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A. H. Seikh et al.
The normalized C g in QWFETs made of In 1−x Ga x As y P 1−y with film thickness as
the independent variable has been premeditated in Fig. 6 by taking the different values of the energy band parameters as given in [41] using (a) Eq. 5 (green), (d) Eq. 6b
(red), and (e) Eq. 7b (blue). From Fig. 6, it appears that the normalized C g enhances
in quantized saw-tooth manner with increasing film thickness. The normalized C g
in QWFETs made of Cd 3 As 2 with 1D electron statistics as the independent variable
has been premeditated in Fig. 7 by taking the different values of the energy band
Fig. 6 The normalized C g in
QWFETs made of
In 1−x Ga x As y P 1−y with film
thickness as the independent
variable has been
premeditated using (a) Eq. 5
(green), (d) Eq. 6b (red), and
(e) Eq. 7b (blue)
Fig. 7 The normalized C g in
QWFETs made of Cd 3 As 2
with 1D electron statistics as
the independent variable has
been premeditated using (a)
Eq. 3 (brown) (b) Eq. 3 with
δ = 0 (orange), (c) Eq. 5
(red), (d) Eq. 6b (green), and
(e) Eq. 7b (blue)