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designs, in Proc. SPIE, pp. 11–13 (2015)
34. S. Miho, T.-T. Lin, H. Hirayama, 1.9 THz selective injection design quantum cascade laser
operating at extreme higher temperature above the kBT line. Phys. Status Solidi C 10, 1448–
1451 (2013)
35. T.-T. Lin, H. Hirayama, Improvement of operation temperature in GaAs/AlGaAs THz-QCLs
by utilizing high Al composition barrier. Phys. Status Solidi C 10, 1430–1433 (2013)
36. T.-T. Lin, L. Ying, H. Hirayama, Threshold current density reduction by utilizing high-alcomposition barriers in 3.7 THz GaAs/Al x Ga 1−x As quantum cascade lasers. Appl. Phys.
Express 5, 012101 (2012)
37. C. Edmunds et al., Terahertz intersubband absorption in non-polar mplane AlGaN/GaN
quantum wells. Appl. Phys. Lett. 105, 021109 (2014)
38. M. Beeler, E. Trichas, E. Monroy, III-nitride semiconductors for intersubband optoelectronics:
a review. Semicond. Sci. Technol. 28, 074022 (2013)
39. M. Beeler et al., Pseudo-square AlGaN/GaN quantum wells for terahertz absorption. Appl.
Phys. Lett. 105, 131106 (2014)
40. H. Durmaz et al., Terahertz intersubband photodetectors based on semi-polar GaN/AlGaN
heterostructures. Appl. Phys. Lett. 108, 201102 (2016)
41. J.D. Sun et al., High-responsivity, low-noise, room-temperature, self-mixing terahertz detector
realized using floating antennas on a GaN-based field-effect transistor. Appl. Phys. Lett. 100,
013506 (2012)
42. R.A. Lewis et al., Probing and modelling the localized self-mixing in a GaN/AlGaN field-effect
terahertz detector. Appl. Phys. Lett. 100, 173513 (2012)
43. H. Hou et al., Modelling of GaN HEMTs as terahertz detectors based on self-mixing. Proc.
Eng. 141, 98–102 (2016)
A. Bhattacharyya et al.
32. H. Hirayama et al., Recent progress and future prospects of THz quantum-cascade lasers. Proc.
SPIE 9382, 938217 (2015)
33. W. Terashima, H. Hirayama, Terahertz frequency emission with novel quantum cascade laser
designs, in Proc. SPIE, pp. 11–13 (2015)
34. S. Miho, T.-T. Lin, H. Hirayama, 1.9 THz selective injection design quantum cascade laser
operating at extreme higher temperature above the kBT line. Phys. Status Solidi C 10, 1448–
1451 (2013)
35. T.-T. Lin, H. Hirayama, Improvement of operation temperature in GaAs/AlGaAs THz-QCLs
by utilizing high Al composition barrier. Phys. Status Solidi C 10, 1430–1433 (2013)
36. T.-T. Lin, L. Ying, H. Hirayama, Threshold current density reduction by utilizing high-alcomposition barriers in 3.7 THz GaAs/Al x Ga 1−x As quantum cascade lasers. Appl. Phys.
Express 5, 012101 (2012)
37. C. Edmunds et al., Terahertz intersubband absorption in non-polar mplane AlGaN/GaN
quantum wells. Appl. Phys. Lett. 105, 021109 (2014)
38. M. Beeler, E. Trichas, E. Monroy, III-nitride semiconductors for intersubband optoelectronics:
a review. Semicond. Sci. Technol. 28, 074022 (2013)
39. M. Beeler et al., Pseudo-square AlGaN/GaN quantum wells for terahertz absorption. Appl.
Phys. Lett. 105, 131106 (2014)
40. H. Durmaz et al., Terahertz intersubband photodetectors based on semi-polar GaN/AlGaN
heterostructures. Appl. Phys. Lett. 108, 201102 (2016)
41. J.D. Sun et al., High-responsivity, low-noise, room-temperature, self-mixing terahertz detector
realized using floating antennas on a GaN-based field-effect transistor. Appl. Phys. Lett. 100,
013506 (2012)
42. R.A. Lewis et al., Probing and modelling the localized self-mixing in a GaN/AlGaN field-effect
terahertz detector. Appl. Phys. Lett. 100, 173513 (2012)
43. H. Hou et al., Modelling of GaN HEMTs as terahertz detectors based on self-mixing. Proc.
Eng. 141, 98–102 (2016)