118
A. Bhattacharyya et al.
Fig. 11 Representation of the antenna configurations through a conventional symmetrical gate
with b recommended asymmetrical gate. c Cross-sectional outlook of the projected GaN high
electron mobility transistor detection unit. Reproduced from [43], by authorization of Elsevier Ltd.
publication
References
1. M. Dyakonov, M. Shur, Shallow water analogy for a ballistic field effect transistor: new
mechanism of plasma wave generation by dc current. Phys. Rev. Lett. 71, 2465–2468 (1993)
2. M. Dyakonov, M. Shur, Detection, mixing, and frequency multiplication of terahertz radiation
by two-dimensional electronic fluid. IEEE Trans. Electron Devices 43, 380–387 (1996)
3. W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Lusakowski, K. Karpierz,
M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y.M. Meziani, T. Otsuji, Field
effect transistors for terahertz detection: physics and first imaging applications. J. Infrared
Milli. Terahz Waves 30, 1319–1337 (2009)
4. W. Knap, S. Nadar, H. Videlier, S. Boubanga-Tombet, D. Coquillat, N. Dyakonova, F. Teppe,
K. Karpierz, J. Łusakowski, M. Sakowicz, I. Kasalynas, D. Seliuta, G. Valusis, T. Otsuji, Y.
Meziani, A. El Fatimy, S. Vandenbrouk, K. Madjour, D. Théron, C. Gaquière, Field effect
transistors for terahertz detection and emission. J. Infrared Milli. Terahz 32, 618–628 (2011)
5. T. Otsuji, Y.M. Meziani, T. Nishimura, T. Suemitsu, W. Knap, E. Sano, T. Asano, V.V. Popov,
“Emission of terahertz radiation from dualgrating- gates plasmon-resonant emitters fabricated
with InGaP/InGaAs/GaAs material systems. J. Phys.: Condens. Matters 20, 384206 (2008)
A. Bhattacharyya et al.
Fig. 11 Representation of the antenna configurations through a conventional symmetrical gate
with b recommended asymmetrical gate. c Cross-sectional outlook of the projected GaN high
electron mobility transistor detection unit. Reproduced from [43], by authorization of Elsevier Ltd.
publication
References
1. M. Dyakonov, M. Shur, Shallow water analogy for a ballistic field effect transistor: new
mechanism of plasma wave generation by dc current. Phys. Rev. Lett. 71, 2465–2468 (1993)
2. M. Dyakonov, M. Shur, Detection, mixing, and frequency multiplication of terahertz radiation
by two-dimensional electronic fluid. IEEE Trans. Electron Devices 43, 380–387 (1996)
3. W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Lusakowski, K. Karpierz,
M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y.M. Meziani, T. Otsuji, Field
effect transistors for terahertz detection: physics and first imaging applications. J. Infrared
Milli. Terahz Waves 30, 1319–1337 (2009)
4. W. Knap, S. Nadar, H. Videlier, S. Boubanga-Tombet, D. Coquillat, N. Dyakonova, F. Teppe,
K. Karpierz, J. Łusakowski, M. Sakowicz, I. Kasalynas, D. Seliuta, G. Valusis, T. Otsuji, Y.
Meziani, A. El Fatimy, S. Vandenbrouk, K. Madjour, D. Théron, C. Gaquière, Field effect
transistors for terahertz detection and emission. J. Infrared Milli. Terahz 32, 618–628 (2011)
5. T. Otsuji, Y.M. Meziani, T. Nishimura, T. Suemitsu, W. Knap, E. Sano, T. Asano, V.V. Popov,
“Emission of terahertz radiation from dualgrating- gates plasmon-resonant emitters fabricated
with InGaP/InGaAs/GaAs material systems. J. Phys.: Condens. Matters 20, 384206 (2008)