Terahertz Radiators Based on Silicon Carbide Avalanche Transit …
35
43. A. Acharyya, A. Mallik, D. Banerjee, S. Ganguli, A. Das, S. Dasgupta, J.P. Banerjee, IMPATT
devices based on group III–V compound semiconductors: prospects as potential terahertz
radiators. HKIE Trans. 21(3), 135–147 (2014)
44. A. Acharyya, S. Banerjee, J.P. Banerjee, Large-signal simulation of 94 GHz pulsed DDR
silicon IMPATTs including the temperature transient effect. Radioengineering 21(4), 1218–
1225 (2012)
45. A. Acharyya, J. Goswami, S. Banerjee, J.P. Banerjee, Estimation of most favorable optical
window position subject to achieve finest optical control of lateral DDR IMPATT diode designed
to operate at W-band. Radioengineering 23(2), 739–753 (2014)
46. A. Acharyya, S. Banerjee, J.P. Banerjee, Optical control of large-signal properties of millimeterwave and sub-millimeter-wave DDR Si IMPATTs. J. Comput. Electr. 13, 408–424 (2014)
47. A. Acharyya, A. Mallik, D. Banerjee, S. Ganguli, A. Das, S. Dasgupta, J.P. Banerjee, Largesignal characterizations of DDR IMPATT devices based on group III–V semiconductors at
millimeter-wave and terahertz frequencies. J. Semiconductors 35, 084003 (2014)
48. A. Acharyya, S. Banerjee, J.P. Banerjee, A proposed simulation technique to study the series
resistance and related millimeter-wave properties of Ka-band Si IMPATTs from the electric
field snap-shots. Int. J. Microw. Wirel. Technol. 5(1), 91–100 (2013)
49. A. Acharyya, S. Banerjee, J.P. Banerjee, Influence of skin effect on the series resistance of
millimeter-wave of IMPATT devices. J. Comput. Electron. 12(3), 511–525 (2013)
50. M. Tschernitz, J. Freyer, 140 GHz GaAs double-read IMPATT diodes. Electron. Lett. 31(7),
582–583 (1995)
51. M.G. Adlerstein, S.L.G. Chu, GaAs IMPATT diodes for 60 GHz. IEEE Electron Dev. Lett. 5,
97–98 (1984)
52. H. Eisele, C.C. Chen, G.O. Munns, G.I. Haddad, The potential of InP IMPATT diodes as highpower millimetre-wave sources: first experimental results. IEEE MTT-S Int. Microw. Symp.
Digest 2, 529–532 (1996)
53. A. Acharyya, S. Chatterjee, J. Goswami, S. Banerjee, J.P. Banerjee, Quantum drift-diffusion
model for IMPATT devices. J. Comput. Electron. 13, 739–752 (2014)
54. A. Acharyya, J. Goswami, S. Banerjee, J.P. Banerjee, Quantum corrected drift-diffusion model
for terahertz IMPATTs based on different semiconductors. J. Comput. Electron. 14, 309–320
(2015)
55. A. Acharyya, K. Datta, R. Ghosh, M. Sarkar, R. Sanyal, S. Banerjee, J.P. Banerjee, Diamond based DDR IMPATTs: prospects and potentiality as millimeter-wave source at 94 GHz
atmospheric window. Radioengineering 22(2), 624–631 (2013)
56. A. Acharyya, S. Banerjee, J.P. Banerjee, Potentiality of semiconducting diamond as base
material of millimeter-wave and terahertz IMPATT devices. J. Semiconductors 35(3), 034005
(2013)
35
43. A. Acharyya, A. Mallik, D. Banerjee, S. Ganguli, A. Das, S. Dasgupta, J.P. Banerjee, IMPATT
devices based on group III–V compound semiconductors: prospects as potential terahertz
radiators. HKIE Trans. 21(3), 135–147 (2014)
44. A. Acharyya, S. Banerjee, J.P. Banerjee, Large-signal simulation of 94 GHz pulsed DDR
silicon IMPATTs including the temperature transient effect. Radioengineering 21(4), 1218–
1225 (2012)
45. A. Acharyya, J. Goswami, S. Banerjee, J.P. Banerjee, Estimation of most favorable optical
window position subject to achieve finest optical control of lateral DDR IMPATT diode designed
to operate at W-band. Radioengineering 23(2), 739–753 (2014)
46. A. Acharyya, S. Banerjee, J.P. Banerjee, Optical control of large-signal properties of millimeterwave and sub-millimeter-wave DDR Si IMPATTs. J. Comput. Electr. 13, 408–424 (2014)
47. A. Acharyya, A. Mallik, D. Banerjee, S. Ganguli, A. Das, S. Dasgupta, J.P. Banerjee, Largesignal characterizations of DDR IMPATT devices based on group III–V semiconductors at
millimeter-wave and terahertz frequencies. J. Semiconductors 35, 084003 (2014)
48. A. Acharyya, S. Banerjee, J.P. Banerjee, A proposed simulation technique to study the series
resistance and related millimeter-wave properties of Ka-band Si IMPATTs from the electric
field snap-shots. Int. J. Microw. Wirel. Technol. 5(1), 91–100 (2013)
49. A. Acharyya, S. Banerjee, J.P. Banerjee, Influence of skin effect on the series resistance of
millimeter-wave of IMPATT devices. J. Comput. Electron. 12(3), 511–525 (2013)
50. M. Tschernitz, J. Freyer, 140 GHz GaAs double-read IMPATT diodes. Electron. Lett. 31(7),
582–583 (1995)
51. M.G. Adlerstein, S.L.G. Chu, GaAs IMPATT diodes for 60 GHz. IEEE Electron Dev. Lett. 5,
97–98 (1984)
52. H. Eisele, C.C. Chen, G.O. Munns, G.I. Haddad, The potential of InP IMPATT diodes as highpower millimetre-wave sources: first experimental results. IEEE MTT-S Int. Microw. Symp.
Digest 2, 529–532 (1996)
53. A. Acharyya, S. Chatterjee, J. Goswami, S. Banerjee, J.P. Banerjee, Quantum drift-diffusion
model for IMPATT devices. J. Comput. Electron. 13, 739–752 (2014)
54. A. Acharyya, J. Goswami, S. Banerjee, J.P. Banerjee, Quantum corrected drift-diffusion model
for terahertz IMPATTs based on different semiconductors. J. Comput. Electron. 14, 309–320
(2015)
55. A. Acharyya, K. Datta, R. Ghosh, M. Sarkar, R. Sanyal, S. Banerjee, J.P. Banerjee, Diamond based DDR IMPATTs: prospects and potentiality as millimeter-wave source at 94 GHz
atmospheric window. Radioengineering 22(2), 624–631 (2013)
56. A. Acharyya, S. Banerjee, J.P. Banerjee, Potentiality of semiconducting diamond as base
material of millimeter-wave and terahertz IMPATT devices. J. Semiconductors 35(3), 034005
(2013)