RF Performance of Ultra-wide Band Gap HEMTs
61
21. W.L. Pribble, J.W. Palmour, S.T. Sheppard, R.P. Smith, S.T. Allen, T.J. Smith, Z. Ring, J.J.
Sumakeris, A.W. Saxler, J.W. Milligan, Applications of SiC MESFETs and GaN HEMTs in
power amplifier design, in 2002 IEEE MTT-S International Microwave Symposium Digest (Cat.
No. 02CH37278), IEEE, vol. 3, 2 June 2002, pp. 1819–1822
22. Y.F. Wu, A. Saxler, M. Moore, R.P. Smith, S. Sheppard, P.M. Chavarkar, T. Wisleder, U.K.
Mishra, P. Parikh, 30-W/mm GaN HEMTs by field plate optimization. IEEE Electron Device
Lett. 25(3), 117–119 (2004)
23. Y. Okamoto, Y. Ando, K. Hataya, T. Nakayama, H. Miyamoto, T. Inoue, M. Senda, K. Hirata,
M. Kosaki, N. Shibata, M. Kuzuhara, A 149 W recessed-gate AlGaN/GaN FP-FET, in 2004
IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No. 04CH37535), IEEE,
vol. 3, 6 June 2004, pp. 1351–1354
24. Y.F. Wu, M. Moore, A. Saxler, T. Wisleder, P. Parikh, 40-W/mm double field-plated GaN
HEMTs, in 2006 64th Device Research Conference, IEEE, 26 June 2006, pp. 151–152
25. M.Y. Kao, C. Lee, R. Hajji, P. Saunier, H.Q. Tserng, AlGaN/GaN HEMTs with PAE of 53% at
35 GHz for HPA and multi-function MMIC applications, in 2007 IEEE/MTT-S International
Microwave Symposium, IEEE, 3 June 2007, pp. 627–629
26. Y. Murase, A. Wakejima, T. Inoue, K. Yamanoguchi, M. Tanomura, T. Nakayama, Y. Okamoto,
K. Ota, Y. Ando, N. Kuroda, K. Matsunaga, CW 20-W AlGaN/GaN FET power amplifier
for quasi-millimeter wave applications, in 2007 IEEE Compound Semiconductor Integrated
Circuits Symposium, IEEE, 14 Oct 2007, pp. 1–4
27. D.C. Dumka, T.M. Chou, F. Faili, D. Francis, F. Ejeckam, AlGaN/GaN HEMTs on diamond
substrate with over 7 W/mm output power density at 10 GHz. Electron. Lett. 49(20), 1298–1299
(2013)
28. P.C. Chao, K. Chu, J. Diaz, C. Creamer, S. Sweetland, R. Kallaher, C. McGray, G.D. Via, J.
Blevins, GaN-on-diamond HEMTs with 11 W/mm output power at 10GHz. MRS Advances
1(2), 147–155 (2016)
29. M. Micovic, D.F. Brown, D. Regan, J. Wong, Y. Tang, F. Herrault, D. Santos, S.D. Burnham,
J. Tai, E. Prophet, I. Khalaf, High frequency GaN HEMTs for RF MMIC applications, in 2016
IEEE International Electron Devices Meeting (IEDM), IEEE, 3 Dec 2016, pp. 3–3
30. B. Romanczyk, S. Wienecke, M. Guidry, H. Li, E. Ahmadi, X. Zheng, S. Keller, U.K. Mishra,
Demonstration of constant 8 W/mm power density at 10, 30, and 94 GHz in state-of-the-art
millimeter-wave N-polar GaN MISHEMTs. IEEE Trans. Electron Devices 65(1), 45–50 (2017)
31. Y. Lu, X. Ma, L. Yang, B. Hou, M. Mi, M. Zhang, J. Zheng, H. Zhang, Y. Hao, High RF
performance AlGaN/GaN HEMT fabricated by recess-arrayed ohmic contact technology. IEEE
Electron Device Lett. 39(6), 811–814 (2018)
32. W. Lu, V. Kumar, E.L. Piner, I. Adesida, DC, RF, and microwave noise performance of AlGaNGaN field effect transistors dependence of aluminum concentration. IEEE Trans. Electron
Devices 50(4), 1069–1074 (2003)
33. T. Palacios, C.S. Suh, A. Chakraborty, S. Keller, S.P. DenBaars, U.K. Mishra, High-performance
E-mode AlGaN/GaN HEMTs. IEEE Electron Device Lett. 27(6), 428–430 (2006)
34. J.W. Chung, W.E. Hoke, E.M. Chumbes, T. Palacios, AlGaN/GaN HEMT With 300-GHz f max .
IEEE Electron Device Lett. 31(3), 195–197 (2010)
35. D. Denninghoff, J. Lu, M. Laurent, E. Ahmadi, S. Keller, U.K. Mishra, N-polar GaN/InAlN
MIS-HEMT with 400-GHz f max , in 70th Device Research Conference, IEEE, 18 June 2012,
pp. 151–152
36. A.G. Baca, B.A. Klein, J.R. Wendt, S.M. Lepkowski, C.D. Nordquist, A.M. Armstrong, A.A.
Allerman, E.A. Douglas, R.J. Kaplar, RF performance of Al 0.85 Ga 0.15 N/Al 0.70 Ga 0.30 N
high electron mobility transistors with 80-nm gates. IEEE Electron Device Lett. 40(1), 17–20
(2018)
37. D. Qiao, Z.F. Guan, J. Carlton, S.S. Lau, G.J. Sullivan, Low resistance ohmic contacts on
AlGaN/GaN structures using implantation and the “advancing” Al/Ti metallization. Appl.
Phys. Lett. 74(18), 2652–2654 (1999)
38. H. Yu, L. McCarthy, S. Rajan, S. Keller, S. Denbaars, J. Speck, U. Mishra, Ion implanted AlGaNGaN HEMTs with nonalloyed ohmic contacts. IEEE Electron Device Lett. 26(5), 283–285
(2005)
61
21. W.L. Pribble, J.W. Palmour, S.T. Sheppard, R.P. Smith, S.T. Allen, T.J. Smith, Z. Ring, J.J.
Sumakeris, A.W. Saxler, J.W. Milligan, Applications of SiC MESFETs and GaN HEMTs in
power amplifier design, in 2002 IEEE MTT-S International Microwave Symposium Digest (Cat.
No. 02CH37278), IEEE, vol. 3, 2 June 2002, pp. 1819–1822
22. Y.F. Wu, A. Saxler, M. Moore, R.P. Smith, S. Sheppard, P.M. Chavarkar, T. Wisleder, U.K.
Mishra, P. Parikh, 30-W/mm GaN HEMTs by field plate optimization. IEEE Electron Device
Lett. 25(3), 117–119 (2004)
23. Y. Okamoto, Y. Ando, K. Hataya, T. Nakayama, H. Miyamoto, T. Inoue, M. Senda, K. Hirata,
M. Kosaki, N. Shibata, M. Kuzuhara, A 149 W recessed-gate AlGaN/GaN FP-FET, in 2004
IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No. 04CH37535), IEEE,
vol. 3, 6 June 2004, pp. 1351–1354
24. Y.F. Wu, M. Moore, A. Saxler, T. Wisleder, P. Parikh, 40-W/mm double field-plated GaN
HEMTs, in 2006 64th Device Research Conference, IEEE, 26 June 2006, pp. 151–152
25. M.Y. Kao, C. Lee, R. Hajji, P. Saunier, H.Q. Tserng, AlGaN/GaN HEMTs with PAE of 53% at
35 GHz for HPA and multi-function MMIC applications, in 2007 IEEE/MTT-S International
Microwave Symposium, IEEE, 3 June 2007, pp. 627–629
26. Y. Murase, A. Wakejima, T. Inoue, K. Yamanoguchi, M. Tanomura, T. Nakayama, Y. Okamoto,
K. Ota, Y. Ando, N. Kuroda, K. Matsunaga, CW 20-W AlGaN/GaN FET power amplifier
for quasi-millimeter wave applications, in 2007 IEEE Compound Semiconductor Integrated
Circuits Symposium, IEEE, 14 Oct 2007, pp. 1–4
27. D.C. Dumka, T.M. Chou, F. Faili, D. Francis, F. Ejeckam, AlGaN/GaN HEMTs on diamond
substrate with over 7 W/mm output power density at 10 GHz. Electron. Lett. 49(20), 1298–1299
(2013)
28. P.C. Chao, K. Chu, J. Diaz, C. Creamer, S. Sweetland, R. Kallaher, C. McGray, G.D. Via, J.
Blevins, GaN-on-diamond HEMTs with 11 W/mm output power at 10GHz. MRS Advances
1(2), 147–155 (2016)
29. M. Micovic, D.F. Brown, D. Regan, J. Wong, Y. Tang, F. Herrault, D. Santos, S.D. Burnham,
J. Tai, E. Prophet, I. Khalaf, High frequency GaN HEMTs for RF MMIC applications, in 2016
IEEE International Electron Devices Meeting (IEDM), IEEE, 3 Dec 2016, pp. 3–3
30. B. Romanczyk, S. Wienecke, M. Guidry, H. Li, E. Ahmadi, X. Zheng, S. Keller, U.K. Mishra,
Demonstration of constant 8 W/mm power density at 10, 30, and 94 GHz in state-of-the-art
millimeter-wave N-polar GaN MISHEMTs. IEEE Trans. Electron Devices 65(1), 45–50 (2017)
31. Y. Lu, X. Ma, L. Yang, B. Hou, M. Mi, M. Zhang, J. Zheng, H. Zhang, Y. Hao, High RF
performance AlGaN/GaN HEMT fabricated by recess-arrayed ohmic contact technology. IEEE
Electron Device Lett. 39(6), 811–814 (2018)
32. W. Lu, V. Kumar, E.L. Piner, I. Adesida, DC, RF, and microwave noise performance of AlGaNGaN field effect transistors dependence of aluminum concentration. IEEE Trans. Electron
Devices 50(4), 1069–1074 (2003)
33. T. Palacios, C.S. Suh, A. Chakraborty, S. Keller, S.P. DenBaars, U.K. Mishra, High-performance
E-mode AlGaN/GaN HEMTs. IEEE Electron Device Lett. 27(6), 428–430 (2006)
34. J.W. Chung, W.E. Hoke, E.M. Chumbes, T. Palacios, AlGaN/GaN HEMT With 300-GHz f max .
IEEE Electron Device Lett. 31(3), 195–197 (2010)
35. D. Denninghoff, J. Lu, M. Laurent, E. Ahmadi, S. Keller, U.K. Mishra, N-polar GaN/InAlN
MIS-HEMT with 400-GHz f max , in 70th Device Research Conference, IEEE, 18 June 2012,
pp. 151–152
36. A.G. Baca, B.A. Klein, J.R. Wendt, S.M. Lepkowski, C.D. Nordquist, A.M. Armstrong, A.A.
Allerman, E.A. Douglas, R.J. Kaplar, RF performance of Al 0.85 Ga 0.15 N/Al 0.70 Ga 0.30 N
high electron mobility transistors with 80-nm gates. IEEE Electron Device Lett. 40(1), 17–20
(2018)
37. D. Qiao, Z.F. Guan, J. Carlton, S.S. Lau, G.J. Sullivan, Low resistance ohmic contacts on
AlGaN/GaN structures using implantation and the “advancing” Al/Ti metallization. Appl.
Phys. Lett. 74(18), 2652–2654 (1999)
38. H. Yu, L. McCarthy, S. Rajan, S. Keller, S. Denbaars, J. Speck, U. Mishra, Ion implanted AlGaNGaN HEMTs with nonalloyed ohmic contacts. IEEE Electron Device Lett. 26(5), 283–285
(2005)