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using (a) Eq. 5 (green), (d) Eq. 6b (red), and (e) Eq. 7b (blue). From Fig. 16, it appears
that the normalized C g decreases with increasing gate voltage in quantized oscillatory
fashion for all cases as consider in this case. The rate of oscillatory decrease changes
from one type of band model to another type. The normalized C g in QWFETs made
of InSb with V g as the independent variable has been premeditated in Fig. 17 by
taking the different values of the energy band parameters as given in [41] using (a)
Eq. 5 (green), (d) Eq. 6b (red), and (e) Eq. 7b (blue).
From Fig. 17, it appears that the normalized C g decreases with increasing gate
voltage in quantized oscillatory fashion for all cases as consider in this case. The rate
of oscillatory decrease changes from one type of band model to another type. The
normalized C g in QWFETs made of Hg 1−x Cd x Te with V g as the independent variable
has been premeditated in Fig. 18 by taking the different values of the energy band
Fig. 17 The normalized C g
in QWFETs made of InSb
with V g as the independent
variable has been
premeditated using (a) Eq. 5
(green), (d) Eq. 6b (red), and
(e) Eq. 7b (blue)
Fig. 18 The normalized C g
in QWFETs made of
Hg 1−x Cd x Te with V g as the
independent variable has
been premeditated using (a)
Eq. 5 (green), (d) Eq. 6b
(red), and (e) Eq. 7b (blue)