Terahertz Radiators Based on Silicon Carbide Avalanche Transit …
47
Fig. 8 Noise measure
versus frequency graph
associated with THz DDR
IMPATT sources based on
Si, 3C-SiC, and diamond
6 Conclusion
The small-signal avalanche noise simulation has been carried out and presented here
in order to focus the potentialities of mm-wave and THz WBG semiconductorsbased IMPATT sources like 3C-SiC and type-IIb diamond (C). Noise characteristics
of those sources have been compared with the conventional semiconductor substance,
i.e., Si-based IMPATTs. The simulation studies show that the WBG semiconductorbased IMPATT sources possess significantly poor noise performance than the conventional Si-based IMPATT sources. However, significantly better RF power delivery capability of WBG IMPATT sources makes them superior to Si IMPATTs for
mm-wave and THz applications.
Acknowledgements The authors deeply feel and acknowledge the help and spontaneous support
rendered by the authority of IIEST, Shibpur, West Bengal, by making a suitable arrangement to
perform the research work smoothly.
References
1. A.S. Tager, Current fluctuations in semiconductor (dielectric) under the conditions of impact
ionization and avalanche breakdown. Sov. Phys. Solid State 4, 1919 (1965)
2. S.T. Fisher, Small-signal impedance of avalanche junctions with unequal electron and hole
ionization rates and drift velocities. IEEE Trans. Electron Dev. ED-14, 313–322 (1967)
3. M.E. Hines, Noise theory of read type avalanche diode. IEEE Trans. Electron Dev. ED-13, 57
(1966)
4. H.K. Gummel, J.L. Blue, A small-signal theory of avalanche noise in IMPATT diodes. IEEE
Trans Electron Dev. 14, 569–580 (1967)
5. J.K. Inkson, Noise generation under large signal conditions in the read micro-wave avalanche
diode. Int. J. Electron. 25, 1 (1958)
47
Fig. 8 Noise measure
versus frequency graph
associated with THz DDR
IMPATT sources based on
Si, 3C-SiC, and diamond
6 Conclusion
The small-signal avalanche noise simulation has been carried out and presented here
in order to focus the potentialities of mm-wave and THz WBG semiconductorsbased IMPATT sources like 3C-SiC and type-IIb diamond (C). Noise characteristics
of those sources have been compared with the conventional semiconductor substance,
i.e., Si-based IMPATTs. The simulation studies show that the WBG semiconductorbased IMPATT sources possess significantly poor noise performance than the conventional Si-based IMPATT sources. However, significantly better RF power delivery capability of WBG IMPATT sources makes them superior to Si IMPATTs for
mm-wave and THz applications.
Acknowledgements The authors deeply feel and acknowledge the help and spontaneous support
rendered by the authority of IIEST, Shibpur, West Bengal, by making a suitable arrangement to
perform the research work smoothly.
References
1. A.S. Tager, Current fluctuations in semiconductor (dielectric) under the conditions of impact
ionization and avalanche breakdown. Sov. Phys. Solid State 4, 1919 (1965)
2. S.T. Fisher, Small-signal impedance of avalanche junctions with unequal electron and hole
ionization rates and drift velocities. IEEE Trans. Electron Dev. ED-14, 313–322 (1967)
3. M.E. Hines, Noise theory of read type avalanche diode. IEEE Trans. Electron Dev. ED-13, 57
(1966)
4. H.K. Gummel, J.L. Blue, A small-signal theory of avalanche noise in IMPATT diodes. IEEE
Trans Electron Dev. 14, 569–580 (1967)
5. J.K. Inkson, Noise generation under large signal conditions in the read micro-wave avalanche
diode. Int. J. Electron. 25, 1 (1958)