74
G. C. Ghivela et al.
Table 3 Computed resonant frequency
f (in THz) Si
Ge
WzGaN
GaAs
InP
ω r (×10 7
rad/s)
ω r (×10 7
rad/s)
ω r (×10 7
rad/s)
ω r (×10 7
rad/s)
ω r (×10 7
rad/s)
0.094
9.51
7.352
9.52
4.556
0.851
01
9.36
7.227
8.03
4.474
0.82
02
8.588
7.07
7.662
4.18
0.776
04
8.071
6.775
7.452
4.007
0.592
06
7.418
6.177
7.01
3.774
0.46
08
7.037
6.009
7.75
3.579
0.397
10
6.816
5.611
7.37
3.447
0.353
12
6.613
5.413
7.12
3.291
0.313
14
6.434
5.2
6.928
3.070
0.267
16
6.184
4.776
6.675
2.856
0.202
18
6.033
4.617
6.356
2.732
0.164
20
5.882
4.455
5.129
2.544
0.149
22
6.04
4.5
5.054
2.612
0.165
24
6.019
4.5
5.012
2.666
0.169
26
5.895
4.516
4.96
2.697
0.155
28
5.872
4.614
4.851
2.739
0.151
30
5.859
4.674
4.803
2.78
0.718
References
1. T.A. Midford, R.L. Bernick, Millimeter wave CW IMPATT diodes and oscillators. IEEE Trans.
Microw. Theory Tech. 27(5), 483–492 (1979)
2. D. Ke-Lin, M.N.S. Swamy, Wireless Communication Systems: From RF Subsystems to 4G
Enabling Technologies (Cambridge University Press, Cambridge, 2010), pp. 416–417
3. J.H. Chris, S.R. Balmer, Diamond as an electronic material. Mater. Today 11, 22–28 (2008)
4. W.T. Read, A proposed high-frequency negative-resistance diode. Bell Syst. Tech. J. 37(2),
401–446 (1958)
5. R.L. Johnston, B.C. De Loach Jr., B.G. Cohen, A silicon diode microwave oscillator. Bell Syst.
Tech. J. 44(2), 369–372 (1965)
6. C.A. Lee, R.L. Batdorf, W. Wiegmann, G. Kaminski, The read diode-an avalanching, transittime, negative resistance oscillator. Appl. Phys. Lett. 6(5), 89–91 (1965)
7. S.M. Sze, K.K. Ng, Physics of Semiconductor Devices (Wiley, New Jersey, 2007), pp. 466–488
8. W. Shockley, Negative resistance arising from transit time in semiconductor diode. Bell Syst.
Tech. J. 33(4), 799–826 (1954)
9. B.C. DeLoach Jr., The IMPATT story. IEEE Trans. Electron. Dev. 23(7), 657–660 (1976)
10. T. Misawa, Negative resistance in p-n junction under avalanche breakdown conditions, part I.
IEEE Trans. Electron. Dev. 13(1), 137–143 (1966)
11. T. Misawa, Negative resistance in p-n junction under avalanche breakdown conditions, part II.
IEEE Trans. Electron. Dev. 13(1), 143–151 (1966)
12. M. Gilden, M.E. Hines, Electronic tuning effects in the read microwave avalanche diode. IEEE
Trans. Electron. Dev. 13(1), 169–175 (1966)
G. C. Ghivela et al.
Table 3 Computed resonant frequency
f (in THz) Si
Ge
WzGaN
GaAs
InP
ω r (×10 7
rad/s)
ω r (×10 7
rad/s)
ω r (×10 7
rad/s)
ω r (×10 7
rad/s)
ω r (×10 7
rad/s)
0.094
9.51
7.352
9.52
4.556
0.851
01
9.36
7.227
8.03
4.474
0.82
02
8.588
7.07
7.662
4.18
0.776
04
8.071
6.775
7.452
4.007
0.592
06
7.418
6.177
7.01
3.774
0.46
08
7.037
6.009
7.75
3.579
0.397
10
6.816
5.611
7.37
3.447
0.353
12
6.613
5.413
7.12
3.291
0.313
14
6.434
5.2
6.928
3.070
0.267
16
6.184
4.776
6.675
2.856
0.202
18
6.033
4.617
6.356
2.732
0.164
20
5.882
4.455
5.129
2.544
0.149
22
6.04
4.5
5.054
2.612
0.165
24
6.019
4.5
5.012
2.666
0.169
26
5.895
4.516
4.96
2.697
0.155
28
5.872
4.614
4.851
2.739
0.151
30
5.859
4.674
4.803
2.78
0.718
References
1. T.A. Midford, R.L. Bernick, Millimeter wave CW IMPATT diodes and oscillators. IEEE Trans.
Microw. Theory Tech. 27(5), 483–492 (1979)
2. D. Ke-Lin, M.N.S. Swamy, Wireless Communication Systems: From RF Subsystems to 4G
Enabling Technologies (Cambridge University Press, Cambridge, 2010), pp. 416–417
3. J.H. Chris, S.R. Balmer, Diamond as an electronic material. Mater. Today 11, 22–28 (2008)
4. W.T. Read, A proposed high-frequency negative-resistance diode. Bell Syst. Tech. J. 37(2),
401–446 (1958)
5. R.L. Johnston, B.C. De Loach Jr., B.G. Cohen, A silicon diode microwave oscillator. Bell Syst.
Tech. J. 44(2), 369–372 (1965)
6. C.A. Lee, R.L. Batdorf, W. Wiegmann, G. Kaminski, The read diode-an avalanching, transittime, negative resistance oscillator. Appl. Phys. Lett. 6(5), 89–91 (1965)
7. S.M. Sze, K.K. Ng, Physics of Semiconductor Devices (Wiley, New Jersey, 2007), pp. 466–488
8. W. Shockley, Negative resistance arising from transit time in semiconductor diode. Bell Syst.
Tech. J. 33(4), 799–826 (1954)
9. B.C. DeLoach Jr., The IMPATT story. IEEE Trans. Electron. Dev. 23(7), 657–660 (1976)
10. T. Misawa, Negative resistance in p-n junction under avalanche breakdown conditions, part I.
IEEE Trans. Electron. Dev. 13(1), 137–143 (1966)
11. T. Misawa, Negative resistance in p-n junction under avalanche breakdown conditions, part II.
IEEE Trans. Electron. Dev. 13(1), 143–151 (1966)
12. M. Gilden, M.E. Hines, Electronic tuning effects in the read microwave avalanche diode. IEEE
Trans. Electron. Dev. 13(1), 169–175 (1966)