Analysis of InN-Based Surrounded Gate
Tunnel Field-Effect Transistor
for Terahertz Applications
Ritam Dutta and Nitai Paitya
Abstract The analysis of a proposed surrounded gate pocket intrinsic tunnel fieldeffect transistor (SG-PI-TFET) has been reported based on indium nitride (InN).
The device structure has been simulated and analyzed using TCAD device simulator taking non-local band-to-band tunneling (BTBT) into consideration. We have
accounted the fundamental limits of InN tunnel FET devices arising from the basic
material properties by numerical simulation and analytical calculations. The tunneling current is evaluated and the effects are analyzed with a change in different device
parameters to create the TFET design rule. The cut-off frequency (f t ) of the device
is found to be 0.45 THz which makes it appropriate for high-frequency applications.
Keywords Tunnel field-effect transistor (TFET) · SG-PI-TFET · Band-to-band
tunneling (BTBT) · InN · TCAD device simulator
1 Introduction
In the modern era, tunnel field-effect transistor (TFET) is contemplated as one of the
most promising contenders for low-power application post-CMOS logic devices to
overcome the short-channel effects (SCE) and reduced OFF current. TFETs operate
on the basis of quantum mechanical phenomenon of band-to-band tunneling (BTBT)
and possess excellent switching properties, and on the other side, TFETs suffer
from a low drive current (I ON ). So, various techniques to improve I ON in tunnel
FET have been reported [1–6]. With the advent of recent TFET research work, new
approaches emerged but the preferred channel material and geometry for the TFET
are still unresolved. To enhance the performance efficiency of tunnel FET devices,
device engineering has been carried out where III-N heterojunctions are forcing a
number of new insights in junction design and doping for low-power applications.
The possibility of indium nitride for high-speed electronic devices is thoroughly
documented [7, 8].
R. Dutta · N. Paitya (B)
Department of Electronics and Communication Engineering, Sikkim Manipal Institute of
Technology, Sikkim Manipal University, Gangtok, Sikkim 737136, India
e-mail: nitai.p@smit.smu.edu.in
© Springer Nature Singapore Pte Ltd. 2020
A. Biswas et al. (eds.), Emerging Trends in Terahertz Solid-State Physics and Devices,
https://doi.org/10.1007/978-981-15-3235-1_6
77
Tunnel Field-Effect Transistor
for Terahertz Applications
Ritam Dutta and Nitai Paitya
Abstract The analysis of a proposed surrounded gate pocket intrinsic tunnel fieldeffect transistor (SG-PI-TFET) has been reported based on indium nitride (InN).
The device structure has been simulated and analyzed using TCAD device simulator taking non-local band-to-band tunneling (BTBT) into consideration. We have
accounted the fundamental limits of InN tunnel FET devices arising from the basic
material properties by numerical simulation and analytical calculations. The tunneling current is evaluated and the effects are analyzed with a change in different device
parameters to create the TFET design rule. The cut-off frequency (f t ) of the device
is found to be 0.45 THz which makes it appropriate for high-frequency applications.
Keywords Tunnel field-effect transistor (TFET) · SG-PI-TFET · Band-to-band
tunneling (BTBT) · InN · TCAD device simulator
1 Introduction
In the modern era, tunnel field-effect transistor (TFET) is contemplated as one of the
most promising contenders for low-power application post-CMOS logic devices to
overcome the short-channel effects (SCE) and reduced OFF current. TFETs operate
on the basis of quantum mechanical phenomenon of band-to-band tunneling (BTBT)
and possess excellent switching properties, and on the other side, TFETs suffer
from a low drive current (I ON ). So, various techniques to improve I ON in tunnel
FET have been reported [1–6]. With the advent of recent TFET research work, new
approaches emerged but the preferred channel material and geometry for the TFET
are still unresolved. To enhance the performance efficiency of tunnel FET devices,
device engineering has been carried out where III-N heterojunctions are forcing a
number of new insights in junction design and doping for low-power applications.
The possibility of indium nitride for high-speed electronic devices is thoroughly
documented [7, 8].
R. Dutta · N. Paitya (B)
Department of Electronics and Communication Engineering, Sikkim Manipal Institute of
Technology, Sikkim Manipal University, Gangtok, Sikkim 737136, India
e-mail: nitai.p@smit.smu.edu.in
© Springer Nature Singapore Pte Ltd. 2020
A. Biswas et al. (eds.), Emerging Trends in Terahertz Solid-State Physics and Devices,
https://doi.org/10.1007/978-981-15-3235-1_6
77