92
A. H. Seikh et al.
n s =
2g v
π
S [B 44 (E
F , n x , n y )]
(26)
Using (1) and (26) the C g can be expressed as
C g =
2g v e
2
π
S(θ 13 )
1 +
2g v e
2
πC ins
S(θ 13 )
−1
(27)
where, θ 13 =
∂
∂ E
F
B 44
E
F , n x , n y
.
β. Model of Wang and Ressler
The 1D electron statistics under the condition of unity Fermi function at low
temperatures can be written following [41] as
n s =
2g v
π
S
B 46
E
F , n x , n y
(28)
Using (1) and (28) the C g can be expressed as
C g =
2g v e
2
π
S(θ 14 )
1 +
2g v e
2
πC ins
S(θ 14 )
−1
(29)
where, θ 14 =
∂
∂ E
F
B 46
E
F , n x , n y
.
2.10 The C g in QWFET of GaSb
The 1D electron statistics under the condition of unity Fermi function at low
temperatures can be written following [41] as
n s =
2g v
π
S
B 48
E
F , n x , n y
(30)
Using (1) and (30) the C g can be expressed as
C g =
2g v e
2
π
S(θ 15 )
1 +
2g v e
2
πC ins
S(θ 15 )
−1
(31)
where, θ 15 =
∂
∂ E
F
B 48
E
F , n x , n y
.