90
A. H. Seikh et al.
C g =
2g v e
2
π
S(θ 8 )
1 +
2g v e
2
πC ins
S(θ 8 )
−1
(17)
where, θ 8 =
∂
∂ E
F
B 32
E
F , n x , n y
.
2.5 The C g in QWFET of Stressed Materials
The 1D electron statistics under the condition of unity Fermi function at low
temperatures can be written following [41] as
n s =
2g v
π
S
B 34
E
F , n x , n y
(18)
Using (1) and (18) the C g can be expressed as
C g =
2g v e
2
π
S(θ 9 )
1 +
2g v e
2
πC ins
S(θ 9 )
−1
(19)
where, θ 9 =
∂
∂ E
F
B 34
E
F , n x , n y
.
2.6 The C g in QWFET of GaP Material
The 1D electron statistics under the condition of unity Fermi function at low
temperatures can be written following [41] as
n s =
2g v
π
S
B 38
E
F , n x , n y
(20)
Using (1) and (20) the C g can be expressed as
C g =
2g v e
2
π
S(θ 10 )
1 +
2g v e
2
πC ins
S(θ 10 )
−1
(21)
where, θ 10 =
∂
∂ E
F
B 38
E
F , n x , n y
.