186
G. Lutz and R. Klanner
Fig. 5.49 Photo of an assembled macro-pixel detector with two 64 channel ASTEROID readout
chips on top and bottom and four steering chips
Fig. 5.50 X-ray image (right) obtained with the mask shown on the left
minimize the scattering of charged particles. Consequently the pixel size has been
chosen as 25 × 25 μm 2 for ILC and 50 × 75 μm 2 for BELLE-II. A new method
for wafer thinning based on wafer bonding technique has been developed in order
to produce thin (50 μm) self-supporting all silicon modules [46].
5.11 Detectors with Intrinsic Amplification
Contrary to gas detectors, semiconductor detectors usually provide only the primary
ionization as signal charge. This mode of operation is possible because of the
low energy needed for producing an electron-hole pair (3.6 eV in silicon, whereas
the ionization energy for gases is about 30 eV) and the availability of low noise
G. Lutz and R. Klanner
Fig. 5.49 Photo of an assembled macro-pixel detector with two 64 channel ASTEROID readout
chips on top and bottom and four steering chips
Fig. 5.50 X-ray image (right) obtained with the mask shown on the left
minimize the scattering of charged particles. Consequently the pixel size has been
chosen as 25 × 25 μm 2 for ILC and 50 × 75 μm 2 for BELLE-II. A new method
for wafer thinning based on wafer bonding technique has been developed in order
to produce thin (50 μm) self-supporting all silicon modules [46].
5.11 Detectors with Intrinsic Amplification
Contrary to gas detectors, semiconductor detectors usually provide only the primary
ionization as signal charge. This mode of operation is possible because of the
low energy needed for producing an electron-hole pair (3.6 eV in silicon, whereas
the ionization energy for gases is about 30 eV) and the availability of low noise