104
A. H. Seikh et al.
(e) Eq. 7b (blue). From Fig. 20, it appears that the normalized C g decreases with
increasing gate voltage in quantized oscillatory fashion for all cases as consider in
this case. The rate of oscillatory decrease changes from one type of band model to
another type.
We conclude that the impact of investigation in this context is rather large, since the
C g in QWFET is a very important quantity for the purpose of technical application
and experimental studies of physical properties of quantum-confined QWFET. It
should be noted that for rigorous treatment the multicarrier effects and therefore
the contribution of the non-idealities should be considered; our simplified approach
shows the fundamental qualitative behavior of the C g in QWFETs of small energy
gap materials, since these compounds obey the model of Kane, wherever as our
study is predicted by extending
k.
p theory.
References
1. K.P. Ghatak, M. Mondal, J. Appl. Phys. 70, 299 (1991)
2. K.P. Ghatak, S.N. Biswas, J. Vac. Sci. Technol. 7B, 104 (1989)
3. B. Mitra, K.P. Ghatak, J. Solid-State Electron. 32, 177 (1989)
4. K.P. Ghatak, M. Mondal, J. Appl. Phys. 62, 922 (1987)
5. M. Mondal, K.P. Ghatak, J. Magn. Magn. Mater. 62, 115 (1986)
6. M. Mondal, K.P. Ghatak, J. Phys. Scr. 31, 613 (1985)
7. K.P. Ghatak, M. Mondal, J. Zeitschrift für Physik B Condens Matter. 64, 223 (1986)
8. K.P. Ghatak, S.N. Biswas, J. Solid-State Electron. 37, 1437 (1994)
9. K.P. Ghatak, N. Chattopadhyay, M. Mondal, J. Appl. Phys. A 48, 365 (1989)
10. K.P. Ghatak, M. Mondal, Z. fur Physik B 64, 223 (1986)
11. K.P. Ghatak, S.N. Biswas, Sol. State Electron. 37, 1437 (1994)
12. D.R. Choudhury, A.K. Chowdhury, K.P. Ghatak, A.N. Chakravarti, Phys. Stat. Sol. (b) 98,
K141 (1980)
13. A.N. Chakravarti, A.K. Chowdhury, K.P. Ghatak, Phys. Stat. Sol. (a) 63, K97 (1981)
14. M. Mondal, K.P. Ghatak, Acta Phys. Polon. A 67, 983 (1985); M. Mondal, K.P. Ghatak, Phys.
Stat. Sol. (b) 128, K21 (1985)
15. M. Mondal, K.P. Ghatak, Phys. Stat. Sol. (a) 93, 377 (1986)
16. K.P. Ghatak, M. Mondal, Phys. Stat. Sol. (b) 135, 819 (1986)
17. M. Mondal, K.P. Ghatak, Phys. Stat. Sol. (b) 139, 185 (1987)
18. K.P. Ghatak, N. Chattopadhyay, S.N. Biswas, OE/Fibers’ 87, 203 (1987)
19. K.P. Ghatak, N. Chatterjee, M. Mondal, Phys. Stat. Sol. (b) 139, K25 (1987)
20. K.P. Ghatak, M. Mondal, Phys. Stat. Sol. (b) 148, 645 (1988); K.P. Ghatak, A. Ghosal, Phys.
Stat. Sol. (b) 151, K135 (1989); K P. Ghatak, N. Chattopadhyay, M. Mondal, Phys. A 48, 365
(1989)
21. P.K. Das, K.P. Ghatak, J. Nanosci. Nanotechnol. 19, 2909 (2019); K.P. Ghatak, S. Chakrabarti,
B. Chatterjee, Mater. Focus 7, 361 (2018); K.P. Ghatak, S. Chakrabarti, B. Chatterjee, P.K.
Das, P. Dutta, A. Halder, Mater. Focus 7, 390 (2018); B. Chatterjee, N. Debbarma, M. Mitra,
T. Datta, K.P. Ghatak, J. Nanosci. Nanotechnol. 17, 3352 (2017)
22. K.P. Ghatak, D. De, Mater. Focus 6, 114 (2017); P.K. Das, P. Dutta, A. Halder, J. Pal, N.
Debbarma, S. Debbarma, K.P. Ghatak, Mater. Focus 6, 167 (2017); P.K. Das, P. Dutta, A.
Halder, R. Bhattacharjee, K.P. Ghatak, Mater. Focus 6, 133 (2017); R. Bhattacharjee, K.P.
Ghatak, J. Nanosci. Nanotechnol. 17, 640 (2017)
A. H. Seikh et al.
(e) Eq. 7b (blue). From Fig. 20, it appears that the normalized C g decreases with
increasing gate voltage in quantized oscillatory fashion for all cases as consider in
this case. The rate of oscillatory decrease changes from one type of band model to
another type.
We conclude that the impact of investigation in this context is rather large, since the
C g in QWFET is a very important quantity for the purpose of technical application
and experimental studies of physical properties of quantum-confined QWFET. It
should be noted that for rigorous treatment the multicarrier effects and therefore
the contribution of the non-idealities should be considered; our simplified approach
shows the fundamental qualitative behavior of the C g in QWFETs of small energy
gap materials, since these compounds obey the model of Kane, wherever as our
study is predicted by extending
k.
p theory.
References
1. K.P. Ghatak, M. Mondal, J. Appl. Phys. 70, 299 (1991)
2. K.P. Ghatak, S.N. Biswas, J. Vac. Sci. Technol. 7B, 104 (1989)
3. B. Mitra, K.P. Ghatak, J. Solid-State Electron. 32, 177 (1989)
4. K.P. Ghatak, M. Mondal, J. Appl. Phys. 62, 922 (1987)
5. M. Mondal, K.P. Ghatak, J. Magn. Magn. Mater. 62, 115 (1986)
6. M. Mondal, K.P. Ghatak, J. Phys. Scr. 31, 613 (1985)
7. K.P. Ghatak, M. Mondal, J. Zeitschrift für Physik B Condens Matter. 64, 223 (1986)
8. K.P. Ghatak, S.N. Biswas, J. Solid-State Electron. 37, 1437 (1994)
9. K.P. Ghatak, N. Chattopadhyay, M. Mondal, J. Appl. Phys. A 48, 365 (1989)
10. K.P. Ghatak, M. Mondal, Z. fur Physik B 64, 223 (1986)
11. K.P. Ghatak, S.N. Biswas, Sol. State Electron. 37, 1437 (1994)
12. D.R. Choudhury, A.K. Chowdhury, K.P. Ghatak, A.N. Chakravarti, Phys. Stat. Sol. (b) 98,
K141 (1980)
13. A.N. Chakravarti, A.K. Chowdhury, K.P. Ghatak, Phys. Stat. Sol. (a) 63, K97 (1981)
14. M. Mondal, K.P. Ghatak, Acta Phys. Polon. A 67, 983 (1985); M. Mondal, K.P. Ghatak, Phys.
Stat. Sol. (b) 128, K21 (1985)
15. M. Mondal, K.P. Ghatak, Phys. Stat. Sol. (a) 93, 377 (1986)
16. K.P. Ghatak, M. Mondal, Phys. Stat. Sol. (b) 135, 819 (1986)
17. M. Mondal, K.P. Ghatak, Phys. Stat. Sol. (b) 139, 185 (1987)
18. K.P. Ghatak, N. Chattopadhyay, S.N. Biswas, OE/Fibers’ 87, 203 (1987)
19. K.P. Ghatak, N. Chatterjee, M. Mondal, Phys. Stat. Sol. (b) 139, K25 (1987)
20. K.P. Ghatak, M. Mondal, Phys. Stat. Sol. (b) 148, 645 (1988); K.P. Ghatak, A. Ghosal, Phys.
Stat. Sol. (b) 151, K135 (1989); K P. Ghatak, N. Chattopadhyay, M. Mondal, Phys. A 48, 365
(1989)
21. P.K. Das, K.P. Ghatak, J. Nanosci. Nanotechnol. 19, 2909 (2019); K.P. Ghatak, S. Chakrabarti,
B. Chatterjee, Mater. Focus 7, 361 (2018); K.P. Ghatak, S. Chakrabarti, B. Chatterjee, P.K.
Das, P. Dutta, A. Halder, Mater. Focus 7, 390 (2018); B. Chatterjee, N. Debbarma, M. Mitra,
T. Datta, K.P. Ghatak, J. Nanosci. Nanotechnol. 17, 3352 (2017)
22. K.P. Ghatak, D. De, Mater. Focus 6, 114 (2017); P.K. Das, P. Dutta, A. Halder, J. Pal, N.
Debbarma, S. Debbarma, K.P. Ghatak, Mater. Focus 6, 167 (2017); P.K. Das, P. Dutta, A.
Halder, R. Bhattacharjee, K.P. Ghatak, Mater. Focus 6, 133 (2017); R. Bhattacharjee, K.P.
Ghatak, J. Nanosci. Nanotechnol. 17, 640 (2017)