72
G. C. Ghivela et al.
Fig. 5 Dependency of drift response time on frequency
others at the corresponding frequencies. From these variations of drift capacitance,
we can get an idea about the time constant of the device.
4 Conclusion
Maximum conversion efficiencies are obtained from the InP-based IMPATT as compared to Si, Ge, GaAs and WzGaN at the THz band of 0.094–30 THz. Since no
experimental results are available based on response time determination, inductance
and capacitance profiles measurement and efficiency calculation over the entire frequency range of THz band for all the materials, no comparison could be made.
However, these results can be helpful for the practical realization of IMPATT and
to improve the IMPATT performance based on doping, avalanche and drift widths
selection with proper semiconducting material.
G. C. Ghivela et al.
Fig. 5 Dependency of drift response time on frequency
others at the corresponding frequencies. From these variations of drift capacitance,
we can get an idea about the time constant of the device.
4 Conclusion
Maximum conversion efficiencies are obtained from the InP-based IMPATT as compared to Si, Ge, GaAs and WzGaN at the THz band of 0.094–30 THz. Since no
experimental results are available based on response time determination, inductance
and capacitance profiles measurement and efficiency calculation over the entire frequency range of THz band for all the materials, no comparison could be made.
However, these results can be helpful for the practical realization of IMPATT and
to improve the IMPATT performance based on doping, avalanche and drift widths
selection with proper semiconducting material.