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43. M. Reid, I.V. Cravetchi, R. Fedosejevs, Terahertz radiation and second-harmonic generation
from InAs: bulk versus surface electric-field-induced contributions. Phys. Rev. B. 72, 035201
(2005)
44. K. Radhanpura, S. Hargreaves, R.A. Lewis, M. Henini, The role of optical rectification in the
generation of terahertz radiation from GaBiAs. Appl. Phys. Lett. 94, 251115 (2009)
45. C.P. Vaisakh, A. Mascarenhas, R.N. Kini, THz generation mechanisms in the semiconductor
alloy, GaAs 1−x Bi x . J. Appl. Phys. 118, 165702 (2015)
46. D.L. Cortie, R.A. Lewis, The importance of scattering, surface potential, and vanguard counterpotential in terahertz emission from gallium arsenide. Appl. Phys. Lett. 100, 261601 (2012)
47. V. Paˇ cebutas, S. Stanionyt˙ e, A. Arlauskas, R. Norkus, R. Butkut˙ e, A. Geižutis et al., Terahertz
excitation spectra of GaAsBi alloys. J. Phys. D Appl. Phys. 51, 474001 (2018)
48. N.M. Burford, M.O. El-Shenawee, Review of terahertz photoconductive antenna technology.
Opt. Eng. 56, 010901 (2017)
49. M. Tani, S. Matsuura, K. Sakai, S. Nakashima, Emission characteristics of photoconductive
antennas based on low-temperature-grown GaAs and semi-insulating GaAs. Appl. Opt. 36(30),
7853 (1997)
50. B. Heshmat, M. Masnadi-Shirazi, R.B. Lewis, J. Zhang, T. Tiedje, R. Gordon et al., Enhanced
terahertz bandwidth and power from GaAsBi-based sources. Adv. Opt. Mater. 1(10), 714–719
(2013)
51. K. Bertulis, A. Krotkus, G. Aleksejenko, V. Paˇ cebutas, R. Adomaviˇ cius, G. Molis et al., GaBiAs:
a material for optoelectronic terahertz devices. Appl. Phys. Lett. 88(20), 201112 (2006)
52. V. Paˇ cebutas, A. Biˇ ci˜ unas, S. Balakauskas, A. Krotkus, G. Andriukaitis, D. Lorenc et al.,
Terahertz time-domain-spectroscopy system based on femtosecond Yb: fiber laser and GaBiAs
photoconducting components. Appl. Phys. Lett. 97, 031111 (2010)
53. A. Arlauskas, P. Svidovsky, K. Bertulis, R. Adomaviˇ cius, A. Krotkus, GaAsBi photoconductive
terahertz detector sensitivity at long excitation wavelengths. Appl. Phys. Expr. 5, 022601 (2012)
54. C.P. Vaisakh, M.K. Bhowal, S. Dhar, R.N. Kini, Enhanced terahertz emission from Bi
incorporated GaSb. J. Phys. D Appl. Phys. 51, 065112 (2018)
187
42. S.L. Dexheimer, Terahertz spectroscopy: principles and applications, principles and applications (CRC Press, Terahertz Spectroscopy, 2017), pp. 1–331
43. M. Reid, I.V. Cravetchi, R. Fedosejevs, Terahertz radiation and second-harmonic generation
from InAs: bulk versus surface electric-field-induced contributions. Phys. Rev. B. 72, 035201
(2005)
44. K. Radhanpura, S. Hargreaves, R.A. Lewis, M. Henini, The role of optical rectification in the
generation of terahertz radiation from GaBiAs. Appl. Phys. Lett. 94, 251115 (2009)
45. C.P. Vaisakh, A. Mascarenhas, R.N. Kini, THz generation mechanisms in the semiconductor
alloy, GaAs 1−x Bi x . J. Appl. Phys. 118, 165702 (2015)
46. D.L. Cortie, R.A. Lewis, The importance of scattering, surface potential, and vanguard counterpotential in terahertz emission from gallium arsenide. Appl. Phys. Lett. 100, 261601 (2012)
47. V. Paˇ cebutas, S. Stanionyt˙ e, A. Arlauskas, R. Norkus, R. Butkut˙ e, A. Geižutis et al., Terahertz
excitation spectra of GaAsBi alloys. J. Phys. D Appl. Phys. 51, 474001 (2018)
48. N.M. Burford, M.O. El-Shenawee, Review of terahertz photoconductive antenna technology.
Opt. Eng. 56, 010901 (2017)
49. M. Tani, S. Matsuura, K. Sakai, S. Nakashima, Emission characteristics of photoconductive
antennas based on low-temperature-grown GaAs and semi-insulating GaAs. Appl. Opt. 36(30),
7853 (1997)
50. B. Heshmat, M. Masnadi-Shirazi, R.B. Lewis, J. Zhang, T. Tiedje, R. Gordon et al., Enhanced
terahertz bandwidth and power from GaAsBi-based sources. Adv. Opt. Mater. 1(10), 714–719
(2013)
51. K. Bertulis, A. Krotkus, G. Aleksejenko, V. Paˇ cebutas, R. Adomaviˇ cius, G. Molis et al., GaBiAs:
a material for optoelectronic terahertz devices. Appl. Phys. Lett. 88(20), 201112 (2006)
52. V. Paˇ cebutas, A. Biˇ ci˜ unas, S. Balakauskas, A. Krotkus, G. Andriukaitis, D. Lorenc et al.,
Terahertz time-domain-spectroscopy system based on femtosecond Yb: fiber laser and GaBiAs
photoconducting components. Appl. Phys. Lett. 97, 031111 (2010)
53. A. Arlauskas, P. Svidovsky, K. Bertulis, R. Adomaviˇ cius, A. Krotkus, GaAsBi photoconductive
terahertz detector sensitivity at long excitation wavelengths. Appl. Phys. Expr. 5, 022601 (2012)
54. C.P. Vaisakh, M.K. Bhowal, S. Dhar, R.N. Kini, Enhanced terahertz emission from Bi
incorporated GaSb. J. Phys. D Appl. Phys. 51, 065112 (2018)
