On the Quantum Capacitance of Quantum Wire Field-Effect …
93
2.11 The C g in QWFET of II–V Materials
The 1D electron statistics under the condition of unity Fermi function at low
temperatures can be written following [41] as
n s =
2g v
π
S
B 49
E
F , n x , n y
(32)
Using (1) and (32) the C g can be expressed as
C g =
2g v e
2
π
S(θ 16 )
1 +
2g v e
2
πC ins
S(θ 16 )
−1
where, θ 16 =
∂
∂ E
F
B 49
E
F , n x , n y
.
3 Results and Discussion
The normalized C g in QWFETs made of CdGeAs 2 with film thickness as the independent variable has been premeditated in Fig. 1 by taking the different values of
the energy band parameters as given in [41] using (a) Eq. 3 (orange), (b) Eq. 3 with
δ = 0 (brown), (c) Eq. 5 (green), (d) Eq. 6b (red), and (e) Eq. 7b (blue). From
Fig. 1, it appears that the normalized C g enhances in quantized saw-tooth manner
with increasing film thickness. The normalized C g in QWFETs made of InAs with
film thickness as the independent variable has been premeditated in Fig. 2 by taking
the different values of the energy band parameters as given in [41] using (a) Eq. 5
Fig. 1 The normalized C g in
QWFETs made of CdGeAs 2
with film thickness as the
independent variable has
been premeditated using (a)
Eq. 3 (orange), (b) Eq. 3 with
δ = 0 (brown), (c) Eq. 5
(green), (d) Eq. 6b (red), and
(e) Eq. 7b (blue)