Terahertz Radiators Based on Silicon Carbide Avalanche Transit …
33
Acknowledgements The authors deeply feel and acknowledge the help and spontaneous support
rendered by the authority of IIEST, Shibpur, West Bengal, by making a suitable arrangement to
perform the research work smoothly.
References
1. T.A. Midford, R.L. Bernick, Millimeter wave CW IMPATT diodes and oscillators. IEEE Trans.
Microw. Theory Tech. 27, 483–492 (1979)
2. R.E. Goldwasser, F.E. Rosztoczy, High efficiency GaAs low-hig-low IMPATTs. Appl. Phys.
Lett. 25, 92 (1974)
3. W.W. Gray, L. Kikushima, N.P. Morentc, R.J. Wagner, Applying IMPATT power sources to
modern microwave systems. IEEE J. Solid-State Circ. 4, 409–413 (1969)
4. Y. Chang, J.M. Hellum, J.A. Paul, K.P. Weller, Millimeter-wave IMPATT sources for communication applications. in IEEE MTT-S International Microwave Symposium Digest (1977),
pp. 216–219
5. H. Eisele, Selective etching technology for 94 GHz, GaAs IMPATT diodes on diamond heat
sinks. Solid State Electron. 32(3), 253–257 (1989)
6. H. Eisele, GaAs W-band IMPATT diode for very low noise oscillations. Electron. Lett. 26(2),
109–110 (1990)
7. W.L. Chan, J. Deibel, D.M. Mittleman, Imaging with terahertz radiation. Rep. Prog. Phys. 70,
1325–1379 (2007)
8. D. Grischkowsky, S. Keiding, M. Exter, C. Fattinger, Far-infrared time-domain spectroscopy
with terahertz beams of dielectrics and semiconductors. J. Opt. Soc. Am. B 7, 2006–2015
(1990)
9. C. Debus, P.H. Bolivar, Frequency selective surfaces for high sensitivity terahertz sensing.
Appl. Phys. Lett. 91, 184102 (2007)
10. T. Yasui, T. Yasuda, K. Sawanaka, T. Araki, Terahertz paintmeter for noncontact monitoring
of thickness and drying progress in paint film. Appl. Opt. 44, 6849–6856 (2005)
11. C.D. Stoik, M.J. Bohn, J.L. Blackshire, Nondestructive evaluation of aircraft composites using
transmissive terahertz time domain spectroscopy. Opt. Expr. 16, 17039–17051 (2008)
12. A.J. Fitzgerald, B.E. Cole, P.F. Taday, Nondestructive analysis of tablet coating thicknesses
using terahertz pulsed imaging. J. Pharm. Sci. 94, 177–183 (2005)
13. P.H. Siegel, Terahertz technology in biology and medicine. IEEE Trans. Microw. Theory Tech.
52, 2438–2447 (2004)
14. P.H. Siegel, THz instruments for space. IEEE Trans. Antenn. Propag. 55, 2957–2965 (2007)
15. C. Dalle, P. Rolland, G. Lieti, Flat doping profile double-drift silicon IMPATT for reliable CW
high power high-efficiency generation in the 94-GHz window. IEEE Trans. Electr. Dev. 37,
227–236 (1990)
16. J.F. Luy, A. Casel, W. Behr, E. Kasper, A 90-GHz double-drift IMPATT diode made with Si
MBE. IEEE Trans. Electr. Dev. 34, 1084–1089 (1987)
17. M. Wollitzer, J. Buchler, F. Schafflr, J.F. Luy, D-band Si-IMPATT diodes with 300 mW CW
output power at 140 GHz. Electron. Lett. 32, 122–123 (1996)
18. D. Ghoshal, Measurement of electrical resistance of silicon single drift region IMPATT diode
based on the study of the device and mounting circuit at threshold condition. J. Electron Dev.
11, 625–631 (2011)
19. M. Mukherjee, S. Banerjee, J.P. Banerjee, Dynamic characteristics of III–V and IV–IV semiconductor based transit time devices in the terahertz regime: a comparative analysis. Terahertz
Sci. Tech. 3, 98–109 (2010)
20. M. Mukherjee, N. Mazumder, S.K. Roy, Prospects of 4H-SiC double drift region IMPATT
device as a photo-sensitive high-power source at 0.7 terahertz frequency regime. Act. Passive
Electron. Compon. 2009, 1–9 (2009)
33
Acknowledgements The authors deeply feel and acknowledge the help and spontaneous support
rendered by the authority of IIEST, Shibpur, West Bengal, by making a suitable arrangement to
perform the research work smoothly.
References
1. T.A. Midford, R.L. Bernick, Millimeter wave CW IMPATT diodes and oscillators. IEEE Trans.
Microw. Theory Tech. 27, 483–492 (1979)
2. R.E. Goldwasser, F.E. Rosztoczy, High efficiency GaAs low-hig-low IMPATTs. Appl. Phys.
Lett. 25, 92 (1974)
3. W.W. Gray, L. Kikushima, N.P. Morentc, R.J. Wagner, Applying IMPATT power sources to
modern microwave systems. IEEE J. Solid-State Circ. 4, 409–413 (1969)
4. Y. Chang, J.M. Hellum, J.A. Paul, K.P. Weller, Millimeter-wave IMPATT sources for communication applications. in IEEE MTT-S International Microwave Symposium Digest (1977),
pp. 216–219
5. H. Eisele, Selective etching technology for 94 GHz, GaAs IMPATT diodes on diamond heat
sinks. Solid State Electron. 32(3), 253–257 (1989)
6. H. Eisele, GaAs W-band IMPATT diode for very low noise oscillations. Electron. Lett. 26(2),
109–110 (1990)
7. W.L. Chan, J. Deibel, D.M. Mittleman, Imaging with terahertz radiation. Rep. Prog. Phys. 70,
1325–1379 (2007)
8. D. Grischkowsky, S. Keiding, M. Exter, C. Fattinger, Far-infrared time-domain spectroscopy
with terahertz beams of dielectrics and semiconductors. J. Opt. Soc. Am. B 7, 2006–2015
(1990)
9. C. Debus, P.H. Bolivar, Frequency selective surfaces for high sensitivity terahertz sensing.
Appl. Phys. Lett. 91, 184102 (2007)
10. T. Yasui, T. Yasuda, K. Sawanaka, T. Araki, Terahertz paintmeter for noncontact monitoring
of thickness and drying progress in paint film. Appl. Opt. 44, 6849–6856 (2005)
11. C.D. Stoik, M.J. Bohn, J.L. Blackshire, Nondestructive evaluation of aircraft composites using
transmissive terahertz time domain spectroscopy. Opt. Expr. 16, 17039–17051 (2008)
12. A.J. Fitzgerald, B.E. Cole, P.F. Taday, Nondestructive analysis of tablet coating thicknesses
using terahertz pulsed imaging. J. Pharm. Sci. 94, 177–183 (2005)
13. P.H. Siegel, Terahertz technology in biology and medicine. IEEE Trans. Microw. Theory Tech.
52, 2438–2447 (2004)
14. P.H. Siegel, THz instruments for space. IEEE Trans. Antenn. Propag. 55, 2957–2965 (2007)
15. C. Dalle, P. Rolland, G. Lieti, Flat doping profile double-drift silicon IMPATT for reliable CW
high power high-efficiency generation in the 94-GHz window. IEEE Trans. Electr. Dev. 37,
227–236 (1990)
16. J.F. Luy, A. Casel, W. Behr, E. Kasper, A 90-GHz double-drift IMPATT diode made with Si
MBE. IEEE Trans. Electr. Dev. 34, 1084–1089 (1987)
17. M. Wollitzer, J. Buchler, F. Schafflr, J.F. Luy, D-band Si-IMPATT diodes with 300 mW CW
output power at 140 GHz. Electron. Lett. 32, 122–123 (1996)
18. D. Ghoshal, Measurement of electrical resistance of silicon single drift region IMPATT diode
based on the study of the device and mounting circuit at threshold condition. J. Electron Dev.
11, 625–631 (2011)
19. M. Mukherjee, S. Banerjee, J.P. Banerjee, Dynamic characteristics of III–V and IV–IV semiconductor based transit time devices in the terahertz regime: a comparative analysis. Terahertz
Sci. Tech. 3, 98–109 (2010)
20. M. Mukherjee, N. Mazumder, S.K. Roy, Prospects of 4H-SiC double drift region IMPATT
device as a photo-sensitive high-power source at 0.7 terahertz frequency regime. Act. Passive
Electron. Compon. 2009, 1–9 (2009)