Terahertz Radiators Based on Silicon
Carbide Avalanche Transit Time
Sources—Part II: Avalanche Noise
Characteristics
S. J. Mukhopadhyay, P. Mukherjee, A. Acharyya and M. Mitra
Abstract Small-signal noise simulations have been performed to explore the
potency of avalanche transit time (ATT) oscillators based upon wide bandgap (WBG)
semiconducting substances like 3C-SiC and type-IIb diamond (C) as millimeterwave (mm-wave) and terahertz (THz) wave generators; noise characteristics of those
sources have been compared with the DDR IMPATTs on the basis of traditional substance, i.e., Si. The simulation studies show that the WBG semiconductor-based
IMPATT sources possess significantly poor noise performance than the conventional
Si-based IMPATT sources. However, significantly better RF power delivery capability of WBG IMPATT sources makes them superior than Si IMPATTs for mm-wave
and THz applications.
Keywords Avalanche noise · 3C-SiC · Diamond · IMPATT · Millimeter-wave ·
Si · Terahertz
1 Introduction
IMPATT oscillators are indigenously noisy sources for mm-wave and THz frequency
band applications [1]. The main origin of noise in IMPATT sources is the unsystematic nature of the uncovering mechanism of electron–hole pairs (EHPs) due to impact
ionization. This fact causes a significant amount of vacillations in static electric field
as well as current originated from the DC biasing of the reverse-biased IMPATT
diodes. This random fluctuation appears as a small-signal alternating component to
the DC biasing voltage even when the time-varying oscillating voltage across the
S. J. Mukhopadhyay · M. Mitra
Department of ETC, IIEST, Shibpur, Howrah, West Bengal 711103, India
P. Mukherjee
Department of Electrical Engineering, Cooch Bihar Government Engineering College, Cooch
Behar, West Bengal 736170, India
A. Acharyya (B)
Department of Electronics and Communication Engineering, Cooch Bihar Government
Engineering College, Cooch Behar, West Bengal 736170, India
e-mail: ari_besu@yahoo.co.in
© Springer Nature Singapore Pte Ltd. 2020
A. Biswas et al. (eds.), Emerging Trends in Terahertz Solid-State Physics and Devices,
https://doi.org/10.1007/978-981-15-3235-1_3
37
Carbide Avalanche Transit Time
Sources—Part II: Avalanche Noise
Characteristics
S. J. Mukhopadhyay, P. Mukherjee, A. Acharyya and M. Mitra
Abstract Small-signal noise simulations have been performed to explore the
potency of avalanche transit time (ATT) oscillators based upon wide bandgap (WBG)
semiconducting substances like 3C-SiC and type-IIb diamond (C) as millimeterwave (mm-wave) and terahertz (THz) wave generators; noise characteristics of those
sources have been compared with the DDR IMPATTs on the basis of traditional substance, i.e., Si. The simulation studies show that the WBG semiconductor-based
IMPATT sources possess significantly poor noise performance than the conventional
Si-based IMPATT sources. However, significantly better RF power delivery capability of WBG IMPATT sources makes them superior than Si IMPATTs for mm-wave
and THz applications.
Keywords Avalanche noise · 3C-SiC · Diamond · IMPATT · Millimeter-wave ·
Si · Terahertz
1 Introduction
IMPATT oscillators are indigenously noisy sources for mm-wave and THz frequency
band applications [1]. The main origin of noise in IMPATT sources is the unsystematic nature of the uncovering mechanism of electron–hole pairs (EHPs) due to impact
ionization. This fact causes a significant amount of vacillations in static electric field
as well as current originated from the DC biasing of the reverse-biased IMPATT
diodes. This random fluctuation appears as a small-signal alternating component to
the DC biasing voltage even when the time-varying oscillating voltage across the
S. J. Mukhopadhyay · M. Mitra
Department of ETC, IIEST, Shibpur, Howrah, West Bengal 711103, India
P. Mukherjee
Department of Electrical Engineering, Cooch Bihar Government Engineering College, Cooch
Behar, West Bengal 736170, India
A. Acharyya (B)
Department of Electronics and Communication Engineering, Cooch Bihar Government
Engineering College, Cooch Behar, West Bengal 736170, India
e-mail: ari_besu@yahoo.co.in
© Springer Nature Singapore Pte Ltd. 2020
A. Biswas et al. (eds.), Emerging Trends in Terahertz Solid-State Physics and Devices,
https://doi.org/10.1007/978-981-15-3235-1_3
37