86
A. H. Seikh et al.
result of C g in QWFET having wide energy band gap materials subjected to various
constraints which exhibit the mathematical compatibility of our simplified theory.
1 Introduction
A carrier in semiconducting samples moves on the closed 3D wave vector (k) space
wherever the overall electron energy (E) is constant. The system spatiality will manufacture 1D electron motion once; these carriers are forced to move in one direction,
whereas the other two wave vector components assume quantized values. Hence,
the one-dimensional energy wave vector dispersion relations become straight lines
whose length decreases with the increase of the size quantum numbers leading to
quantization. The physical properties of such 1D system have been investigated in
the recent literature extensively [1–40]. Although many researchers had reported
their investigations in various forms, it seems that the study of other new aspects of
such 1D structure is becoming more and more necessary. One such important quantum quantity that in recent years generates substantial interest is that the quantum
capacitance (C g ) of quantum wire field-effect transistors (QWFET) which is biased
by a gate voltage creating a large surface field of force[41–44]. The 1D carrier statistics in such 1D layer will rather simply be varied by varying V g that, in turn, brings
an amendment of the electric field of force, the C g depends on the gate voltage. This
variation has been investigated for QWFETs of wide band gap materials shows few
necessary periodical characteristics of such devices. In this chapter, we shall study
the C g in QWFET of all the materials as stated in the abstract.
2 Theoretical Background
In QWFET, the C g can be expressed by the following equation
C g = e ¯
Dn s
(1)
where e is the electron charge, ¯
D =
∂
∂ V g
, V g is the gate voltage and n s is the 1D
electron statistics.
2.1 The C g in QWFET of Tetragonal Materials
The derivation of C g depends on n s and the same can be derived by using Heisenberg’s
scientific theory at low temperatures with the unit value of Fermi–Dirac function
without using the difficult DOS technique as used by us in [41] as
A. H. Seikh et al.
result of C g in QWFET having wide energy band gap materials subjected to various
constraints which exhibit the mathematical compatibility of our simplified theory.
1 Introduction
A carrier in semiconducting samples moves on the closed 3D wave vector (k) space
wherever the overall electron energy (E) is constant. The system spatiality will manufacture 1D electron motion once; these carriers are forced to move in one direction,
whereas the other two wave vector components assume quantized values. Hence,
the one-dimensional energy wave vector dispersion relations become straight lines
whose length decreases with the increase of the size quantum numbers leading to
quantization. The physical properties of such 1D system have been investigated in
the recent literature extensively [1–40]. Although many researchers had reported
their investigations in various forms, it seems that the study of other new aspects of
such 1D structure is becoming more and more necessary. One such important quantum quantity that in recent years generates substantial interest is that the quantum
capacitance (C g ) of quantum wire field-effect transistors (QWFET) which is biased
by a gate voltage creating a large surface field of force[41–44]. The 1D carrier statistics in such 1D layer will rather simply be varied by varying V g that, in turn, brings
an amendment of the electric field of force, the C g depends on the gate voltage. This
variation has been investigated for QWFETs of wide band gap materials shows few
necessary periodical characteristics of such devices. In this chapter, we shall study
the C g in QWFET of all the materials as stated in the abstract.
2 Theoretical Background
In QWFET, the C g can be expressed by the following equation
C g = e ¯
Dn s
(1)
where e is the electron charge, ¯
D =
∂
∂ V g
, V g is the gate voltage and n s is the 1D
electron statistics.
2.1 The C g in QWFET of Tetragonal Materials
The derivation of C g depends on n s and the same can be derived by using Heisenberg’s
scientific theory at low temperatures with the unit value of Fermi–Dirac function
without using the difficult DOS technique as used by us in [41] as