Group III—Nitrides and Other
Semiconductors for Terahertz Detector
Bijit Choudhuri and Aniruddha Mondal
1 Introduction
Terahertz detector is a type of transducer device which converts the terahertz radiation
into the human interpretable signal entity. Basically, terahertz signal refers to the
signal staying at a gap between microwave and infrared in electromagnetic radiation
spectrum (wavelength range from 1 to 0.01 mm). As terahertz radiation contains
98% of photon emission since the Big Bang, the study of terahertz spectroscopy
is gaining an enormous research interest in astronomy and astrophysics [1]. Apart
from it, Terahertz spectroscopy also finds its applications in biomedical imaging,
biomolecule identification, satellite communication and food product safety analysis
to name a few [2–5].
2 Important Figures of Merit
There are some figures of merit which are very important to determine the
performance of a terahertz detector.
• Noise-equivalent power (NEP)
• Responsivity
• Response time
B. Choudhuri
Department of Electronics and Communication Engineering,
NIT Silchar, Silchar, Cachar, Assam 788010, India
A. Mondal (B)
Department of Physics, NIT Durgapur, Mahatma Gandhi Road,
A-Zone, Durgapur, West Bengal 713209, India
e-mail: aniruddhamo@gmail.com
© Springer Nature Singapore Pte Ltd. 2020
A. Biswas et al. (eds.), Emerging Trends in Terahertz Solid-State Physics and Devices,
https://doi.org/10.1007/978-981-15-3235-1_12
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