On the Quantum Capacitance of Quantum Wire Field-Effect …
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2.7 The C g in QWFET of PtSb 2 Material
The 1D electron statistics under the condition of unity Fermi function at low
temperatures can be written following [41] as
n s =
2g v
π
S
B 40
E
F , n x , n y
(22)
Using (1) and (22) the C g can be expressed as
C g =
2g v e
2
π
S(θ 11 )
1 +
2g v e
2
πC ins
S(θ 11 )
−1
(23)
where, θ 11 =
∂
∂ E
F
B 40
E
F , n x , n y
.
2.8 The C g in QWFET of Bi 2 Te 3 Material
The 1D electron statistics under the condition of unity Fermi function at low
temperatures can be written following [41] as
n s =
2g v
π
S
B 42
E
F , n x , n y
(24)
Using (1) and (24) the C g can be expressed as
C g =
2g v e
2
π
S(θ 12 )
1 +
2g v e
2
πC ins
S(θ 12 )
−1
(25)
where, θ 12 =
∂
∂ E
F
B 42
E
F , n x , n y
.
2.9 The C g in QWFET of Ge
α. Model of Cardona et al.
The 1D electron statistics under the condition of unity Fermi function at low
temperatures can be written following [41] as