34
S. J. Mukhopadhyay et al.
21. K.V. Vassilevski, K. Zekentes, A.V. Zorenko, L.P. Romanov, Experimental determination of
electron drift velocity in 4H-SiC p + -n-n + avalanche diodes. IEEE Electron Dev. Lett. 21,
485–487 (2000)
22. A. Acharyya, J.P. Banerjee, Potentiality of IMPATT devices as terahertz source: an avalanche
response time based approach to determine the upper cut-off frequency limits. IETE J. Res.
59(2), 118–127 (2013)
23. R.J. Trew, J.B. Yan, P.M. Mock, The potentiality of diamond and SiC electronic devices for
microwave and millimeter-wave power applications. Proc. IEEE 79(5), 598–620 (1991)
24. P.M. Mock, R.J. Trew, RF performance characteristics of double-drift MM-wave diamond
IMPATT diodes. in Proceedings of IEEE/Cornell Conference Advanced Concepts in HighSpeed Semiconductor Devices and Circuits (1989), pp. 383–389
25. W.N. Grant, Electron and hole ionization rates in epitaxial silicon. Solid State Electron. 16,
1189–1203 (1973)
26. R. Mickevicius, J.H. Zhao, Monte carlo study of electron transport in SiC. J. Appl. Phys. 83,
3161–3167 (1998)
27. E.A. Konorova, Y.A. Kuznetsov, V.F. Sergienko, S.D. Tkachenko, A.K. Tsikunov, A.V. Spitsyn, Y.Z. Danyushevski, Impact ionization in semiconductor structures made of ion-implanted
diamond. Sov. Phys. Semicond 17, 146 (1983)
28. C. Canali, G. Ottaviani, A.A. Quaranta, Drift velocity of electrons and holes and associated
anisotropic effects in silicon. J. Phys. Chem. Solids 32, 1707–1720 (1971)
29. D.K. Ferry, High-field transport in wide-bandgap semiconductors. Phys. Rev. B 12, 2361 (1975)
30. C. Canali, E. Gatti, S.F. Kozlov, P.F. Manfredi, C. Manfredotti, F. Nava, A. Quirini, Electrical
properties and performances of neutral diamond nuclear radiation detectors. Nuclear Instrum.
Methods 160, 73 (1979)
31. C. Canali, E. Gatti, S.F. Kozlov, P.F. Manfredi, C. Manfredotti, F. Nava, A. Quirini, Electronic
archive: new semiconductor materials, characteristics and properties. Available from http://
www.ioffe.ru/SVA/NSM/Semicond/index.html. Last accessed on Sept 2019
32. S.M. Sze, R.M. Ryder, Microwave avalanche diodes. Proc. IEEE. Special Issue Microw.
Semiconductor Dev. 59, 1140–1154 (1971)
33. A. Acharyya, J. Chakraborty, K. Das, S. Datta, P. De, S. Banerjee, J.P. Banerjee, Large-signal
characterization of DDR silicon IMPATTs operating up to 0.5 THz. Int. J. Microw. Wirel.
Technol. 5(5), 567–578 (2013)
34. H.K. Gummel, J.L. Blue, A small-signal theory of avalanche noise in IMPATT diodes. IEEE
Trans. Electron Dev. 14, 569–580 (1967)
35. S.K. Roy, M. Sridharan, R. Ghosh, B.B. Pal, Computer method for the dc field and carrier current
profiles in the IMPATT device starting from the field extremum in the depletion layer. in Proceedings of the 1st Conference on Numerical Analysis of Semiconductor Devices (NASECODE
I), ed. by J.H. Miller (Dublin, Ireland, 1979), pp. 266–274
36. S.K. Roy, J.P. Banerjee, S.P. Pati, A computer analysis of the distribution of high frequency
negative resistance in the depletion layer of IMPATT Diodes. in Proceedings of 4th Conference
on Numerical Analysis of Semiconductor Devices (NASECODE IV) (Dublin, Ireland, 1985),
pp. 494–500
37. J.P. Banerjee, J.F. Luy, F. Schaffler, Comparison of theoretical and experimental 60 GHz silicon
IMPATT diode performance. Electron. Lett. 27, 1049–1050 (1991)
38. A. Acharyya, M. Mukherjee, J.P. Banerjee, Effects of tunnelling current on mm-wave IMPATT
Devices. Int. J. Electron. 102(9), 1429–1456 (2015)
39. W.J. Evans, G.I. Haddad, A large-signal analysis of IMPATT diodes. IEEE Trans. Electron
Dev. 15(10), 708–717 (1968)
40. D.L. Scharfetter, H.K. Gummel, Large-signal analysis of a silicon read diode oscillator. IEEE
Trans. Electron Dev. 6(1), 64–77 (1969)
41. M.S. Gupta, R.J. Lomax, A current-excited large-signal analysis of IMPATT devices and its
circuit implementations. IEEE Trans. Electron Dev. 20, 395–399 (1973)
42. A. Acharyya, S. Banerjee, J.P. Banerjee, Effect of junction temperature on the large-signal
properties of a 94 GHz silicon based double-drift region impact avalanche transit time device.
J. Semiconduct. 34(2), 024001–0240012 (2013)
S. J. Mukhopadhyay et al.
21. K.V. Vassilevski, K. Zekentes, A.V. Zorenko, L.P. Romanov, Experimental determination of
electron drift velocity in 4H-SiC p + -n-n + avalanche diodes. IEEE Electron Dev. Lett. 21,
485–487 (2000)
22. A. Acharyya, J.P. Banerjee, Potentiality of IMPATT devices as terahertz source: an avalanche
response time based approach to determine the upper cut-off frequency limits. IETE J. Res.
59(2), 118–127 (2013)
23. R.J. Trew, J.B. Yan, P.M. Mock, The potentiality of diamond and SiC electronic devices for
microwave and millimeter-wave power applications. Proc. IEEE 79(5), 598–620 (1991)
24. P.M. Mock, R.J. Trew, RF performance characteristics of double-drift MM-wave diamond
IMPATT diodes. in Proceedings of IEEE/Cornell Conference Advanced Concepts in HighSpeed Semiconductor Devices and Circuits (1989), pp. 383–389
25. W.N. Grant, Electron and hole ionization rates in epitaxial silicon. Solid State Electron. 16,
1189–1203 (1973)
26. R. Mickevicius, J.H. Zhao, Monte carlo study of electron transport in SiC. J. Appl. Phys. 83,
3161–3167 (1998)
27. E.A. Konorova, Y.A. Kuznetsov, V.F. Sergienko, S.D. Tkachenko, A.K. Tsikunov, A.V. Spitsyn, Y.Z. Danyushevski, Impact ionization in semiconductor structures made of ion-implanted
diamond. Sov. Phys. Semicond 17, 146 (1983)
28. C. Canali, G. Ottaviani, A.A. Quaranta, Drift velocity of electrons and holes and associated
anisotropic effects in silicon. J. Phys. Chem. Solids 32, 1707–1720 (1971)
29. D.K. Ferry, High-field transport in wide-bandgap semiconductors. Phys. Rev. B 12, 2361 (1975)
30. C. Canali, E. Gatti, S.F. Kozlov, P.F. Manfredi, C. Manfredotti, F. Nava, A. Quirini, Electrical
properties and performances of neutral diamond nuclear radiation detectors. Nuclear Instrum.
Methods 160, 73 (1979)
31. C. Canali, E. Gatti, S.F. Kozlov, P.F. Manfredi, C. Manfredotti, F. Nava, A. Quirini, Electronic
archive: new semiconductor materials, characteristics and properties. Available from http://
www.ioffe.ru/SVA/NSM/Semicond/index.html. Last accessed on Sept 2019
32. S.M. Sze, R.M. Ryder, Microwave avalanche diodes. Proc. IEEE. Special Issue Microw.
Semiconductor Dev. 59, 1140–1154 (1971)
33. A. Acharyya, J. Chakraborty, K. Das, S. Datta, P. De, S. Banerjee, J.P. Banerjee, Large-signal
characterization of DDR silicon IMPATTs operating up to 0.5 THz. Int. J. Microw. Wirel.
Technol. 5(5), 567–578 (2013)
34. H.K. Gummel, J.L. Blue, A small-signal theory of avalanche noise in IMPATT diodes. IEEE
Trans. Electron Dev. 14, 569–580 (1967)
35. S.K. Roy, M. Sridharan, R. Ghosh, B.B. Pal, Computer method for the dc field and carrier current
profiles in the IMPATT device starting from the field extremum in the depletion layer. in Proceedings of the 1st Conference on Numerical Analysis of Semiconductor Devices (NASECODE
I), ed. by J.H. Miller (Dublin, Ireland, 1979), pp. 266–274
36. S.K. Roy, J.P. Banerjee, S.P. Pati, A computer analysis of the distribution of high frequency
negative resistance in the depletion layer of IMPATT Diodes. in Proceedings of 4th Conference
on Numerical Analysis of Semiconductor Devices (NASECODE IV) (Dublin, Ireland, 1985),
pp. 494–500
37. J.P. Banerjee, J.F. Luy, F. Schaffler, Comparison of theoretical and experimental 60 GHz silicon
IMPATT diode performance. Electron. Lett. 27, 1049–1050 (1991)
38. A. Acharyya, M. Mukherjee, J.P. Banerjee, Effects of tunnelling current on mm-wave IMPATT
Devices. Int. J. Electron. 102(9), 1429–1456 (2015)
39. W.J. Evans, G.I. Haddad, A large-signal analysis of IMPATT diodes. IEEE Trans. Electron
Dev. 15(10), 708–717 (1968)
40. D.L. Scharfetter, H.K. Gummel, Large-signal analysis of a silicon read diode oscillator. IEEE
Trans. Electron Dev. 6(1), 64–77 (1969)
41. M.S. Gupta, R.J. Lomax, A current-excited large-signal analysis of IMPATT devices and its
circuit implementations. IEEE Trans. Electron Dev. 20, 395–399 (1973)
42. A. Acharyya, S. Banerjee, J.P. Banerjee, Effect of junction temperature on the large-signal
properties of a 94 GHz silicon based double-drift region impact avalanche transit time device.
J. Semiconduct. 34(2), 024001–0240012 (2013)