48
S. J. Mukhopadhyay et al.
6. H.A. Haus, H. Statz, R.A. Pucel, Optimum noise measure of IMPATT diode. IEEE Trans. MTT
MTT-19, 801 (1971)
7. R.L. Kuvas, Noise in IMPATT diodes Intrinsic properties. IEEE Trans. Electron Dev. ED-19,
220 (1972)
8. M.E. Elta, G.I. Haddad, Mixed tunneling and avalanche mechanism in p-n junctions and their
effects on microwave transit time devices. IEEE Trans. Electron Dev. 25, 694–702 (1978)
9. G.N. Dash, J.K. Mishra, A.K. Panda, Noise in mixed tunneling avalanche transit time (MITATT)
diodes. Solid State Electron. 39(10), 1473–1479 (1996)
10. J.K. Mishra, A.K. Panda, G.N. Dash, An extremely low-noise heterojunction IMPATT. IEEE
Trans. Electron Dev. 44(ED-12), 2143–2148 (1997)
11. A. Acharyya, M. Mukherjee, J.P. Banerjee, Noise Performance of Millimeter-wave silicon
based mixed tunneling avalanche transit time (MITATT) diode. Int. J. Electr. Electron. Eng.
4(8), 577–584 (2010)
12. A. Acharyya, M. Mukherjee, J.P. Banerjee, Noise in millimeter-wave mixed tunneling
avalanche transit time diodes. Arch. Appl. Sci. Res. 3(1), 250–266 (2011)
13. S. Banerjee, A. Acharyya, J.P. Banerjee, Millimeter-wave and noise properties of Si ~ Si 1-x Ge x
heterojunction double-drift region MITATT devices at 94 GHz. in IEEE Conference CODEC
(Kolkata, India, 2012), pp. 1–4, 17–19 Dec 2012
14. W.N. Grant, Electron and hole ionization rates in epitaxial silicon. Solid State Electron. 16,
1189–1203 (1973)
15. R. Mickevicius, J.H. Zhao, Monte Carlo study of electron transport in SiC. J. Appl. Phys. 83,
3161–3167 (1998)
16. E.A. Konorova, Y.A. Kuznetsov, V.F. Sergienko, S.D. Tkachenko, A.K. Tsikunov, A.V. Spitsyn, Y.Z. Danyushevski, Impact ionization in semiconductor structures made of ion-implanted
diamond. Sov. Phys. Semicond. 17, 146 (1983)
17. C. Canali, G. Ottaviani, A.A. Quaranta, Drift velocity of electrons and holes and associated
anisotropic effects in silicon. J. Phys. Chem. Solids 32, 1707–1720 (1971)
18. D.K. Ferry, High-field transport in wide-bandgap semiconductors. Phys. Rev. B 12, 2361 (1975)
19. C. Canali, E. Gatti, S.F. Kozlov, P.F. Manfredi, C. Manfredotti, F. Nava, A. Quirini, Electrical
properties and performances of neutral diamond nuclear radiation detectors. Nuclear Instrum.
Methods 160, 73 (1979)
20. C. Canali, E. Gatti, S.F. Kozlov, P.F. Manfredi, C. Manfredotti, F. Nava, A. Quirini, Electronic
Archive: New Semiconductor Materials, Characteristics and Properties. Available from http://
www.ioffe.ru/SVA/NSM/Semicond/index.html. Last accessed on Sept 2019
21. A. Acharyya, S. Banerjee, J.P. Banerjee, Influence of skin effect on the series resistance of
millimeter-wave of IMPATT devices. J. Comput. Electron. 12(3), 511–525 (2013)
22. A. Acharyya, S. Banerjee, J.P. Banerjee, Effect of photo-irradiation on the noise properties of
double-drift silicon MITATT device. Int. J. Electron. 101(9), 1270–1286 (2014)
23. P. Banerjee, A. Acharyya, A. Biswas, A.K. Bhattacharjee, H. Inokawa, Noise performance
of magnetic field tunable avalanche transit time source. Int. J. Electr. Commun. Eng. 12(10),
718–728 (2018)
24. P.K. Bandyopadhyay, A. Biswas, A.K. Bhattacharjee, A. Acharyya, Influence of carrier-carrier
interactions on the noise performance of millimeter-wave IMPATTs. IETE J. Res. 65(4), 515–
522 (2019)
25. H. Okamoto, M. Ikeda, A comparative study of noise properties of Si IMPATT diodes operating
at 80 GHz. Proc. IEEE (Lett.) 64, 367–368 (1976)
S. J. Mukhopadhyay et al.
6. H.A. Haus, H. Statz, R.A. Pucel, Optimum noise measure of IMPATT diode. IEEE Trans. MTT
MTT-19, 801 (1971)
7. R.L. Kuvas, Noise in IMPATT diodes Intrinsic properties. IEEE Trans. Electron Dev. ED-19,
220 (1972)
8. M.E. Elta, G.I. Haddad, Mixed tunneling and avalanche mechanism in p-n junctions and their
effects on microwave transit time devices. IEEE Trans. Electron Dev. 25, 694–702 (1978)
9. G.N. Dash, J.K. Mishra, A.K. Panda, Noise in mixed tunneling avalanche transit time (MITATT)
diodes. Solid State Electron. 39(10), 1473–1479 (1996)
10. J.K. Mishra, A.K. Panda, G.N. Dash, An extremely low-noise heterojunction IMPATT. IEEE
Trans. Electron Dev. 44(ED-12), 2143–2148 (1997)
11. A. Acharyya, M. Mukherjee, J.P. Banerjee, Noise Performance of Millimeter-wave silicon
based mixed tunneling avalanche transit time (MITATT) diode. Int. J. Electr. Electron. Eng.
4(8), 577–584 (2010)
12. A. Acharyya, M. Mukherjee, J.P. Banerjee, Noise in millimeter-wave mixed tunneling
avalanche transit time diodes. Arch. Appl. Sci. Res. 3(1), 250–266 (2011)
13. S. Banerjee, A. Acharyya, J.P. Banerjee, Millimeter-wave and noise properties of Si ~ Si 1-x Ge x
heterojunction double-drift region MITATT devices at 94 GHz. in IEEE Conference CODEC
(Kolkata, India, 2012), pp. 1–4, 17–19 Dec 2012
14. W.N. Grant, Electron and hole ionization rates in epitaxial silicon. Solid State Electron. 16,
1189–1203 (1973)
15. R. Mickevicius, J.H. Zhao, Monte Carlo study of electron transport in SiC. J. Appl. Phys. 83,
3161–3167 (1998)
16. E.A. Konorova, Y.A. Kuznetsov, V.F. Sergienko, S.D. Tkachenko, A.K. Tsikunov, A.V. Spitsyn, Y.Z. Danyushevski, Impact ionization in semiconductor structures made of ion-implanted
diamond. Sov. Phys. Semicond. 17, 146 (1983)
17. C. Canali, G. Ottaviani, A.A. Quaranta, Drift velocity of electrons and holes and associated
anisotropic effects in silicon. J. Phys. Chem. Solids 32, 1707–1720 (1971)
18. D.K. Ferry, High-field transport in wide-bandgap semiconductors. Phys. Rev. B 12, 2361 (1975)
19. C. Canali, E. Gatti, S.F. Kozlov, P.F. Manfredi, C. Manfredotti, F. Nava, A. Quirini, Electrical
properties and performances of neutral diamond nuclear radiation detectors. Nuclear Instrum.
Methods 160, 73 (1979)
20. C. Canali, E. Gatti, S.F. Kozlov, P.F. Manfredi, C. Manfredotti, F. Nava, A. Quirini, Electronic
Archive: New Semiconductor Materials, Characteristics and Properties. Available from http://
www.ioffe.ru/SVA/NSM/Semicond/index.html. Last accessed on Sept 2019
21. A. Acharyya, S. Banerjee, J.P. Banerjee, Influence of skin effect on the series resistance of
millimeter-wave of IMPATT devices. J. Comput. Electron. 12(3), 511–525 (2013)
22. A. Acharyya, S. Banerjee, J.P. Banerjee, Effect of photo-irradiation on the noise properties of
double-drift silicon MITATT device. Int. J. Electron. 101(9), 1270–1286 (2014)
23. P. Banerjee, A. Acharyya, A. Biswas, A.K. Bhattacharjee, H. Inokawa, Noise performance
of magnetic field tunable avalanche transit time source. Int. J. Electr. Commun. Eng. 12(10),
718–728 (2018)
24. P.K. Bandyopadhyay, A. Biswas, A.K. Bhattacharjee, A. Acharyya, Influence of carrier-carrier
interactions on the noise performance of millimeter-wave IMPATTs. IETE J. Res. 65(4), 515–
522 (2019)
25. H. Okamoto, M. Ikeda, A comparative study of noise properties of Si IMPATT diodes operating
at 80 GHz. Proc. IEEE (Lett.) 64, 367–368 (1976)