References
441
59. M.S. Dresselhaus, A. Jorio, R. Saito, Characterizing graphene, graphite, and carbon nanotubes
by Raman spectroscopy. Annu. Rev. Condens. Matter Phys. 1(1), 89–108 (2010)
60. D.J. Late, Temperature dependent phonon shifts in single-layer WS 2 . ACS Appl. Mater. Inter.
6(2), 1158–1163 (2014)
61. M. Staiger, P. Rafailov, K. Gartsman, H. Telg, M. Krause, G. Radovsky, A. Zak, C. Thomsen,
Excitonic resonances in WS 2 nanotubes. Phys. Rev. B 86(16), 165423 (2012)
62. A.K. Gupta, T.J. Russin, H.R. Gutierrez, P.C. Eklund, Probing graphene edges via Raman
scattering. ACS Nano 3(1), 45–52 (2008)
63. A. Favron, E. Gaufrès, F. Fossard, P. Lévesque, A. Phaneuf-L’Heureux, N. Tang, A. Loiseau,
R. Leonelli, S. Francoeur, and R. Martel, Exfoliating pristine black phosphorus down to the
monolayer: photo-oxidation and electronic confinement effects. arXiv:14080345 (2014)
64. X. Wang, A.M. Jones, K.L. Seyler, V. Tran, Y. Jia, H. Zhao, H. Wang, L. Yang, X. Xu, F. Xia,
Highly anisotropic and robust excitons in monolayer black phosphorus. Nat. Nanotechnol.
10(6), 517–521 (2015)
65. J. Jiang, S. Xiu, M. Zheng, T. Jia, H. Liu, Y. Zhang, G. Chen, Indirect–direct bandgap transition
and gap width tuning in bilayer MoS 2 superlattices. Chem. Phys. Lett. 613, 74–79 (2014)
66. H.J. Conley, B. Wang, J.I. Ziegler, R.F. Haglund Jr., S.T. Pantelides, K.I. Bolotin, Bandgap
engineering of strained monolayer and bilayer MoS 2 . Nano Lett. 13(8), 3626–3630 (2013)
67. D. Yoon, Y.-W. Son, H. Cheong, Strain-dependent splitting of the double-resonance Raman
scattering band in graphene. Phys. Rev. Lett. 106(15), 155502 (2011)
68. F. Ding, H. Ji, Y. Chen, A. Herklotz, K. Dorr, Y. Mei, A. Rastelli, O.G. Schmidt, Stretchable
fraphene: a close look at fundamental parameters through biaxial straining. Nano Lett. 10(9),
3453–3458 (2010)
69. P. Johari, V.B. Shenoy, Tuning the electronic properties of semiconducting transition metal
dichalcogenides by applying mechanical strains. ACS Nano 6(6), 5449–5456 (2012)
70. D.J. Late, Temperature dependent phonon shifts in few-layer black phosphorus. ACS Appl.
Mater Inter. 7(10), 5857–5862 (2015)
71. S. Appalakondaiah, G. Vaitheeswaran, S. Lebegue, N.E. Christensen, A. Svane, Effect of van
der Waals interactions on the structural and elastic properties of black phosphorus. Phys. Rev.
B 86(3), 035105 (2012)
72. I. Calizo, A.A. Balandin, W. Bao, F. Miao, C.N. Lau, Temperature dependence of the Raman
spectra of graphene and graphene multilayers. Nano Lett. 7(9), 2645–2649 (2007)
73. H. Li, Q. Zhang, C.C.R. Yap, B.K. Tay, T.H.T. Edwin, A. Olivier, D. Baillargeat, From bulk to
monolayer MoS 2 : evolution of Raman scattering. Adv. Func. Mater. 22(7), 1385–1390 (2012)
74. A. Arora, M. Koperski, K. Nogajewski, J. Marcus, C. Faugeras, M. Potemski, Excitonic
resonances in thin films of WSe 2 : from monolayer to bulk material. Nanoscale 10421–10429
(2015)
75. C.Q. Sun, Y. Sun, Y.G. Ni, X. Zhang, J.S. Pan, X.H. Wang, J. Zhou, L.T. Li, W.T. Zheng,
S.S. Yu, L.K. Pan, Z. Sun, Coulomb Repulsion at the nanometer-sized contact: a force driving superhydrophobicity, superfluidity, superlubricity, and supersolidity. J. Phys. Chem. C
113(46), 20009–20019 (2009)
76. P.G. Klemens, Anharmonic decay of optical phonons. Phys. Rev. 148(2), 845–848 (1966)
77. T.R. Hart, R.L. Aggarwal, B. Lax, Temperature dependence of Raman scattering in silicon.
Phys. Rev. B 1(2), 638–642 (1970)
78. M. Balkanski, R.F. Wallis, E. Haro, Anharmonic effects in light-scattering due to optical
phonons in silicon. Phys. Rev. B 28(4), 1928–1934 (1983)
79. J. Liu, Y.K. Vohra, Raman modes of 6H polytype of silicon carbide to ultrahigh pressures: a
comparison with silicon and diamond. Phys. Rev. Lett. 72(26), 4105–4108 (1994)
80. R. Cuscó, E. Alarcón Lladó, J. Ibáñez, L. Artús, J. Jiménez, B. Wang, M.J. Callahan, Temperature dependence of Raman scattering in ZnO. Phys. Rev. B, 75(16), 165202–165213
(2007)
81. G. Viera, S. Huet, L. Boufendi, Crystal size and temperature measurements in nanostructured
silicon using Raman spectroscopy. J. Appl. Phys. 90(8), 4175–4183 (2001)
441
59. M.S. Dresselhaus, A. Jorio, R. Saito, Characterizing graphene, graphite, and carbon nanotubes
by Raman spectroscopy. Annu. Rev. Condens. Matter Phys. 1(1), 89–108 (2010)
60. D.J. Late, Temperature dependent phonon shifts in single-layer WS 2 . ACS Appl. Mater. Inter.
6(2), 1158–1163 (2014)
61. M. Staiger, P. Rafailov, K. Gartsman, H. Telg, M. Krause, G. Radovsky, A. Zak, C. Thomsen,
Excitonic resonances in WS 2 nanotubes. Phys. Rev. B 86(16), 165423 (2012)
62. A.K. Gupta, T.J. Russin, H.R. Gutierrez, P.C. Eklund, Probing graphene edges via Raman
scattering. ACS Nano 3(1), 45–52 (2008)
63. A. Favron, E. Gaufrès, F. Fossard, P. Lévesque, A. Phaneuf-L’Heureux, N. Tang, A. Loiseau,
R. Leonelli, S. Francoeur, and R. Martel, Exfoliating pristine black phosphorus down to the
monolayer: photo-oxidation and electronic confinement effects. arXiv:14080345 (2014)
64. X. Wang, A.M. Jones, K.L. Seyler, V. Tran, Y. Jia, H. Zhao, H. Wang, L. Yang, X. Xu, F. Xia,
Highly anisotropic and robust excitons in monolayer black phosphorus. Nat. Nanotechnol.
10(6), 517–521 (2015)
65. J. Jiang, S. Xiu, M. Zheng, T. Jia, H. Liu, Y. Zhang, G. Chen, Indirect–direct bandgap transition
and gap width tuning in bilayer MoS 2 superlattices. Chem. Phys. Lett. 613, 74–79 (2014)
66. H.J. Conley, B. Wang, J.I. Ziegler, R.F. Haglund Jr., S.T. Pantelides, K.I. Bolotin, Bandgap
engineering of strained monolayer and bilayer MoS 2 . Nano Lett. 13(8), 3626–3630 (2013)
67. D. Yoon, Y.-W. Son, H. Cheong, Strain-dependent splitting of the double-resonance Raman
scattering band in graphene. Phys. Rev. Lett. 106(15), 155502 (2011)
68. F. Ding, H. Ji, Y. Chen, A. Herklotz, K. Dorr, Y. Mei, A. Rastelli, O.G. Schmidt, Stretchable
fraphene: a close look at fundamental parameters through biaxial straining. Nano Lett. 10(9),
3453–3458 (2010)
69. P. Johari, V.B. Shenoy, Tuning the electronic properties of semiconducting transition metal
dichalcogenides by applying mechanical strains. ACS Nano 6(6), 5449–5456 (2012)
70. D.J. Late, Temperature dependent phonon shifts in few-layer black phosphorus. ACS Appl.
Mater Inter. 7(10), 5857–5862 (2015)
71. S. Appalakondaiah, G. Vaitheeswaran, S. Lebegue, N.E. Christensen, A. Svane, Effect of van
der Waals interactions on the structural and elastic properties of black phosphorus. Phys. Rev.
B 86(3), 035105 (2012)
72. I. Calizo, A.A. Balandin, W. Bao, F. Miao, C.N. Lau, Temperature dependence of the Raman
spectra of graphene and graphene multilayers. Nano Lett. 7(9), 2645–2649 (2007)
73. H. Li, Q. Zhang, C.C.R. Yap, B.K. Tay, T.H.T. Edwin, A. Olivier, D. Baillargeat, From bulk to
monolayer MoS 2 : evolution of Raman scattering. Adv. Func. Mater. 22(7), 1385–1390 (2012)
74. A. Arora, M. Koperski, K. Nogajewski, J. Marcus, C. Faugeras, M. Potemski, Excitonic
resonances in thin films of WSe 2 : from monolayer to bulk material. Nanoscale 10421–10429
(2015)
75. C.Q. Sun, Y. Sun, Y.G. Ni, X. Zhang, J.S. Pan, X.H. Wang, J. Zhou, L.T. Li, W.T. Zheng,
S.S. Yu, L.K. Pan, Z. Sun, Coulomb Repulsion at the nanometer-sized contact: a force driving superhydrophobicity, superfluidity, superlubricity, and supersolidity. J. Phys. Chem. C
113(46), 20009–20019 (2009)
76. P.G. Klemens, Anharmonic decay of optical phonons. Phys. Rev. 148(2), 845–848 (1966)
77. T.R. Hart, R.L. Aggarwal, B. Lax, Temperature dependence of Raman scattering in silicon.
Phys. Rev. B 1(2), 638–642 (1970)
78. M. Balkanski, R.F. Wallis, E. Haro, Anharmonic effects in light-scattering due to optical
phonons in silicon. Phys. Rev. B 28(4), 1928–1934 (1983)
79. J. Liu, Y.K. Vohra, Raman modes of 6H polytype of silicon carbide to ultrahigh pressures: a
comparison with silicon and diamond. Phys. Rev. Lett. 72(26), 4105–4108 (1994)
80. R. Cuscó, E. Alarcón Lladó, J. Ibáñez, L. Artús, J. Jiménez, B. Wang, M.J. Callahan, Temperature dependence of Raman scattering in ZnO. Phys. Rev. B, 75(16), 165202–165213
(2007)
81. G. Viera, S. Huet, L. Boufendi, Crystal size and temperature measurements in nanostructured
silicon using Raman spectroscopy. J. Appl. Phys. 90(8), 4175–4183 (2001)
