RF Performance of Ultra-wide Band Gap HEMTs
63
58. M.D. Santia, N. Tandon, J.D. Albrecht, Lattice thermal conductivity in β-Ga 2 O 3 from first
principles. Appl. Phys. Lett. 107(4), 041907 (2015)
59. S. Kumar, R. Soman, A.S. Pratiyush, R. Muralidharan, D.N. Nath, A performance comparison
between β-Ga 2 O 3 and GaN HEMTs. IEEE Trans. Electron Devices 66(8), 3310–3317 (2019)
60. R. Gaska, J.W. Yang, A. Osinsky, Q. Chen, M.A. Khan, A.O. Orlov, G.L. Snider, M.S. Shur,
Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates. Appl. Phys.
Lett. 72(6), 707–709 (1998)
61. L. Ardaraviˇ cius, A. Matulionis, J. Liberis, O. Kiprijanovic, M. Ramonas, L.F. Eastman, J.R
Shealy, A. Vertiatchik, Electron drift velocity in AlGaN/GaN channel at high electric fields.
Appl. Phys. Lett. 83(19) (2003) 4038–4040; F. Medjdoub, Gallium nitride (GaN): Physics,
devices, and technology. CRC Press (2015)
62. Y. Kang, K. Krishnaswamy, H. Peelaers, C.G. Van de Walle, Fundamental limits on the electron
mobility of β-Ga2O3. J. Phys. Condens. Matter 29(23), 234001 (2017)
63. K. Ghosh, U. Singisetti, Ab initio velocity-field curves in monoclinic β-Ga 2 O 3 . J. Appl. Phys.
122(3), 035702 (2017)
64. Y. Zhang, Z. Xia, J. Mcglone, W. Sun, C. Joishi, A.R. Arehart, S.A. Ringel, S. Rajan, Evaluation
of low-temperature saturation velocity in β-(Al x Ga 1–x ) 2 O 3 /Ga 2 O 3 modulation-doped fieldeffect transistors. IEEE Trans. Electron Devices 66(3), 1574–1578 (2019)
63
58. M.D. Santia, N. Tandon, J.D. Albrecht, Lattice thermal conductivity in β-Ga 2 O 3 from first
principles. Appl. Phys. Lett. 107(4), 041907 (2015)
59. S. Kumar, R. Soman, A.S. Pratiyush, R. Muralidharan, D.N. Nath, A performance comparison
between β-Ga 2 O 3 and GaN HEMTs. IEEE Trans. Electron Devices 66(8), 3310–3317 (2019)
60. R. Gaska, J.W. Yang, A. Osinsky, Q. Chen, M.A. Khan, A.O. Orlov, G.L. Snider, M.S. Shur,
Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates. Appl. Phys.
Lett. 72(6), 707–709 (1998)
61. L. Ardaraviˇ cius, A. Matulionis, J. Liberis, O. Kiprijanovic, M. Ramonas, L.F. Eastman, J.R
Shealy, A. Vertiatchik, Electron drift velocity in AlGaN/GaN channel at high electric fields.
Appl. Phys. Lett. 83(19) (2003) 4038–4040; F. Medjdoub, Gallium nitride (GaN): Physics,
devices, and technology. CRC Press (2015)
62. Y. Kang, K. Krishnaswamy, H. Peelaers, C.G. Van de Walle, Fundamental limits on the electron
mobility of β-Ga2O3. J. Phys. Condens. Matter 29(23), 234001 (2017)
63. K. Ghosh, U. Singisetti, Ab initio velocity-field curves in monoclinic β-Ga 2 O 3 . J. Appl. Phys.
122(3), 035702 (2017)
64. Y. Zhang, Z. Xia, J. Mcglone, W. Sun, C. Joishi, A.R. Arehart, S.A. Ringel, S. Rajan, Evaluation
of low-temperature saturation velocity in β-(Al x Ga 1–x ) 2 O 3 /Ga 2 O 3 modulation-doped fieldeffect transistors. IEEE Trans. Electron Devices 66(3), 1574–1578 (2019)