Study on strain and piezoelectric polarization of AlN thin films
grown on Si. J. Vac. Sci. Technol. A 23, 628–630 (2005)
10. A.E. Romanov, T.J. Baker, S. Nakamura, J.S. Speck, E.J.U. Grp, Strain-induced polarization
in wurtzite III-nitride semipolar layers. J. Appl. Phys. 100(2), 023522 (2006)
11. B. Gil, P. Bigenwald, O. Briota, Polarization fields in wurtzite strained layers grown on (hkl)
planes. Superlattices Microstruct. 44, 291–301 (2008)
12. N. Zhang, polarization engineering and approaches for high-performance GaN-based green
light-emitting diodes. Ph.D. thesis, University of Chinese Academy of Sciences (2013) (in
Chinese)
13. E.T. Yu, X.Z. Dang, P.M. Asbeck, S.S. Lau, G.J. Sullivan, Spontaneous and piezoelectric
polarization effects in III-V nitride heterostructures. J. Vac. Sci. Technol. B 17, 1742–1749
(1999)
14. L.Y. Chen, C.Y. Wang, C.P. Chen, Y.W. Cheng, M.Y. Ke, J.J. Huang, Quantum confine
stark effect suppressed nanorod structure light emitting diode, in 2008 IEEE Photonicsglobal@Singapore (Ipgc), vols. 1 and 2 (2008), pp. 129–132