On the Quantum Capacitance of Quantum Wire Field-Effect …
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parameters as given in [41] using (a) Eq. 5 (green), (d) Eq. 6b (red), and (e) Eq. 7b
(blue). From Fig. 18, it appears that the normalized C g decreases with increasing gate
voltage in quantized oscillatory fashion for all cases as consider in this case. The rate
of oscillatory decrease changes from one type of band model to another type. The
normalized C g in QWFETs made of Ga 1−x Al x As with V g as the independent variable
has been premeditated in Fig. 19 by taking the different values of the energy band
parameters as given in [41] using (a) Eq. 5 (green), (d) Eq. 6b (red), and (e) Eq. 7b
(blue).
From Fig. 19, it appears that the normalized C g decreases with increasing gate
voltage in quantized oscillatory fashion for all cases as consider in this case. The rate
of oscillatory decrease changes from one type of band model to another type. The
normalized C g in QWFETs made of In 1−x Ga x As y P 1−y with V g as the independent
variable has been premeditated in Fig. 20 by taking the different values of the energy
band parameters as given in [41] using (a) Eq. 5 (green), (d) Eq. 6b (red), and
Fig. 19 The normalized C g
in QWFETs made of
Ga 1−x Al x As with V g as the
independent variable has
been premeditated using (a)
Eq. 5 (green), (d) Eq. 6b
(red), and (e) Eq. 7b (blue)
Fig. 20 The normalized C g
in QWFETs made of
In 1−x Ga x As y P 1−y with V g
as the independent variable
has been premeditated using
(a) Eq. 5 (green), (d) Eq. 6b
(red), and (e) Eq. 7b (blue)