32
S. J. Mukhopadhyay et al.
Fig. 10 Changes of a P RF and b η L of Si, 3C-SiC, and diamond-based IMPATT sources versus
operating frequency plots
Table 2 Some important parameters of mm-wave and THz DDR Si, 3C-SiC, and type-IIb diamond
IMPATTs
Base
material
Parameter Design frequency, f d (GHz)
94
140
220
300
500
1000
1500
Si
J 0 (×10 8
A m −2 )
3.40
5.80
14.50
24.50
55.00
–
–
f p (GHz) 93.0
139.5
218.5
301.5
501.5
–
–
f a (GHz) 52.0
70.9
111.5
141.3
196.7
–
–
D j (µm)
35.0
25.0
20.0
15.0
10.0
–
–
3C-SiC
J 0 (×10 8
A m −2 )
6.00
16.00
30.00
55.00 104.00
135.00
–
f p (GHz) 94.40 146.20 226.30 308.80 529.50 1078.20
–
f a (GHz) 17.40
31
47.30
67.60 101.20
129.800
–
D j (µm)
35.0
25.0
20.0
15.0
10.0
5.0
–
Type-IIb
diamond
J 0 (×10 8
A m −2 )
4.00
7.50
13.00
17.00
25.00
39.00
48.00
f p (GHz) 95.6
140.0
218.0
301.0
502.0
1002.0
1501.0
f a (GHz) 49.5
99.0
144.5
192.1
283.9
469.0
704.4
D j (µm)
35.0
25.0
20.0
15.0
10.0
5.0
2.5
due to its better power generation capability at lower mm-wave frequencies. However, IMPATT sources based on both 3C-SiC and diamond are much powerful in
comparison with mm-wave and THz Si IMPATTs.