On the Quantum Capacitance
of Quantum Wire Field-Effect
Transistors of Compound
Semiconductors
A. H. Seikh, N. Alharthi, P. K. Bose and K. P. Ghatak
Abstract This chapter explores the quantum capacitance (C g ) in quantum wire
field-effect transistors (QWFETs) manufactured from completely different technologically vital nonstandard materials by using all types of anisotropies of band
structures in addition to splitting of bands due to large fields of the crystals
inside the framework of Kane’s matrix methodology that successively generates
new 1D dimensional electron energy versus wave vector relation. We derive the C g
under very low temperature so that the Fermi function tends to unity for QWFETs
of Cd 3 As 2 , CdGeAs 2 , InSb, Hg 1−x Cd x Te, InAs, GaAs, In 1−x Ga x As y P 1−y IV–VI,
stressed materials,Te, GaP,PtSb 2 , Bi 2 Te 3 , Ge, GaSb and II–V compounds using the
appropriate band models. The C g becomes the functions of the thickness of the
quantum-confined transistors. The C g varies with varying film thickness in various
quantized steps and saw-tooth manners with different numerical values.
Keywords Quantum capacitance · Quantum wire field effect transistors ·
Compound semiconductors · Film thickness
The C g for the QWFETs of all the materials as considered here increases with increasing 1D electron statistics in step-like fashion and decreases in an oscillatory way
with the increasing gate voltage. All the results for all models gets simplified to the
A. H. Seikh
Centre of Excellence for Research in Engineering Materials, Deanship of Scientific Research,
King Saud University, Riyadh 11421, Saudi Arabia
N. Alharthi
Department of Mechanical Engineering, College of Engineering, King Saud University, Riyadh
11421, Saudi Arabia
P. K. Bose
Department of Mechanical Engineering, Swami Vivekananda Institute of Science and
Technology, Dakshin Gobindapur Sonarpur, Kolkata, West Bengal 700145, India
K. P. Ghatak (B)
Department of Basic Science Institute of Engineering and Management, D-1, Management
House, Salt Lake, Sector-V, Kolkata, West Bengal 700091, India
e-mail: kamakhyaghatakcu@gmail.com
© Springer Nature Singapore Pte Ltd. 2020
A. Biswas et al. (eds.), Emerging Trends in Terahertz Solid-State Physics and Devices,
https://doi.org/10.1007/978-981-15-3235-1_7
85
of Quantum Wire Field-Effect
Transistors of Compound
Semiconductors
A. H. Seikh, N. Alharthi, P. K. Bose and K. P. Ghatak
Abstract This chapter explores the quantum capacitance (C g ) in quantum wire
field-effect transistors (QWFETs) manufactured from completely different technologically vital nonstandard materials by using all types of anisotropies of band
structures in addition to splitting of bands due to large fields of the crystals
inside the framework of Kane’s matrix methodology that successively generates
new 1D dimensional electron energy versus wave vector relation. We derive the C g
under very low temperature so that the Fermi function tends to unity for QWFETs
of Cd 3 As 2 , CdGeAs 2 , InSb, Hg 1−x Cd x Te, InAs, GaAs, In 1−x Ga x As y P 1−y IV–VI,
stressed materials,Te, GaP,PtSb 2 , Bi 2 Te 3 , Ge, GaSb and II–V compounds using the
appropriate band models. The C g becomes the functions of the thickness of the
quantum-confined transistors. The C g varies with varying film thickness in various
quantized steps and saw-tooth manners with different numerical values.
Keywords Quantum capacitance · Quantum wire field effect transistors ·
Compound semiconductors · Film thickness
The C g for the QWFETs of all the materials as considered here increases with increasing 1D electron statistics in step-like fashion and decreases in an oscillatory way
with the increasing gate voltage. All the results for all models gets simplified to the
A. H. Seikh
Centre of Excellence for Research in Engineering Materials, Deanship of Scientific Research,
King Saud University, Riyadh 11421, Saudi Arabia
N. Alharthi
Department of Mechanical Engineering, College of Engineering, King Saud University, Riyadh
11421, Saudi Arabia
P. K. Bose
Department of Mechanical Engineering, Swami Vivekananda Institute of Science and
Technology, Dakshin Gobindapur Sonarpur, Kolkata, West Bengal 700145, India
K. P. Ghatak (B)
Department of Basic Science Institute of Engineering and Management, D-1, Management
House, Salt Lake, Sector-V, Kolkata, West Bengal 700091, India
e-mail: kamakhyaghatakcu@gmail.com
© Springer Nature Singapore Pte Ltd. 2020
A. Biswas et al. (eds.), Emerging Trends in Terahertz Solid-State Physics and Devices,
https://doi.org/10.1007/978-981-15-3235-1_7
85