94
A. H. Seikh et al.
Fig. 2 The normalized C g in
QWFETs made of InAs with
film thickness as the
independent variable has
been premeditated using (a)
Eq. 5 (green) (d) Eq. 6b,
(red) and (e) Eq. 7b (blue)
(green), (d) Eq. 6b (red), and (e) Eq. 7b (blue). From Fig. 2, it appears that the normalized C g enhances in quantized distorted saw-tooth manner with increasing film
thickness. The normalized C g in QWFETs made of InSb with film thickness as the
independent variable has been premeditated in Fig. 3 by taking the different values
of the energy band parameters as given in [41] using (a) Eq. 5 (green), (d) Eq. 6b
(red), and (e) Eq. 7b (blue). From Fig. 3, it appears that the normalized C g in this
Fig. 3 The normalized C g in
QWFETs made of InSb with
film thickness as the
independent variable has
been premeditated using (a)
Eq. 5 (green), (d) Eq. 6b
(red), and (e) Eq. 7b (blue)
A. H. Seikh et al.
Fig. 2 The normalized C g in
QWFETs made of InAs with
film thickness as the
independent variable has
been premeditated using (a)
Eq. 5 (green) (d) Eq. 6b,
(red) and (e) Eq. 7b (blue)
(green), (d) Eq. 6b (red), and (e) Eq. 7b (blue). From Fig. 2, it appears that the normalized C g enhances in quantized distorted saw-tooth manner with increasing film
thickness. The normalized C g in QWFETs made of InSb with film thickness as the
independent variable has been premeditated in Fig. 3 by taking the different values
of the energy band parameters as given in [41] using (a) Eq. 5 (green), (d) Eq. 6b
(red), and (e) Eq. 7b (blue). From Fig. 3, it appears that the normalized C g in this
Fig. 3 The normalized C g in
QWFETs made of InSb with
film thickness as the
independent variable has
been premeditated using (a)
Eq. 5 (green), (d) Eq. 6b
(red), and (e) Eq. 7b (blue)