60
R. Singh et al.
References
1. E.O. Johnson, Physical limitation on frequency and power parameters of transistors. RCA Rev.
163–176 (1965)
2. B.J. Baliga, Semiconductors for high-voltage, vertical channel field-effect transistors. J. Appl.
Phys. 53(3), 1759–1764 (1982)
3. B.J. Baliga, Power semiconductor device figure of merit for high-frequency applications. IEEE
Electron Device Lett. 10(10), 455–457 (1989)
4. M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, S. Yamakoshi, Gallium oxide (Ga2O3)
metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates. Appl.
Phys. Lett. 100(1), 013504 (2012)
5. R. Reiner, P. Waltereit, F. Benkhelifa, S. Muller, S. Müller, H. Walcher, S. Wagner, R. Quay,
M. Schlechtweg, O. Ambacher, Fractal structures for low-resistance large area AlGaN/GaN
power transistors, in 2012 24th International Symposium on Power Semiconductor Devices
and ICs, IEEE, 3 June 2012, pp. 341–344
6. U.K. Mishra, L. Shen, T.E. Kazior, Y.F. Wu, GaN-based RF power devices and amplifiers.
Proc. IEEE 96(2), 287–305 (2008)
7. J.H. Choi, High-speed devices and circuits with THz applications (CRC Press, 2014)
8. F. Medjdoub, Gallium nitride (GaN): physics, devices, and technology. (CRC Press, 2015)
9. J.L. Prince, J.M. Links, Medical imaging signals and systems (Pearson Prentice Hall, Upper
Saddle River, 2006)
10. X. Wan, W.S. Zhou, S. Ren, D.G. Liu, J. Xu, H.L. Bo, E.X. Zhang, R.D. Schrimpf, D.M.
Fleetwood, T.P. Ma, SEB hardened power MOSFETs with high-K dielectrics. IEEE Trans.
Nucl. Sci. 62(6), 2830–2836 (2015)
11. K. Ahi, Review of GaN-based devices for terahertz operation. Opt. Eng. 56(9), 090901 (2017)
12. M. Asif Khan, J.N. Kuznia, D.T. Olson, W.J. Schaff, J.W. Burm, M.S. Shur, Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor. Appl. Phys. Lett.
65(9), 1121–1123 (1994)
13. Y.F. Wu, B.P. Keller, S. Keller, D. Kapolnek, S.P. Denbaars, U.K. Mishra, Measured microwave
power performance of AlGaN/GaN MODFET. IEEE Electron Device Lett. 17(9), 455–457
(1996)
14. M.A. Khan, M.S. Shur, Q.C. Chen, J.N. Kuznia, Current/voltage characteristic collapse in
AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias. Electron.
Lett. 30(25), 2175–2176 (1994)
15. S.C. Binari, K. Ikossi, J.A. Roussos, W. Kruppa, D. Park, H.B. Dietrich, D.D. Koleske, A.E.
Wickenden, R.L. Henry, Trapping effects and microwave power performance in AlGaN/GaN
HEMTs. IEEE Trans. Electron Devices 48(3), 465–471 (2001)
16. B.M. Green, K.K. Chu, E.M. Chumbes, J.A. Smart, J.R. Shealy, L.F. Eastman, The effect of
surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs. IEEE
Electron Device Lett. 21(6), 268–270 (2000)
17. Y.F. Wu, D. Kapolnek, J. Ibbetson, N.Q. Zhang, P. Parikh, B.P. Keller, U.K. Mishra, High
Al-content AlGaN/GaN HEMTs on SiC substrates with very high power performance, in
International Electron Devices Meeting 1999, Technical Digest (Cat. No. 99CH36318), IEEE,
5 Dec 1999, pp. 925–927
18. N.X. Nguyen, M. Micovic, W.S. Wong, P. Hashimoto, L.M. McCray, P. Janke, C. Nguyen,
High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE.
Electron. Lett. 36(5), 468–469 (2000)
19. Y. Ando, Y. Okamoto, H. Miyamoto, T. Nakayama, T. Inoue, M. Kuzuhara, 10-W/mm AlGaNGaN HFET with a field modulating plate. IEEE Electron Device Lett. 24(5), 289–291 (2003)
20. J.R. Shealy, V. Kaper, V. Tilak, T. Prunty, J.A. Smart, B. Green, L.F. Eastman, An AlGaN/GaN
high-electron-mobility transistor with an AlN sub-buffer layer. J. Phys. Condens. Matter 14(13),
3499 (2002)
R. Singh et al.
References
1. E.O. Johnson, Physical limitation on frequency and power parameters of transistors. RCA Rev.
163–176 (1965)
2. B.J. Baliga, Semiconductors for high-voltage, vertical channel field-effect transistors. J. Appl.
Phys. 53(3), 1759–1764 (1982)
3. B.J. Baliga, Power semiconductor device figure of merit for high-frequency applications. IEEE
Electron Device Lett. 10(10), 455–457 (1989)
4. M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, S. Yamakoshi, Gallium oxide (Ga2O3)
metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates. Appl.
Phys. Lett. 100(1), 013504 (2012)
5. R. Reiner, P. Waltereit, F. Benkhelifa, S. Muller, S. Müller, H. Walcher, S. Wagner, R. Quay,
M. Schlechtweg, O. Ambacher, Fractal structures for low-resistance large area AlGaN/GaN
power transistors, in 2012 24th International Symposium on Power Semiconductor Devices
and ICs, IEEE, 3 June 2012, pp. 341–344
6. U.K. Mishra, L. Shen, T.E. Kazior, Y.F. Wu, GaN-based RF power devices and amplifiers.
Proc. IEEE 96(2), 287–305 (2008)
7. J.H. Choi, High-speed devices and circuits with THz applications (CRC Press, 2014)
8. F. Medjdoub, Gallium nitride (GaN): physics, devices, and technology. (CRC Press, 2015)
9. J.L. Prince, J.M. Links, Medical imaging signals and systems (Pearson Prentice Hall, Upper
Saddle River, 2006)
10. X. Wan, W.S. Zhou, S. Ren, D.G. Liu, J. Xu, H.L. Bo, E.X. Zhang, R.D. Schrimpf, D.M.
Fleetwood, T.P. Ma, SEB hardened power MOSFETs with high-K dielectrics. IEEE Trans.
Nucl. Sci. 62(6), 2830–2836 (2015)
11. K. Ahi, Review of GaN-based devices for terahertz operation. Opt. Eng. 56(9), 090901 (2017)
12. M. Asif Khan, J.N. Kuznia, D.T. Olson, W.J. Schaff, J.W. Burm, M.S. Shur, Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor. Appl. Phys. Lett.
65(9), 1121–1123 (1994)
13. Y.F. Wu, B.P. Keller, S. Keller, D. Kapolnek, S.P. Denbaars, U.K. Mishra, Measured microwave
power performance of AlGaN/GaN MODFET. IEEE Electron Device Lett. 17(9), 455–457
(1996)
14. M.A. Khan, M.S. Shur, Q.C. Chen, J.N. Kuznia, Current/voltage characteristic collapse in
AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias. Electron.
Lett. 30(25), 2175–2176 (1994)
15. S.C. Binari, K. Ikossi, J.A. Roussos, W. Kruppa, D. Park, H.B. Dietrich, D.D. Koleske, A.E.
Wickenden, R.L. Henry, Trapping effects and microwave power performance in AlGaN/GaN
HEMTs. IEEE Trans. Electron Devices 48(3), 465–471 (2001)
16. B.M. Green, K.K. Chu, E.M. Chumbes, J.A. Smart, J.R. Shealy, L.F. Eastman, The effect of
surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs. IEEE
Electron Device Lett. 21(6), 268–270 (2000)
17. Y.F. Wu, D. Kapolnek, J. Ibbetson, N.Q. Zhang, P. Parikh, B.P. Keller, U.K. Mishra, High
Al-content AlGaN/GaN HEMTs on SiC substrates with very high power performance, in
International Electron Devices Meeting 1999, Technical Digest (Cat. No. 99CH36318), IEEE,
5 Dec 1999, pp. 925–927
18. N.X. Nguyen, M. Micovic, W.S. Wong, P. Hashimoto, L.M. McCray, P. Janke, C. Nguyen,
High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE.
Electron. Lett. 36(5), 468–469 (2000)
19. Y. Ando, Y. Okamoto, H. Miyamoto, T. Nakayama, T. Inoue, M. Kuzuhara, 10-W/mm AlGaNGaN HFET with a field modulating plate. IEEE Electron Device Lett. 24(5), 289–291 (2003)
20. J.R. Shealy, V. Kaper, V. Tilak, T. Prunty, J.A. Smart, B. Green, L.F. Eastman, An AlGaN/GaN
high-electron-mobility transistor with an AlN sub-buffer layer. J. Phys. Condens. Matter 14(13),
3499 (2002)