186
R. N. Kini and C. P. Vaisakh
20. M.P. Polak, P. Scharoch, R. Kudrawiec, First-principles calculations of bismuth induced
changes in the band structure of dilute Ga–V–Bi and In–V–Bi alloys: Chemical trends versus
experimental data. Semicond Sci Technol. 30(9), 094001 (2015)
21. M.K. Rajpalke, W.M. Linhart, M. Birkett, K.M. Yu, D.O. Scanlon, J. Buckeridge et al., Growth
and properties of GaSbBi alloys. Appl. Phys. Lett. 103, 142106 (2013)
22. M.P. Polak, P. Scharoch, R. Kudrawiec, J. Kopaczek, M.J. Winiarsky, W.M. Linhart et al.,
Theoretical and experimental studies of electronic band structure for GaAs 1−x Bi x . J. Phys. D
Appl. Phys. 47, 355107 (2014)
23. S. Francoeur, M.-J. Seong, A. Mascarenhas, S. Tixier, M. Adamcyk, T. Tiedje, Band gap of
GaAs 1−x Bi x , 0 < x < 3.6%. Appl. Phys. Lett. 82, 3874 (2003)
24. Z. Batool, K. Hild, T.J.C. Hosea, X. Lu, T. Tiedje, S.J. Sweeney, The electronic band structure
of GaBiAs/GaAs layers: influence of strain and band anti-crossing. J. Appl. Phys. 111, 113108
(2012)
25. J. Yoshida, T. Kita, O. Wada, K. Oe, Temperature dependence of GaAs 1−x Bi x band gap studied
by photoreflectance spectroscopy. Japanese J Appl Physics, Part 1 42A(2), 371–374 (2003)
26. K. Alberi, O.D.D. Walukiewicz, K.M.Y. Bertulis, A. Krotkus, Valence band anticrossing in
GaBi x As 1−x . Appl. Phys. Lett. 91, 051909 (2007)
27. D.P. Samajdar, S. Dhar, Estimation of Bi induced changes in the direct E 0 band gap of III–V-Bi
alloys and comparison with experimental data. Phys. B 484, 27–30 (2016)
28. M. Usman, C.A. Broderick, A. Lindsay, E.P. O’Reilly, Tight-binding analysis of the electronic
structure of dilute bismide alloys of GaP and GaAs. Phys. Rev. B. 84, 245202 (2011)
29. K. Alberi, J. Wu, W. Walukiewicz, K.M. Yu, O.D. Dubon, S.P. Watkins et al., Valence-band
anticrossing in mismatched III–V semiconductor alloys. Phys. Rev. B. 75, 045203 (2007)
30. W. Huang, K. Oe, G. Feng, M. Yoshimoto, Molecular-beam epitaxy and characteristics of
Ga N y As 1−x−y Bi x . J Appl Phys. 98(5), 053505 (2005)
31. X. Lu, D.A. Beaton, R.B. Lewis, T. Tiedje, Y. Zhang, Composition dependence of photoluminescence of GaAs 1−x Bi x alloys. Appl. Phys. Lett. 95(4), 2007–2010 (2009)
32. A.R. Mohmad, F. Bastiman, C.J. Hunter, R.D. Richards, S.J. Sweeney, J.S. Ng et al., Localization effects and band gap of GaAsBi alloys. Phys. Status Solidi. Basic Res. 251(6), 1276–1281
(2014)
33. B. Fluegel, S. Francoeur, A. Mascarenhas, S. Tixier, E.C. Young, T. Tiedje, Giant spin-orbit
bowing in GaAs 1−x Bi x . Phys. Rev. Lett. 97(6), 11–14 (2006)
34. H.X. Deng, J. Li, S.S. Li, H. Peng, J.B. Xia, L.W. Wang et al., Band crossing in isovalent
semiconductor alloys with large size mismatch: First-principles calculations of the electronic
structure of Bi and N incorporated GaAs. Phys. Rev. B—Condens. Matter. Mater. Phys. 82(19),
4–7 (2010)
35. S. Nargelas, K. Jarašiunas, K. Bertulis, V. Paˇ cebutas, Hole diffusivity in GaAsBi alloys
measured by a picosecond transient grating technique. Appl. Phys. Lett. 98(8), 082115 (2011)
36. G. Pettinari, A. Patanè, A. Polimeni, M. Capizzi, X. Lu, T. Tiedje, Bi-induced p-type
conductivity in nominally undoped Ga(AsBi). Appl. Phys. Lett. 100(9), 092109 (2012)
37. G. Pettinari, H. Engelkamp, P.C.M. Christianen, J.C. Maan, A. Polimeni, M. Capizzi et al.,
Compositional evolution of Bi-induced acceptor states in GaAs 1−x Bi x alloy. Phys. Rev. B. 83,
201201(R) (2011)
38. N. Segercrantz, J. Slotte, I. Makkonen, F. Tuomisto, I.C. Sandall, M.J. Ashwin et al., Hole
density and acceptor-type defects in MBE-grown GaSb 1−x Bi x . J. Phys. D Appl. Phys. 50,
295102 (2017)
39. J. Kopaczek, R. Kudrawiec, W. Linhart, M. Rajpalke, T. Jones, M. Ashwin et al., Low- and
high-energy photoluminescence from GaSb 1−x Bi x with 0 < x < 0.042. Appl. Phys. Expr. 7,
111202 (2014)
40. D.A. Beaton, R.B. Lewis, M. Masnadi-Shirazi, T. Tiedje, Temperature dependence of hole
mobility in GaAs 1−x Bi x alloys. J. Appl. Phys. 108, 083708 (2010)
41. R.N. Kini, A.J. Ptak, B. Fluegel, R. France, R.C. Reedy, A. Mascarenhas, Effect of Bi alloying
on the hole transport in the dilute bismide alloy GaAs 1−x Bi x . Phys. Rev. B. 83, 075307 (2011)
R. N. Kini and C. P. Vaisakh
20. M.P. Polak, P. Scharoch, R. Kudrawiec, First-principles calculations of bismuth induced
changes in the band structure of dilute Ga–V–Bi and In–V–Bi alloys: Chemical trends versus
experimental data. Semicond Sci Technol. 30(9), 094001 (2015)
21. M.K. Rajpalke, W.M. Linhart, M. Birkett, K.M. Yu, D.O. Scanlon, J. Buckeridge et al., Growth
and properties of GaSbBi alloys. Appl. Phys. Lett. 103, 142106 (2013)
22. M.P. Polak, P. Scharoch, R. Kudrawiec, J. Kopaczek, M.J. Winiarsky, W.M. Linhart et al.,
Theoretical and experimental studies of electronic band structure for GaAs 1−x Bi x . J. Phys. D
Appl. Phys. 47, 355107 (2014)
23. S. Francoeur, M.-J. Seong, A. Mascarenhas, S. Tixier, M. Adamcyk, T. Tiedje, Band gap of
GaAs 1−x Bi x , 0 < x < 3.6%. Appl. Phys. Lett. 82, 3874 (2003)
24. Z. Batool, K. Hild, T.J.C. Hosea, X. Lu, T. Tiedje, S.J. Sweeney, The electronic band structure
of GaBiAs/GaAs layers: influence of strain and band anti-crossing. J. Appl. Phys. 111, 113108
(2012)
25. J. Yoshida, T. Kita, O. Wada, K. Oe, Temperature dependence of GaAs 1−x Bi x band gap studied
by photoreflectance spectroscopy. Japanese J Appl Physics, Part 1 42A(2), 371–374 (2003)
26. K. Alberi, O.D.D. Walukiewicz, K.M.Y. Bertulis, A. Krotkus, Valence band anticrossing in
GaBi x As 1−x . Appl. Phys. Lett. 91, 051909 (2007)
27. D.P. Samajdar, S. Dhar, Estimation of Bi induced changes in the direct E 0 band gap of III–V-Bi
alloys and comparison with experimental data. Phys. B 484, 27–30 (2016)
28. M. Usman, C.A. Broderick, A. Lindsay, E.P. O’Reilly, Tight-binding analysis of the electronic
structure of dilute bismide alloys of GaP and GaAs. Phys. Rev. B. 84, 245202 (2011)
29. K. Alberi, J. Wu, W. Walukiewicz, K.M. Yu, O.D. Dubon, S.P. Watkins et al., Valence-band
anticrossing in mismatched III–V semiconductor alloys. Phys. Rev. B. 75, 045203 (2007)
30. W. Huang, K. Oe, G. Feng, M. Yoshimoto, Molecular-beam epitaxy and characteristics of
Ga N y As 1−x−y Bi x . J Appl Phys. 98(5), 053505 (2005)
31. X. Lu, D.A. Beaton, R.B. Lewis, T. Tiedje, Y. Zhang, Composition dependence of photoluminescence of GaAs 1−x Bi x alloys. Appl. Phys. Lett. 95(4), 2007–2010 (2009)
32. A.R. Mohmad, F. Bastiman, C.J. Hunter, R.D. Richards, S.J. Sweeney, J.S. Ng et al., Localization effects and band gap of GaAsBi alloys. Phys. Status Solidi. Basic Res. 251(6), 1276–1281
(2014)
33. B. Fluegel, S. Francoeur, A. Mascarenhas, S. Tixier, E.C. Young, T. Tiedje, Giant spin-orbit
bowing in GaAs 1−x Bi x . Phys. Rev. Lett. 97(6), 11–14 (2006)
34. H.X. Deng, J. Li, S.S. Li, H. Peng, J.B. Xia, L.W. Wang et al., Band crossing in isovalent
semiconductor alloys with large size mismatch: First-principles calculations of the electronic
structure of Bi and N incorporated GaAs. Phys. Rev. B—Condens. Matter. Mater. Phys. 82(19),
4–7 (2010)
35. S. Nargelas, K. Jarašiunas, K. Bertulis, V. Paˇ cebutas, Hole diffusivity in GaAsBi alloys
measured by a picosecond transient grating technique. Appl. Phys. Lett. 98(8), 082115 (2011)
36. G. Pettinari, A. Patanè, A. Polimeni, M. Capizzi, X. Lu, T. Tiedje, Bi-induced p-type
conductivity in nominally undoped Ga(AsBi). Appl. Phys. Lett. 100(9), 092109 (2012)
37. G. Pettinari, H. Engelkamp, P.C.M. Christianen, J.C. Maan, A. Polimeni, M. Capizzi et al.,
Compositional evolution of Bi-induced acceptor states in GaAs 1−x Bi x alloy. Phys. Rev. B. 83,
201201(R) (2011)
38. N. Segercrantz, J. Slotte, I. Makkonen, F. Tuomisto, I.C. Sandall, M.J. Ashwin et al., Hole
density and acceptor-type defects in MBE-grown GaSb 1−x Bi x . J. Phys. D Appl. Phys. 50,
295102 (2017)
39. J. Kopaczek, R. Kudrawiec, W. Linhart, M. Rajpalke, T. Jones, M. Ashwin et al., Low- and
high-energy photoluminescence from GaSb 1−x Bi x with 0 < x < 0.042. Appl. Phys. Expr. 7,
111202 (2014)
40. D.A. Beaton, R.B. Lewis, M. Masnadi-Shirazi, T. Tiedje, Temperature dependence of hole
mobility in GaAs 1−x Bi x alloys. J. Appl. Phys. 108, 083708 (2010)
41. R.N. Kini, A.J. Ptak, B. Fluegel, R. France, R.C. Reedy, A. Mascarenhas, Effect of Bi alloying
on the hole transport in the dilute bismide alloy GaAs 1−x Bi x . Phys. Rev. B. 83, 075307 (2011)