Terahertz Emission Mechanisms in III–V Semiconductors …
185
transmitted spectra. These two peaks give rise to two kinds of oscillations, (i) a slow
oscillation with a period of ~4 ps and (ii) a fast oscillation with a period of ~1 ps.
As one can see, the fast oscillations are much more visible in the case of THz generation using GaAsBi compared to iPCA, due to the higher bandwidth of GaAsBi
emitter. This demonstrates the feasibility of GaSbBi and GaAsBi alloy emitters for
broadband THz-TDS applications.
References
1. R.W. Boyd, Nonlinear Optics. Nonlinear Optics. Elsevier Inc. (2008)
2. R.B. Darling, Defect-state occupation, fermi-level pinning, and illumination effects on free
semiconductor surfaces. Phys. Rev. B. 43(5), 4071–4083 (1991)
3. W.H. Brattain, J. Bardeen, Surface properties of germanium. Am. Teleph. Telegr. Co. 32, 1
(1952)
4. J.N. Heyman, N. Coates, A. Reinhardt, G. Strasser, Diffusion and drift in terahertz emission at
GaAs surfaces. Appl. Phys. Lett. 83(26), 5476–5548 (2003)
5. X.C. Zhang, J. Xu, Introduction to THz Wave Photonics, Introduction to THz Wave Photonics
(Springer, US, 2010), pp. 1–246
6. A. Arlauskas, A. Krotkus, THz excitation spectra of AIIIBV semiconductors. Semicond. Sci.
Technol. 27, 115015 (2012)
7. P. Gu, M. Tani, S. Kono, K. Sakai, X.C. Zhang, Study of terahertz radiation from InAs and
InSb. J. Appl. Phys. 91(9), 5533–5537 (2002)
8. I. Wilke, R. Ascazubi, H. Lu, W.J. Schaff, Terahertz emission from silicon and magnesium
doped indium nitride. Appl. Phys. Lett. 93(22), 22113 (2008)
9. R. Ascazubi, I. Wilke, K.J. Kim, P. Dutta, Terahertz emission from Ga 1−x In x Sb. Phys. Rev. B.
74, 075323 (2006)
10. R. Ascázubi, C. Shneider, I. Wilke, R. Pino, P.S. Dutta, Enhanced terahertz emission from
impurity compensated GaSb. Phys. Rev. B—Condens. Matter. Mater. Phys. 72(4), 045328
(2005)
11. S. Kono, P. Gu, M. Tani, K. Sakai, Temperature dependence of terahertz radiation from n-type
InSb and n-type InAs surfaces. Appl. Phys. B Lasers Opt. 71(6), 901–904 (2000)
12. R. Adomaviˇ cius, A. Urbanowicz, G. Molis, A. Krotkus, E. Šatkovskis, Terahertz emission from
p-InAs due to the instantaneous polarization. Appl. Phys. Lett. 85(13), 2463–2465 (2004)
13. Wang L, Zhang L, Yue L, Liang D, Chen X, Li Y, et al. Novel dilute bismide, epitaxy, physical
properties and device application. Crystals [Internet]. 7(3):63 (2017). Available from http://
www.mdpi.com/2073-4352/7/3/63
14. R.F. Davis, III–V nitrides for electronic and optoelectronic applications. Proc. IEEE 79(5),
702–712 (1991)
15. I. Marko, S.J. Sweeney, Progress towards III–V-bismide alloys for near- and mid-infrared laser
diodes. IEEE J. Sel. Top. Quantum Electron. 23(6), 150512 (2017)
16. K. Oe, H. Okamoto, New semiconductor alloy GaAs 1−x Bi x grown by metal organic vapor
phase epitaxy. Jpn. J. Appl. Phys. 37(11), 1283–1285 (1998)
17. Y. Takehara, M. Yoshimoto, W. Huang, J. Saraie, O.E. Kunishige, A. Chayahara et al., Lattice
distortion of GaAsBi alloy grown on GaAs by molecular beam epitaxy. Japan. J. Appl. Phys.
Part 1 45(1A), 67–69 (2006)
18. S. Tixier, M. Adamcyk, T. Tiedje, S. Francoeur, A. Mascarenhas, P. Wei et al., Molecular beam
epitaxy growth of GaAs 1−x Bi x . Appl. Phys. Lett. 82(14), 2245–2247 (2003)
19. K.M. Yu, S.V. Novikov, R. Broesler, A.X. Levander, Z. Liliental-Weber, F. Luckert et al., GaNAs
alloys over the whole composition range grown on crystalline and amorphous substrates. Phys.
Status Solidi. Curr. Top Solid State Phys. 8(7–8), 2503–2505 (2011)
185
transmitted spectra. These two peaks give rise to two kinds of oscillations, (i) a slow
oscillation with a period of ~4 ps and (ii) a fast oscillation with a period of ~1 ps.
As one can see, the fast oscillations are much more visible in the case of THz generation using GaAsBi compared to iPCA, due to the higher bandwidth of GaAsBi
emitter. This demonstrates the feasibility of GaSbBi and GaAsBi alloy emitters for
broadband THz-TDS applications.
References
1. R.W. Boyd, Nonlinear Optics. Nonlinear Optics. Elsevier Inc. (2008)
2. R.B. Darling, Defect-state occupation, fermi-level pinning, and illumination effects on free
semiconductor surfaces. Phys. Rev. B. 43(5), 4071–4083 (1991)
3. W.H. Brattain, J. Bardeen, Surface properties of germanium. Am. Teleph. Telegr. Co. 32, 1
(1952)
4. J.N. Heyman, N. Coates, A. Reinhardt, G. Strasser, Diffusion and drift in terahertz emission at
GaAs surfaces. Appl. Phys. Lett. 83(26), 5476–5548 (2003)
5. X.C. Zhang, J. Xu, Introduction to THz Wave Photonics, Introduction to THz Wave Photonics
(Springer, US, 2010), pp. 1–246
6. A. Arlauskas, A. Krotkus, THz excitation spectra of AIIIBV semiconductors. Semicond. Sci.
Technol. 27, 115015 (2012)
7. P. Gu, M. Tani, S. Kono, K. Sakai, X.C. Zhang, Study of terahertz radiation from InAs and
InSb. J. Appl. Phys. 91(9), 5533–5537 (2002)
8. I. Wilke, R. Ascazubi, H. Lu, W.J. Schaff, Terahertz emission from silicon and magnesium
doped indium nitride. Appl. Phys. Lett. 93(22), 22113 (2008)
9. R. Ascazubi, I. Wilke, K.J. Kim, P. Dutta, Terahertz emission from Ga 1−x In x Sb. Phys. Rev. B.
74, 075323 (2006)
10. R. Ascázubi, C. Shneider, I. Wilke, R. Pino, P.S. Dutta, Enhanced terahertz emission from
impurity compensated GaSb. Phys. Rev. B—Condens. Matter. Mater. Phys. 72(4), 045328
(2005)
11. S. Kono, P. Gu, M. Tani, K. Sakai, Temperature dependence of terahertz radiation from n-type
InSb and n-type InAs surfaces. Appl. Phys. B Lasers Opt. 71(6), 901–904 (2000)
12. R. Adomaviˇ cius, A. Urbanowicz, G. Molis, A. Krotkus, E. Šatkovskis, Terahertz emission from
p-InAs due to the instantaneous polarization. Appl. Phys. Lett. 85(13), 2463–2465 (2004)
13. Wang L, Zhang L, Yue L, Liang D, Chen X, Li Y, et al. Novel dilute bismide, epitaxy, physical
properties and device application. Crystals [Internet]. 7(3):63 (2017). Available from http://
www.mdpi.com/2073-4352/7/3/63
14. R.F. Davis, III–V nitrides for electronic and optoelectronic applications. Proc. IEEE 79(5),
702–712 (1991)
15. I. Marko, S.J. Sweeney, Progress towards III–V-bismide alloys for near- and mid-infrared laser
diodes. IEEE J. Sel. Top. Quantum Electron. 23(6), 150512 (2017)
16. K. Oe, H. Okamoto, New semiconductor alloy GaAs 1−x Bi x grown by metal organic vapor
phase epitaxy. Jpn. J. Appl. Phys. 37(11), 1283–1285 (1998)
17. Y. Takehara, M. Yoshimoto, W. Huang, J. Saraie, O.E. Kunishige, A. Chayahara et al., Lattice
distortion of GaAsBi alloy grown on GaAs by molecular beam epitaxy. Japan. J. Appl. Phys.
Part 1 45(1A), 67–69 (2006)
18. S. Tixier, M. Adamcyk, T. Tiedje, S. Francoeur, A. Mascarenhas, P. Wei et al., Molecular beam
epitaxy growth of GaAs 1−x Bi x . Appl. Phys. Lett. 82(14), 2245–2247 (2003)
19. K.M. Yu, S.V. Novikov, R. Broesler, A.X. Levander, Z. Liliental-Weber, F. Luckert et al., GaNAs
alloys over the whole composition range grown on crystalline and amorphous substrates. Phys.
Status Solidi. Curr. Top Solid State Phys. 8(7–8), 2503–2505 (2011)