8.3 ZPS: Core Band Entrapment and Polarization
171
Table 8.3 Binding energies for an isolated atom E v (0), the bulk E v (B), the interface E v (I), and
the respective shift v (B) and v (I) and the ratios of their relative shift γ for C 1s, Si 2p, Ge
3d in the C/Si, C/Ge, and Si/Ge interfaces (in eV unit) a
Interface
Energy levels
E v (0)
E v (B)
E v (I)
E v (B)
v (I)
γ
C/Si
C 1s [57]
282.57
284.20
282.74
1.63
0.17
0.11
Si 2p [58]
96.74
99.20
100.18
2.46
3.44
1.40
C/Ge
C 1s [57]
282.57
284.20
283.33
1.63
0.76
0.47
Ge 3d [59]
27.58
28.96
29.80
1.38
2.22
1.61
Si/Ge
Si 2p [58]
96.74
99.20
100.29
2.46
3.56
1.45
Ge 3d [58]
27.58
28.96
29.76
1.38
2.18
1.58
a γ > 1 interface quantum entrapment dominance; otherwise, polarization dominance
931
932
933
934
935
Intensity (a.u.)
Binding energy (eV)
Element
Alloy
Residual
Cu-Si
Cu 2p 3/2
(a)
97
98
99
100
101
Binding energy (eV)
Intensity (a.u.)
Element
Alloy
Residual
(b)
Cu-Si
Si 2p
930 931 932 933 934 935 936
Cu 2p 3/2
Intensity (a.u.)
Binding energy (eV)
Element
Alloy
Residual
(c)
Cu-Sn
483
484
485
486
487
488
Intensity (a.u.)
(d)
Cu-Sn
Sn 3d 3/2
Element
Alloy
Residual
Binding energy (eV)
Fig. 8.5 The PZS of a, b Cu/Si and c, d Cu/Sn alloys [24]. Cu 2p and Si 2p show both polarization
dominance in the Cu–Si allows but Si 2p and Ge 3d show entrapment dominance at the interface