Heterostructure Devices for THz Signal Recognition
119
6. Y. Tsuda, T. Komori, A. El Fatimy, T. Suemitsu, T. Otsuji, Application of plasmonic microchip
emitters to broadband terahertz spectroscopic measurement. J. Opt. Soc. Am. B 26, A52–A57
(2009)
7. A.K. Geim, K.S. Novoselov, The rise of graphene. Nature Mat. 6, 183–191 (2007)
8. V. Ryzhii, A. Satou, T. Otsuji, Plasma waves in two-dimensional electron-hole system in gated
graphene heterostructures. J. Appl. Phys. 101, 024509 (2007)
9. V.V. Popov, TYu. Bagaeva, T. Otsuji, V. Ryzhii, Oblique terahertz plasmons in graphene
nanoribbon arrays. Phys. Rev. B 81, 073404 (2010)
10. T. Watanabe, K. Akagawa, Y. Tanimoto, D. Coquillat, W. M. Knap, T. Otsuji, Terahertz imaging
with InP high-electron-mobility transistors, in SPIE Defense, Security & Sensing, Proc. SPIE,
vol 8023, p. 802325 (2011)
11. K. Akagawa, S. Fukuda, T. Suemitsu, T. Otsuji, H. Yokohama, G. Araki, Impact of T-gate
electrode on gate capacitance in In 0.7 Ga 0.3 As HEMTs. Phys. Status Solidi C 8, 300–302 (2011)
12. From http://www.teraview.com/ab_imageLibrary.asp
13. M. Smith, S.J. Liu, M.Y. Kao, P. Ho, S.C. Wang, K.H.G. Duh, S.T. Fu, P.C. Chao, W-band high
efficiency InP-based power HEMT with 600 GHz fmax. IEEE Microwave Guided Wave Lett.
5, 230–232 (1995)
14. M.J.W. Rodwell (ed.), High Speed Integrated Circuit Technology: Towards 100 GHZ Logic
(World Scientific, Singapore, 2001)
15. W. Hafez, M. Feng, Experimental demonstration of pseudomorphic heterojunction bipolar
transistors with cutoff frequencies above 600 GHz. Appl. Phys. Lett. 86, 152101 (2005)
16. W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Bouef, T. Skotnicki, D.
Maude, S. Rumyantsev, M.S. Shur, Plasma wave detection of millimeter wave radiation by
silicon field effect transistors. Appl. Phys. Lett. 85(4), 675–677 (2004)
17. G. Dehlinger, L. Diehl, U. Gennser, H. Sigg, J. Faist, K. Ensslin, D. Grützmacher, E. Müller,.
Dehlinger, L. Diehl, U. Gennser, H. Sigg, J. Faist, K. Ensslin, D. Grützmacher, E. Müller,
Science, pp. 2277–2280 (2000)
18. R. Kohler, A. Tredicucci, F. Beltram, H.E. Beere, E.H. Linfield, A.G. Davies, D.A. Ritchie,
R.C. Iotti, F. Rossi, Terahertz semiconductor-heterostructure laser. Nature 417, 156–159 (2002)
19. B.S. Williams, S. Kumar, Q. Hu, J.L. Reno, Operation of terahertz quantum-cascade lasers at
164 K in pulsed mode and at 117 K in continuous-wave mode. Opt. Express 13, 3331–3339
(2005)
20. G. Scalari, N. Hoyler, M. Giovannini, J. Faist, Terahertz bound-tocontinuum quantum-cascade
lasers based on optical phonon scattering extraction. Appl. Phys. Lett. 86, 181101 (2005)
21. G. Scalari, S. Blaser, J. Faist, H. Beere, E. Linfield, D. Ritchie, G. Davies, Phys. Rev. Lett. 93,
237403 (2004)
22. http://www.lasercomponents.de/wwwuk/products/quantum/main.htm
23. G. Dehlinger, L. Diehl, U. Gennser, H. Sigg, J. Faist, K. Ensslin, D. Grützmacher, E. Müller,
Science 290, 2277 (2000)
24. J. Faist et al., Quantum cascade laser. Science 264, 553–556 (1994)
25. B. Mirzaei, A. Rostami, H. Baghban, Terahertz dual-wavelength quantum cascade laser based
on GaN active region. Opt. Laser Technol. 44, 378–383 (2012)
26. E. Bellotti et al., Monte Carlo simulation of terahertz quantum cascade laser structures based
on wide-bandgap semiconductors. J. Appl. Phys. 105, 113103 (2009)
27. E. Bellotti et al., Monte Carlo study of GaN versus GaAs terahertz quantum cascade structures.
Appl. Phys. Lett. 92, 101112 (2008)
28. F. Sudradjat et al., Sequential tunneling transport characteristics of GaN/AlGaN coupledquantum-well structures. J. Appl. Phys. 108, 103704 (2010)
29. W. Terashima, H. Hirayama, GaN-based terahertz quantum cascade lasers. Proc. SPIE 9483,
948304 (2015)
30. D. Turchinovich et al., Ultrafast polarization dynamics in biased quantum wells under strong
femtosecond optical excitation. Phys. Rev. B 68, 241307 (2003)
31. D. Turchinovich, B.S. Monozon, P.U. Jepsen, Role of dynamical screening in excitation kinetics
of biased quantum wells: nonlinear absorption and ultrabroadband terahertz emission. J. Appl.
Phys. 99, 013510 (2006)
119
6. Y. Tsuda, T. Komori, A. El Fatimy, T. Suemitsu, T. Otsuji, Application of plasmonic microchip
emitters to broadband terahertz spectroscopic measurement. J. Opt. Soc. Am. B 26, A52–A57
(2009)
7. A.K. Geim, K.S. Novoselov, The rise of graphene. Nature Mat. 6, 183–191 (2007)
8. V. Ryzhii, A. Satou, T. Otsuji, Plasma waves in two-dimensional electron-hole system in gated
graphene heterostructures. J. Appl. Phys. 101, 024509 (2007)
9. V.V. Popov, TYu. Bagaeva, T. Otsuji, V. Ryzhii, Oblique terahertz plasmons in graphene
nanoribbon arrays. Phys. Rev. B 81, 073404 (2010)
10. T. Watanabe, K. Akagawa, Y. Tanimoto, D. Coquillat, W. M. Knap, T. Otsuji, Terahertz imaging
with InP high-electron-mobility transistors, in SPIE Defense, Security & Sensing, Proc. SPIE,
vol 8023, p. 802325 (2011)
11. K. Akagawa, S. Fukuda, T. Suemitsu, T. Otsuji, H. Yokohama, G. Araki, Impact of T-gate
electrode on gate capacitance in In 0.7 Ga 0.3 As HEMTs. Phys. Status Solidi C 8, 300–302 (2011)
12. From http://www.teraview.com/ab_imageLibrary.asp
13. M. Smith, S.J. Liu, M.Y. Kao, P. Ho, S.C. Wang, K.H.G. Duh, S.T. Fu, P.C. Chao, W-band high
efficiency InP-based power HEMT with 600 GHz fmax. IEEE Microwave Guided Wave Lett.
5, 230–232 (1995)
14. M.J.W. Rodwell (ed.), High Speed Integrated Circuit Technology: Towards 100 GHZ Logic
(World Scientific, Singapore, 2001)
15. W. Hafez, M. Feng, Experimental demonstration of pseudomorphic heterojunction bipolar
transistors with cutoff frequencies above 600 GHz. Appl. Phys. Lett. 86, 152101 (2005)
16. W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Bouef, T. Skotnicki, D.
Maude, S. Rumyantsev, M.S. Shur, Plasma wave detection of millimeter wave radiation by
silicon field effect transistors. Appl. Phys. Lett. 85(4), 675–677 (2004)
17. G. Dehlinger, L. Diehl, U. Gennser, H. Sigg, J. Faist, K. Ensslin, D. Grützmacher, E. Müller,.
Dehlinger, L. Diehl, U. Gennser, H. Sigg, J. Faist, K. Ensslin, D. Grützmacher, E. Müller,
Science, pp. 2277–2280 (2000)
18. R. Kohler, A. Tredicucci, F. Beltram, H.E. Beere, E.H. Linfield, A.G. Davies, D.A. Ritchie,
R.C. Iotti, F. Rossi, Terahertz semiconductor-heterostructure laser. Nature 417, 156–159 (2002)
19. B.S. Williams, S. Kumar, Q. Hu, J.L. Reno, Operation of terahertz quantum-cascade lasers at
164 K in pulsed mode and at 117 K in continuous-wave mode. Opt. Express 13, 3331–3339
(2005)
20. G. Scalari, N. Hoyler, M. Giovannini, J. Faist, Terahertz bound-tocontinuum quantum-cascade
lasers based on optical phonon scattering extraction. Appl. Phys. Lett. 86, 181101 (2005)
21. G. Scalari, S. Blaser, J. Faist, H. Beere, E. Linfield, D. Ritchie, G. Davies, Phys. Rev. Lett. 93,
237403 (2004)
22. http://www.lasercomponents.de/wwwuk/products/quantum/main.htm
23. G. Dehlinger, L. Diehl, U. Gennser, H. Sigg, J. Faist, K. Ensslin, D. Grützmacher, E. Müller,
Science 290, 2277 (2000)
24. J. Faist et al., Quantum cascade laser. Science 264, 553–556 (1994)
25. B. Mirzaei, A. Rostami, H. Baghban, Terahertz dual-wavelength quantum cascade laser based
on GaN active region. Opt. Laser Technol. 44, 378–383 (2012)
26. E. Bellotti et al., Monte Carlo simulation of terahertz quantum cascade laser structures based
on wide-bandgap semiconductors. J. Appl. Phys. 105, 113103 (2009)
27. E. Bellotti et al., Monte Carlo study of GaN versus GaAs terahertz quantum cascade structures.
Appl. Phys. Lett. 92, 101112 (2008)
28. F. Sudradjat et al., Sequential tunneling transport characteristics of GaN/AlGaN coupledquantum-well structures. J. Appl. Phys. 108, 103704 (2010)
29. W. Terashima, H. Hirayama, GaN-based terahertz quantum cascade lasers. Proc. SPIE 9483,
948304 (2015)
30. D. Turchinovich et al., Ultrafast polarization dynamics in biased quantum wells under strong
femtosecond optical excitation. Phys. Rev. B 68, 241307 (2003)
31. D. Turchinovich, B.S. Monozon, P.U. Jepsen, Role of dynamical screening in excitation kinetics
of biased quantum wells: nonlinear absorption and ultrabroadband terahertz emission. J. Appl.
Phys. 99, 013510 (2006)