On the Quantum Capacitance of Quantum Wire Field-Effect …
95
case enhances in quantized saw-tooth manner with increasing film thickness. The
normalized C g in QWFETs made of Hg 1−x Cd x Te with film thickness as the independent variable has been premeditated in Fig. 4 by taking the different values of the
energy band parameters as given in [41] using (a) Eq. 5 (green), (d) Eq. 6b (red), and
(e) Eq. 7b (blue). From Fig. 4, it appears that the normalized C g in this case enhances
in quantized saw-tooth manner with increasing film thickness. The normalized C g in
QWFETs made of Ga 1−x Al x As with film thickness as the independent variable has
been premeditated in Fig. 5 by taking the different values of the energy band parameters as given in [41] using (a) Eq. 5 (green), (d) Eq. 6b (red), and (e) Eq. 7b (blue).
From Fig. 5, it appears that the normalized C g in this case enhances in quantized
saw-tooth manner with increasing film thickness.
Fig. 4 The normalized C g in
QWFETs made of
Hg 1−x Cd x Te with film
thickness as the independent
variable has been
premeditated using (a) Eq. 5
(green), (d) Eq. 6b (red), and
(e) Eq. 7b (blue)
Fig. 5 The normalized C g in
QWFETs made of
Ga 1−x Al x As with film
thickness as the independent
variable has been
premeditated using (a) Eq. 5
(green), (d) Eq. 6b (red), and
(e) Eq. 7b (blue)
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