Potentiality of Impact Avalanche Transit Time Diode …
75
13. Electronic archive: New semiconductor materials, characteristics and properties. http://www.
ioffe.ru/SVA/NSM/Semicond
14. D.N. Datta, S.P. Pati, J.P. Banerjee, B.B. Pal, S.K. Roy, Computer analysis of DC field and
current density profiles of DAR impatt diode. IEEE Trans. Electron. Devices 29(11), 1813–1816
(1982)
15. S.K. Roy, M. Sridharan, R. Ghosh, B.B. Pal, Computer method for the DC field and carrier current profiles in the field extremum in the depletion layer (NASECODEI Proc, Dublin (Ireland),
1982), pp. 266–274
16. G.C. Ghivela, J. Sengupta, Prospects of impact avalanche transit-time diode based on chemicalvapor-deposited diamond substrate. J. Electron. Mater. 48(2), 1044–1053 (2019)
17. G.C. Ghivela, J. Sengupta, M. Mitra, Space charge effect of IMPATT diode using Si, Ge, GaAs,
InP, WzGaN, 4H-SiC at Ka band. IETE J. Edu. 58(2), 61–66 (2017)
18. G.C. Ghivela, J. Sengupta, Estimation of power density in IMPATT using different materials.
Inter. J. Electron. https://doi.org/10.1080/00207217.2019.1672810
19. J. Sengupta, G.C. Ghivela, A. Gajbhiye, M. Mitra, Measurement of noise and efficiency of
4H-SiC Impatt diode at Ka band. Int. J. Electron. Lett. 4(2), 134–140 (2016)
20. G.C. Ghivela, J. Sengupta, M. Mitra, Ka band noise comparison for Si, Ge, GaAs, InP, WzGaN,
4H-SiC based IMPATT diode. Int. J. Electron. Lett. 7(1), 107–116 (2019)
21. G.C. Ghivela, J. Sengupta, Noise performance of avalanche transit–time devices in the presence
of acoustic phonons. J. Comput. Electron. 18(1), 222–230 (2019)
22. G.C. Ghivela, J. Sengupta, Modeling and computation of double drift region transit time diode
performance based on graphene-SiC. Int. J. Numer. Model 32(5), 01–11 (2019)
23. G.C. Ghivela, J. Sengupta, Effect of acoustic phonon scattering on impact ionization rate of
electrons in monolayer graphene nanoribbons. Appl. Phys. A 124(762), 01–08 (2018)
24. G.C. Ghivela, J. Sengupta, M. Mitra, Quantum corrected drift diffusion based noise model for
impact avalanche and transit time diode. Superlattices Microstruct. 128, 402–407 (2019)
25. P. Banerjee, A. Acharyya, A. Biswas, A.K. Bhattacharjee, Effect of magnetic field on the RF
performance of millimeter-wave IMPATT source. J. Comput. Electron. 15(1), 210–221 (2016)
26. P.K. Bandyopadhyay, S. Chakraborty, A. Biswas, A. Acharyya, A.K. Bhattacharjee, Largesignal characterization of millimeter-wave IMPATTs: effect of reduced impact ionization rate
of charge carriers due to carrier-carrier interactions. J. Comput. Electron. 15(2), 646–656 (2016)
27. P.K. Bandyopadhyay, A. Biswas, A.K. Bhattacharjee, A. Acharyya, Influence of carrier–carrier
interactions on the noise performance of millimeter-wave IMPATTs. IETE J. Res. (2018).
https://doi.org/10.1080/03772063.2018.1433078
28. A. Biswas, S. Sinha, A. Acharyya, A. Banerjee, S. Pal, H. Satoh, H. Inokawa, 1.0 THz GaN
IMPATT source: Effect of parasitic series resistance. J. Infrared Millim. Terahertz Waves
39(10), 954–974 (2018)
75
13. Electronic archive: New semiconductor materials, characteristics and properties. http://www.
ioffe.ru/SVA/NSM/Semicond
14. D.N. Datta, S.P. Pati, J.P. Banerjee, B.B. Pal, S.K. Roy, Computer analysis of DC field and
current density profiles of DAR impatt diode. IEEE Trans. Electron. Devices 29(11), 1813–1816
(1982)
15. S.K. Roy, M. Sridharan, R. Ghosh, B.B. Pal, Computer method for the DC field and carrier current profiles in the field extremum in the depletion layer (NASECODEI Proc, Dublin (Ireland),
1982), pp. 266–274
16. G.C. Ghivela, J. Sengupta, Prospects of impact avalanche transit-time diode based on chemicalvapor-deposited diamond substrate. J. Electron. Mater. 48(2), 1044–1053 (2019)
17. G.C. Ghivela, J. Sengupta, M. Mitra, Space charge effect of IMPATT diode using Si, Ge, GaAs,
InP, WzGaN, 4H-SiC at Ka band. IETE J. Edu. 58(2), 61–66 (2017)
18. G.C. Ghivela, J. Sengupta, Estimation of power density in IMPATT using different materials.
Inter. J. Electron. https://doi.org/10.1080/00207217.2019.1672810
19. J. Sengupta, G.C. Ghivela, A. Gajbhiye, M. Mitra, Measurement of noise and efficiency of
4H-SiC Impatt diode at Ka band. Int. J. Electron. Lett. 4(2), 134–140 (2016)
20. G.C. Ghivela, J. Sengupta, M. Mitra, Ka band noise comparison for Si, Ge, GaAs, InP, WzGaN,
4H-SiC based IMPATT diode. Int. J. Electron. Lett. 7(1), 107–116 (2019)
21. G.C. Ghivela, J. Sengupta, Noise performance of avalanche transit–time devices in the presence
of acoustic phonons. J. Comput. Electron. 18(1), 222–230 (2019)
22. G.C. Ghivela, J. Sengupta, Modeling and computation of double drift region transit time diode
performance based on graphene-SiC. Int. J. Numer. Model 32(5), 01–11 (2019)
23. G.C. Ghivela, J. Sengupta, Effect of acoustic phonon scattering on impact ionization rate of
electrons in monolayer graphene nanoribbons. Appl. Phys. A 124(762), 01–08 (2018)
24. G.C. Ghivela, J. Sengupta, M. Mitra, Quantum corrected drift diffusion based noise model for
impact avalanche and transit time diode. Superlattices Microstruct. 128, 402–407 (2019)
25. P. Banerjee, A. Acharyya, A. Biswas, A.K. Bhattacharjee, Effect of magnetic field on the RF
performance of millimeter-wave IMPATT source. J. Comput. Electron. 15(1), 210–221 (2016)
26. P.K. Bandyopadhyay, S. Chakraborty, A. Biswas, A. Acharyya, A.K. Bhattacharjee, Largesignal characterization of millimeter-wave IMPATTs: effect of reduced impact ionization rate
of charge carriers due to carrier-carrier interactions. J. Comput. Electron. 15(2), 646–656 (2016)
27. P.K. Bandyopadhyay, A. Biswas, A.K. Bhattacharjee, A. Acharyya, Influence of carrier–carrier
interactions on the noise performance of millimeter-wave IMPATTs. IETE J. Res. (2018).
https://doi.org/10.1080/03772063.2018.1433078
28. A. Biswas, S. Sinha, A. Acharyya, A. Banerjee, S. Pal, H. Satoh, H. Inokawa, 1.0 THz GaN
IMPATT source: Effect of parasitic series resistance. J. Infrared Millim. Terahertz Waves
39(10), 954–974 (2018)