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Mishra, Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced
activation annealing temperature
40. F. Recht, L. McCarthy, L. Shen, C. Poblenz, A. Corrion, J.S. Speck, U.K. Mishra, AlGaN/GaN
HEMTs with large angle implanted nonalloyed ohmic contacts, in 2007 65th Annual Device
Research Conference, IEEE, 18 June 2007, pp. 37–38
41. X.C. Fu, Y. Lv, L.J. Zhang, T. Zhang, X.J. Li, X. Song, Z. Zhang, Y. Fang, Z. Feng, Highfrequency InAlN/GaN HFET with f max over 400 GHz. Electron. Lett. 54(12), 783–785 (2018)
42. M. Dyakonov, M. Shur, Shallow water analogy for a ballistic field effect transistor: new
mechanism of plasma wave generation by dc current. Phys. Rev. Lett. 71(15), 2465 (1993)
43. W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M.
Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, Field effect transistors for terahertz detection:
Physics and first imaging applications. J. Infrared Millim. Terahertz Waves 30(12), 1319–1337
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44. F. Friederich, W. Von Spiegel, M. Bauer, F. Meng, M.D. Thomson, S. Boppel, A. Lisauskas,
B. Hils, V. Krozer, A. Keil, T. Loffler, THz active imaging systems with real-time capabilities.
IEEE Trans. Terahertz Sci. Technol 1(1), 183–200 (2011)
45. J.D. Sun, Y.F. Sun, D.M. Wu, Y. Cai, H. Qin, B.S. Zhang, High-responsivity, low-noise, roomtemperature, self-mixing terahertz detector realized using floating antennas on a GaN-based
field-effect transistor. Appl. Phys. Lett. 100(1), 013506 (2012)
46. J.D. Sun, H. Qin, R.A. Lewis, Y.F. Sun, X.Y. Zhang, Y. Cai, D.M. Wu, B.S. Zhang, Probing
and modelling the localized self-mixing in a GaN/AlGaN field-effect terahertz detector. Appl.
Phys. Lett. 100(17), 173513 (2012)
47. A. Lisauskas, M. Bauer, S. Boppel, M. Mundt, B. Khamaisi, E. Socher, R. Venckeviˇ cius, L.
Minkeviˇ cius, I. Kašalynas, D. Seliuta, G. Valušis, Exploration of terahertz imaging with silicon
MOSFETs. J. Infrared Millim. Terahertz Waves 35(1), 63–80 (2014)
48. H. Hou, Z. Liu, J.H. Teng, T. Palacio, S.J. Chua, Modelling of GaN HEMTs as terahertz
detectors based on self-mixing. Proc. Eng. 1(141), 98–102 (2016)
49. Q. Li, N. An, Y. Tang, J. Jiang, L. Li, J. Zeng, W. Tan, Metal-semiconductor-metal (MSM)
varactor based on AlGaN/GaN heterostructure with cutoff frequency of 914.5 GHz for terahertz
frequency multiplication, in 2018 IEEE 3rd International Conference on Integrated Circuits
and Microsystems (ICICM), IEEE, 24 Nov 2018, pp. 86–89
50. M. Bauer, A. Rämer, S.A. Chevtchenko, K. Osipov, D. ˇ
Cibirait˙ e, S. Pralgauskaité, K. Ikamas,
A. Lisauskas, W. Heinrich, V. Krozer, H.G. Roskos, A high-sensitivity AlGaN/GaN HEMT terahertz detector with integrated broadband bow-tie antenna. IEEE Trans. Terahertz Sci. Technol.
(2019)
51. M. Higashiwaki, G.H. Jessen, Guest editorial: the dawn of gallium oxide microelectronics.
Appl. Phys. Lett. 112(6), 060401. https://doi.org/10.1063/1.5017845
52. S.J. Pearton, F. Ren, M. Tadjer, J. Kim, Perspective: Ga 2 O 3 for ultra-high power rectifiers and
MOSFETS. J. Appl. Phys. 124(22), 220901 (2018)
53. J. Yang, F. Ren, M. Tadjer, S.J. Pearton, A. Kuramata, Ga 2 O 3 Schottky rectifiers with 1 ampere
forward current, 650 V reverse breakdown and 26.5 MW cm −2 figure-of-merit. AIP Advances
8(5), 055026 (2018)
54. H. Dong, H. Xue, Q. He, Y. Qin, G. Jian, S. Long, M. Liu, Progress of power field effect
transistor based on ultra-wide bandgap Ga 2 O 3 semiconductor material. J. Semiconductors
40(1), 011802 (2019)
55. A.J. Green, K.D. Chabak, M. Baldini, N. Moser, R. Gilbert, R.C. Fitch, G. Wagner, Z. Galazka,
J. Mccandless, A. Crespo, K. Leedy, β-Ga 2 O 3 MOSFETs for radio frequency operation. IEEE
Electron Device Lett. 38(6), 790–793 (2017)
56. G. Jessen, K. Chabak, A. Green, N. Moser, J. McCandless, K. Leedy, A. Crespo, S. Tetlak, Gallium oxide technologies and applications, in 2017 IEEE Compound Semiconductor Integrated
Circuit Symposium (CSICS), IEEE, 22 Oct 2017, pp. 1–4
57. M. Singh, M.A. Casbon, M.J. Uren, J.W. Pomeroy, S. Dalcanale, S. Karboyan, P.J. Tasker,
M.H. Wong, K. Sasaki, A. Kuramata, S. Yamakoshi, Pulsed large signal RF performance of
field-plated Ga 2 O 3 MOSFETs. IEEE Electron Device Lett. 39(10), 1572–1575 (2018)
R. Singh et al.
39. F. Recht, L. McCarthy, S. Rajan, A. Chakraborty, C. Poblenz, A. Corrion, J.S. Speck, U.K.
Mishra, Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced
activation annealing temperature
40. F. Recht, L. McCarthy, L. Shen, C. Poblenz, A. Corrion, J.S. Speck, U.K. Mishra, AlGaN/GaN
HEMTs with large angle implanted nonalloyed ohmic contacts, in 2007 65th Annual Device
Research Conference, IEEE, 18 June 2007, pp. 37–38
41. X.C. Fu, Y. Lv, L.J. Zhang, T. Zhang, X.J. Li, X. Song, Z. Zhang, Y. Fang, Z. Feng, Highfrequency InAlN/GaN HFET with f max over 400 GHz. Electron. Lett. 54(12), 783–785 (2018)
42. M. Dyakonov, M. Shur, Shallow water analogy for a ballistic field effect transistor: new
mechanism of plasma wave generation by dc current. Phys. Rev. Lett. 71(15), 2465 (1993)
43. W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M.
Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, Field effect transistors for terahertz detection:
Physics and first imaging applications. J. Infrared Millim. Terahertz Waves 30(12), 1319–1337
(2009)
44. F. Friederich, W. Von Spiegel, M. Bauer, F. Meng, M.D. Thomson, S. Boppel, A. Lisauskas,
B. Hils, V. Krozer, A. Keil, T. Loffler, THz active imaging systems with real-time capabilities.
IEEE Trans. Terahertz Sci. Technol 1(1), 183–200 (2011)
45. J.D. Sun, Y.F. Sun, D.M. Wu, Y. Cai, H. Qin, B.S. Zhang, High-responsivity, low-noise, roomtemperature, self-mixing terahertz detector realized using floating antennas on a GaN-based
field-effect transistor. Appl. Phys. Lett. 100(1), 013506 (2012)
46. J.D. Sun, H. Qin, R.A. Lewis, Y.F. Sun, X.Y. Zhang, Y. Cai, D.M. Wu, B.S. Zhang, Probing
and modelling the localized self-mixing in a GaN/AlGaN field-effect terahertz detector. Appl.
Phys. Lett. 100(17), 173513 (2012)
47. A. Lisauskas, M. Bauer, S. Boppel, M. Mundt, B. Khamaisi, E. Socher, R. Venckeviˇ cius, L.
Minkeviˇ cius, I. Kašalynas, D. Seliuta, G. Valušis, Exploration of terahertz imaging with silicon
MOSFETs. J. Infrared Millim. Terahertz Waves 35(1), 63–80 (2014)
48. H. Hou, Z. Liu, J.H. Teng, T. Palacio, S.J. Chua, Modelling of GaN HEMTs as terahertz
detectors based on self-mixing. Proc. Eng. 1(141), 98–102 (2016)
49. Q. Li, N. An, Y. Tang, J. Jiang, L. Li, J. Zeng, W. Tan, Metal-semiconductor-metal (MSM)
varactor based on AlGaN/GaN heterostructure with cutoff frequency of 914.5 GHz for terahertz
frequency multiplication, in 2018 IEEE 3rd International Conference on Integrated Circuits
and Microsystems (ICICM), IEEE, 24 Nov 2018, pp. 86–89
50. M. Bauer, A. Rämer, S.A. Chevtchenko, K. Osipov, D. ˇ
Cibirait˙ e, S. Pralgauskaité, K. Ikamas,
A. Lisauskas, W. Heinrich, V. Krozer, H.G. Roskos, A high-sensitivity AlGaN/GaN HEMT terahertz detector with integrated broadband bow-tie antenna. IEEE Trans. Terahertz Sci. Technol.
(2019)
51. M. Higashiwaki, G.H. Jessen, Guest editorial: the dawn of gallium oxide microelectronics.
Appl. Phys. Lett. 112(6), 060401. https://doi.org/10.1063/1.5017845
52. S.J. Pearton, F. Ren, M. Tadjer, J. Kim, Perspective: Ga 2 O 3 for ultra-high power rectifiers and
MOSFETS. J. Appl. Phys. 124(22), 220901 (2018)
53. J. Yang, F. Ren, M. Tadjer, S.J. Pearton, A. Kuramata, Ga 2 O 3 Schottky rectifiers with 1 ampere
forward current, 650 V reverse breakdown and 26.5 MW cm −2 figure-of-merit. AIP Advances
8(5), 055026 (2018)
54. H. Dong, H. Xue, Q. He, Y. Qin, G. Jian, S. Long, M. Liu, Progress of power field effect
transistor based on ultra-wide bandgap Ga 2 O 3 semiconductor material. J. Semiconductors
40(1), 011802 (2019)
55. A.J. Green, K.D. Chabak, M. Baldini, N. Moser, R. Gilbert, R.C. Fitch, G. Wagner, Z. Galazka,
J. Mccandless, A. Crespo, K. Leedy, β-Ga 2 O 3 MOSFETs for radio frequency operation. IEEE
Electron Device Lett. 38(6), 790–793 (2017)
56. G. Jessen, K. Chabak, A. Green, N. Moser, J. McCandless, K. Leedy, A. Crespo, S. Tetlak, Gallium oxide technologies and applications, in 2017 IEEE Compound Semiconductor Integrated
Circuit Symposium (CSICS), IEEE, 22 Oct 2017, pp. 1–4
57. M. Singh, M.A. Casbon, M.J. Uren, J.W. Pomeroy, S. Dalcanale, S. Karboyan, P.J. Tasker,
M.H. Wong, K. Sasaki, A. Kuramata, S. Yamakoshi, Pulsed large signal RF performance of
field-plated Ga 2 O 3 MOSFETs. IEEE Electron Device Lett. 39(10), 1572–1575 (2018)