Potentiality of Impact Avalanche Transit Time Diode …
71
Fig. 4 Avalanche response time as a function of frequency
as compared to its Si, Ge, WzGaN and GaAs counterparts. From the obtained results,
it can be understood that though WzGaN and Si have higher drift response time, still
those values are close to that of others.
3.3 Drift Capacitance and Resonant Frequency
In the THz band frequencies, drift capacitance and resonant frequency in IMPATT
are computed and listed in Tables 2 and 3. The drift capacitance is increasing with
frequency for all the materials. Ge-based IMPATT has higher drift capacitance variation from 0.0685 to 0.1113 F, and its WzGaN counterpart is having lower variation
from 0.0061 to 0.0142 F. InP is having lower resonant frequencies as compared to
71
Fig. 4 Avalanche response time as a function of frequency
as compared to its Si, Ge, WzGaN and GaAs counterparts. From the obtained results,
it can be understood that though WzGaN and Si have higher drift response time, still
those values are close to that of others.
3.3 Drift Capacitance and Resonant Frequency
In the THz band frequencies, drift capacitance and resonant frequency in IMPATT
are computed and listed in Tables 2 and 3. The drift capacitance is increasing with
frequency for all the materials. Ge-based IMPATT has higher drift capacitance variation from 0.0685 to 0.1113 F, and its WzGaN counterpart is having lower variation
from 0.0061 to 0.0142 F. InP is having lower resonant frequencies as compared to