RF Performance of Ultra-wide Bandgap
HEMTs
Rajan Singh, T. R. Lenka, D. Panda, R. T. Velpula, B. Jain, H. Q. T. Bui
and H. P. T. Nguyen
Abstract In the current scenario of high-speed electronics technology, many application areas—broadband Internet access, fifth-generation (4G/5G) mobile systems,
and cutting-edge military applications—are realizing very-fast to reality. To cater
these ever-increasing demands, radio-frequency (RF) and microwave power amplifiers are in prime-attention, and will be constantly evaluated on price versus performance metrics. Ultra-wide bandgap (UWBG) high electron mobility transistors
(HEMTs) are promising candidates for switching power applications owing to veryhigh breakdown strength of the material. And higher values of energy band gap (E g )
and electron mobility enabled low on-resistance (R ON ) guarantees superior power
handling capability. UWBG HEMTs having two-dimensional electron gas (2DEG)
channel with high carrier concentration and high electron mobility are fast gaining space in high frequency and power switching applications. Also, these UWBG
materials having large optical phonon energy, E op ~92 meV (GaN), ~45 meV (βGa 2 O 3 ) make them most suitable semiconductor materials for the imminent terahertz (THz, 10
12 Hz) frequency applications: THz imaging and spectroscopy. In this
paper, we present latest technological developments of the gallium nitride (GaN)and beta-phase of gallium oxide (β-Ga 2 O 3 )-based HEMTs, with careful and quantitative investigation of their suitability toward radio frequency (RF), high power
device applications, and THz emerging applications.
R. Singh · T. R. Lenka (B)
Department of Electronics and Communication Engineering, National Institute of Technology
Silchar, Silchar, Assam 788010, India
e-mail: t.r.lenka@ieee.org
R. Singh
e-mail: rajan_singh@ieee.org
D. Panda
School of Electronics, VIT-AP University, Amaravati, Andhra Pradesh 522237, India
R. T. Velpula · B. Jain · H. Q. T. Bui · H. P. T. Nguyen
Department of Electrical and Computer Engineering, New Jersey Institute of Technology,
Newark, NJ 07102, USA
© Springer Nature Singapore Pte Ltd. 2020
A. Biswas et al. (eds.), Emerging Trends in Terahertz Solid-State Physics and Devices,
https://doi.org/10.1007/978-981-15-3235-1_4
49
HEMTs
Rajan Singh, T. R. Lenka, D. Panda, R. T. Velpula, B. Jain, H. Q. T. Bui
and H. P. T. Nguyen
Abstract In the current scenario of high-speed electronics technology, many application areas—broadband Internet access, fifth-generation (4G/5G) mobile systems,
and cutting-edge military applications—are realizing very-fast to reality. To cater
these ever-increasing demands, radio-frequency (RF) and microwave power amplifiers are in prime-attention, and will be constantly evaluated on price versus performance metrics. Ultra-wide bandgap (UWBG) high electron mobility transistors
(HEMTs) are promising candidates for switching power applications owing to veryhigh breakdown strength of the material. And higher values of energy band gap (E g )
and electron mobility enabled low on-resistance (R ON ) guarantees superior power
handling capability. UWBG HEMTs having two-dimensional electron gas (2DEG)
channel with high carrier concentration and high electron mobility are fast gaining space in high frequency and power switching applications. Also, these UWBG
materials having large optical phonon energy, E op ~92 meV (GaN), ~45 meV (βGa 2 O 3 ) make them most suitable semiconductor materials for the imminent terahertz (THz, 10
12 Hz) frequency applications: THz imaging and spectroscopy. In this
paper, we present latest technological developments of the gallium nitride (GaN)and beta-phase of gallium oxide (β-Ga 2 O 3 )-based HEMTs, with careful and quantitative investigation of their suitability toward radio frequency (RF), high power
device applications, and THz emerging applications.
R. Singh · T. R. Lenka (B)
Department of Electronics and Communication Engineering, National Institute of Technology
Silchar, Silchar, Assam 788010, India
e-mail: t.r.lenka@ieee.org
R. Singh
e-mail: rajan_singh@ieee.org
D. Panda
School of Electronics, VIT-AP University, Amaravati, Andhra Pradesh 522237, India
R. T. Velpula · B. Jain · H. Q. T. Bui · H. P. T. Nguyen
Department of Electrical and Computer Engineering, New Jersey Institute of Technology,
Newark, NJ 07102, USA
© Springer Nature Singapore Pte Ltd. 2020
A. Biswas et al. (eds.), Emerging Trends in Terahertz Solid-State Physics and Devices,
https://doi.org/10.1007/978-981-15-3235-1_4
49